A fluorescence measurement apparatus includes a fluorescence image acquisition unit that acquires a fluorescence image containing an object, an interference image acquisition unit that acquires an interference image containing the object, and an operation unit. The operation unit determines an optical thickness image based on the interference image acquired by the interference image acquisition unit, and determines, in a region of interest set in common in both of the fluorescence image acquired by the fluorescence image acquisition unit and the optical thickness image, a fluorescence expression rate of the object based on an integrated value of a fluorescence intensity in the fluorescence image and an integrated value of an optical thickness in the optical thickness image.

An optical system includes a light source, a target device, an image detector, and an autocollimator that receives a beam of electromagnetic radiation from the light source, directs the beam to the target device, and directs the beam to the image detector. The autocollimator includes a first polarizing beam splitter that directs the beam to the target device and receives the beam reflected off of the target device, a second polarizing beam splitter that receives the beam from the first polarizing beam splitter, directs the beam to a diffraction grating device, returns diffracted electromagnetic radiation from the diffraction grating device to an array of detectors, and directs the diffractive electromagnetic radiation, a camera that measures an interference pattern of diffracted electromagnetic radiation from the second polarizing beam splitter and captures an image, and a lens assembly that focuses electromagnetic radiation from the target device to the diffraction grating device.

Disclosed is an OCT system, in particular a mid-IR OCT system, comprising: an upconversion module configured to frequency upconvert light received or receivable by the upconversion module and which is in a wavelength range between a first wavelength and a higher second wavelength, the difference between the second wavelength and the first wavelength being at least 300 nm or larger, and the wavelength range having a center wavelength at 2.8 μm or larger, the center wavelength being defined by the average value between the first wavelength and the second wavelength.

An apparatus is provided that includes a detector configured to detect, cumulatively during an exposure period, spatially modulated light. The apparatus also includes modulation means for applying multiple different effective spatial modulations to received light, during the exposure period. A different effective spatial modulation is applied to received light in dependence upon a time during the exposure period of the detector and a frequency of the light, to produce spatially modulated light for detection by the detector.

A part defect testing system includes a hammer beam system that provides laser light having a first wavelength. A read-out beam system provides laser light having a second wavelength. A control system is used to direct the generated hammer beam laser light toward a first position on a part to provide an acoustic hammer pulse that induces surface movement of the part. An areal camera is arranged to produce an interferogram derived from reading surface movement of the part using the read-out beam directed to a second position on the part.

Described herein are an apparatus, system, and method for detecting light. An apparatus can include means for modulating an input beam of light wherein the input beam of light is obtained from an optical coherence tomography arrangement; means for dispersing the modulated beam of light; and means for detecting the dispersed beam of light and converting the detected beam of light into an electrical output signal. An apparatus can include a modulator configured to spatially modulate light; a dispersing element configured to disperse modulated light, and a detector configured to detect dispersed light and convert the detected light into electrical output signals. A method can include spatially modulating a beam of light, dispersing the modulated beam of light, detecting the dispersed beam of light, converting the detecting beam of light into electrical output signals, and providing a three-dimensional image of at least a part of an object.

The present invention relates to a wafer carrier thickness measuring device capable of accurately measuring an inner/outer circumferential thickness of a wafer carrier in a non-contact manner. The present invention provides a wafer carrier thickness measuring device including: a first table installed to be capable of rotating and moving vertically and capable of supporting a central portion of a wafer carrier; a second table disposed outside the first table and rotatably installed, and capable of supporting an outer circumferential portion of the wafer carrier; upper and lower sensors for calculating a thickness of the wafer carrier by measuring a distance to upper and lower surfaces of the wafer carrier supported by one of the first and second tables in a non-contact manner; and a sensor driving unit located at one side of the second table and moving the upper and lower sensors to an upper side or a lower side of the wafer carrier supported by one of the first and second tables.

An apparatus comprising: a double path interferometer comprising a sample path for an object and a reference path; a source of linearly polarized light for the double path interferometer, a phase plate positioned in the sample path; means for superposing the sample path and reference path to create a beam of light for detection; means for spatially modulating the beam of light to produce a modulated beam of light; means for dispersing the modulated beam of light to produce a spatially modulated and dispersed beam of light; a first detector, a second detector, and means for splitting the spatially modulated and dispersed beam of light, wherein light of a first linear polarization is directed to the first detector and light of a second linear polarization, orthogonal to the first linear polarization, is directed to the second detector.

An optical component for an attenuated total reflection interferometric imaging device, which includes: a planar waveguide, especially delimited by a front face and a rear face parallel to each other; an injection zone, comprising two input facets, each extending from a side face of the planar waveguide, configured to separate an initial light beam into two sub-beams each deflected in a respective direction when they enter the planar waveguide; and an extraction zone, including two output facets, configured to receive the two sub-beams, and to deflect the same when they exit the planar waveguide, the optical component being configured so that the two sub-beams can interfere with each other after emerging out of the planar waveguide.

A state determination apparatus 100 determines the state of a structure 200. The state determination apparatus 100 includes a measurement unit 10 configured to measure a deflection amount and a surface displacement amount in each of a plurality of target regions that are preset on the structure 200, a feature value calculation unit 20 configured to calculate, for the respective target regions, feature values each indicating a relationship between the deflection amount and the surface displacement amount, using the measured deflection amount and surface displacement amount, a spatial distribution calculation unit 30 configured to calculate a spatial distribution of the feature values using the feature values calculated for each of the target regions, and a degradation state determination unit 40 configured to determine a degradation state of the structure 200 based on the spatial distribution of the feature value.