A metal grid includes: a member which includes a curved principal surface; an anodic oxide film which is formed on the principal surface of the member, and a lattice structure which has an uneven shape periodically formed on the anodic oxide film. A production method for a metal grid includes: a step of forming a valve metal film on a principal surface of a member, a step of forming an anodic oxide film by performing an anodic oxidation treatment on the valve metal film while the principal surface is curved; and a step of forming a lattice structure with a periodic uneven shape on the anodic oxide film by forming an etching mask with a periodic opening on a surface of the anodic oxide film and etching the anodic oxide film through the opening.

A phase contrast X-ray imaging system includes an X-ray source; a plurality of gratings; a detector; a grating movement mechanism; and an image processor that generates a phase contrast image. The image processor generates the phase contrast image by using a pitch of an intensity change and a function which has the pitch as a variable and expresses the intensity change in a pixel value as a grating moves.

The present invention relates to X-ray differential phase-contrast imaging, in particular to a deflection device for X-ray differential phase-contrast imaging. In order to provide differential phase-contrast imaging with improved dose efficiency, a deflection device (28) for X-ray differential phase-contrast imaging is provided, comprising a deflection structure (41) with a first plurality (44) of first areas (46), and a second plurality (48) of second areas (50). The first areas are provided to change the phase and/or amplitude of an X-ray radiation; and wherein the second areas are X-ray transparent. The first and second areas are arranged periodically such that, in the cross section, the deflection structure is provided with a profile arranged such that the second areas are provided in form of groove-like recesses (54) formed between first areas provided as projections (56). The adjacent projections form respective side surfaces (58) partly enclosing the respective recess arranged in between. The side surfaces of each recess have a varying distance (60) across the depth (62) of the recess.

Novel and advantageous systems and methods for performing X-ray imaging by using an X-ray source with source grating functionality incorporated therein are provided. An electron beam can be electromagnetically manipulated such that the X-ray source emits radiation in a pattern that is the same as if the radiation had already passed through a source grating.

An X-ray grating configured for use in an X-ray imaging apparatus is provided. The X-ray grating has a silicone-based base layer. A plurality of silicon-based ridges is on a surface of the silicon-based base layer, wherein the plurality of silicon-based ridges from a plurality of trenches, where a trench of the plurality of trenches is between two silicon-based ridges of the plurality of silicon-based ridges. A plurality of silicon-based bridges extends between adjacent silicon-based ridges, wherein each silicon-based ridge of the plurality of silicon-based ridges is connected to at least one adjacent silicon-based ridge of the plurality of silicon-based ridges by at least one of a silicon-based bridge of the plurality of silicon-based bridges and wherein at least one of a plurality of four adjacent trenches does not have any silicon-based bridges.

A method for producing a microstructure component, a microstructure component and an x-ray device are disclosed. In the method, a plurality of punctiform injection structures are inserted in a grid in a first substrate direction and a second substrate direction, standing at right angles thereto, into a first surface of a wafer-like silicon substrate. The injection structures are lengthened into drilled holes in the depth direction of the silicon substrate in a first etching step. A second surface of the silicon substrate is then at least partly removed for rear-side opening of the drilled holes in a second etching step and in a third etching step, an etching medium acting anisotropically is poured alternately through the drilled holes from both surfaces of the silicon substrate, so that drilled holes arranged next to one another in the first substrate direction connect to form a column running in the first substrate direction.

The invention relates to an analyzing grid for phase contrast imaging and/or dark-field imaging, a detector arrangement for phase contrast imaging and/or dark-field imaging comprising such analyzing grid, an X-ray imaging system comprising such detector arrangement, a method for manufacturing such analyzing grid, a computer program element for controlling such analyzing grid or detector arrangement for performing such method and a computer readable medium having stored such computer program element. The analyzing grid comprises a number of X-ray converting gratings. The X-ray converting gratings are configured to convert incident X-ray radiation into light or charge. The number of X-ray converting gratings comprises at least a first X-ray converting grating and a second X-ray converting grating. Further, the X-ray converting gratings each comprise an array of grating bars, wherein the grating bars within each X-ray converting grating are arranged mutually displaced from each other in a direction perpendicular to the incident X-ray radiation by a specific displacement pitch. Further, the grating bars of the first X-ray converting grating are arranged mutually displaced from the grating bars of the second X-ray converting grating in the direction perpendicular to the incident X-ray radiation by the displacement pitch divided by the number of X-ray converting gratings.

The present invention relates to an apparatus (10) for imaging an object. It is described to position (210) an X-ray detector relative to at least one X-ray source such that at least a part of a region between the at least one X-ray source and the X-ray detector is an examination region for accommodating an object. In a first mode of operation, with the at least one X-ray source a first focal spot is produced (220), such that at least some first X-rays produced at the first focal spot pass through a first grating of an interferometer arrangement, the first grating positioned at a first position, and such that the at least some first X-rays pass through a second grating of the interferometer arrangement, the second grating positioned at a second position. In the first mode of operation, the at least some first X-rays are detected (230) with the X-ray detector at a detector position. In a second mode of operation, with the at least one X-ray source a second focal spot is produced (240), such that at least some second X-rays produced at the second focal spot avoid the first grating at the first position. In the second mode of operation, the at least some second X-rays are detected (250) with the X-ray detector at the detector position.

There is provided a method and system for filling micromechanical structures with x-ray absorbing material. The method includes providing a wetting layer for enabling melted x-ray absorbing material to flow over the surface of an overall structure including the micromechanical structures, melting the x-ray absorbing material, and applying gas pressure to press the melted x-ray absorbing material into the micromechanical structures.

An x-ray source and an x-ray interferometry system utilizing the x-ray source are provided. The x-ray source includes a target that includes a substrate and a plurality of structures. The substrate includes a thermally conductive first material and a first surface. The plurality of structures is on or embedded in at least a portion of the first surface. The structures are separate from one another and are in thermal communication with the substrate. The structures include at least one second material different from the first material, the at least one second material configured to generate x-rays upon irradiation by electrons having energies in an energy range of 0.5 keV to 160 keV. The x-ray source further includes an electron source configured to generate the electrons and to direct the electrons to impinge the target and to irradiate at least some of the structures along a direction that is at a non-zero angle relative to a surface normal of the portion of the first surface. The x-ray source further includes at least one optical element positioned such that at least some of the x-rays are transmitted through the first material and to or through the at least one optical element.