A measuring instrument includes a light source, a scanning mirror configured to position the light emitted by the light source at coordinates specified by an X-coordinate and a Y-coordinate on a plate-shaped workpiece held on a chuck table, a diffusing film onto which reflected light is projected, the reflected light forming a spectral interference waveform by being reflected from a top surface and an undersurface of the plate-shaped workpiece held on the chuck table, a light detector configured to detect light intensities corresponding to wavelengths of the spectral interference waveform projected onto the diffusing film, a memory configured to store, for each coordinate, the light intensities corresponding to the wavelengths and being detected by the light detector, and a calculating section configured to calculate a thickness at each coordinate by performing a Fourier transform of the light intensities corresponding to the wavelengths and being stored in the memory.

Embodiments of systems and methods for measuring a surface topography of a semiconductor chip are disclosed. In an example, a method for measuring a surface topography of a semiconductor chip is disclosed. A plurality of interference signals and a plurality of spectrum signals are received by at least one processor. Each of the interference signals and spectrum signals corresponds to a respective one of a plurality of positions on a surface of the semiconductor chip. The spectrum signals are classified by the at least one processor into a plurality of categories using a model. Each of the categories corresponds to a region having a same material on the surface of the semiconductor chip. A surface height offset between a surface baseline and at least one of the categories is determined by the at least one processor based, at least in part, on a calibration signal associated with the region corresponding to the at least one of the categories. The surface topography of the semiconductor chip is characterized by the at least one processor based, at least in part, on the surface height offset and the interference signals.

A method for measuring height differences between tops of multiple bumps of an upper surface of a layer, the method may include performing first measurements of the height differences between the bumps and the corresponding areas, by illuminating the bumps and the corresponding areas with first radiation; wherein the first measurements are subjected to first measurement errors; and determining the height differences between the bumps and the corresponding areas based on the first measurements and the first measurements errors.

A method for determining properties of a coating on a transparent film, a method for manufacturing a capacitor film and a device configured to determine properties of a coating on a transparent film are disclosed. In an embodiment a method includes moving the transparent film with the coating on a path which passes between a light source and a sensor, illuminating, by the light source, the coating on the transparent film, detecting, by the sensor, an intensity of transmitted light from the light source and calculating, by a processor, the properties of the coating on the transparent film based on the detected intensity of transmitted light.

The present invention provides a method for the analysis of a tribofilm, said process comprising: a. obtaining an image of the tribofilm using a digital imaging device b. coding each pixel in the image according to the RGB colour of said pixel; c. assigning a tribofilm thickness to each pixel on the basis of the RGB colour of said pixel to produce a tribofilm thickness data point for each pixel; d. excluding all data points for parts of the image where the thickness of the tribofilm is zero or near-zero; and e. analysing the resultant individual tribofilm thickness data points.

A sensing system for measurement of a multilayered blown polymeric film. A feedblock supplies polymeric material streams to an annular blown film die to form a plurality of layers of different polymeric materials. A sensing system is positioned adjacent to a film bubble extruded from the blown film die, wherein the blown film bubble includes annular layers of at least two different polymeric materials. The sensing system emits a signal toward selected circumferential positions around the film bubble and receives a plurality of reflected signals at each circumferential position. Each reflected signal in the plurality of reflected signals is generated at an interface between annular layers that includes a refractive index change detectable by the sensing system. A processor processes the reflected signals from the sensing system, and for each circumferential position determines a layer thickness profile for each polymeric material in the film.

A sensing system for measurement of a multilayered blown polymeric film. A feedblock supplies polymeric material streams to an annular blown film die to form a plurality of layers of different polymeric materials. A sensing system is positioned adjacent to a film bubble extruded from the blown film die, wherein the blown film bubble includes annular layers of at least two different polymeric materials. The sensing system emits a signal toward selected circumferential positions around the film bubble and receives a plurality of reflected signals at each circumferential position. Each reflected signal in the plurality of reflected signals is generated at an interface between annular layers that includes a refractive index change detectable by the sensing system. A processor processes the reflected signals from the sensing system, and for each circumferential position determines a layer thickness profile for each polymeric material in the film.

A substrate inspection system includes an imaging unit provided in a substrate processing apparatus and configured to acquire image data by imaging a surface of a substrate for color information on which a film is formed; a film thickness measurement unit provided in the substrate processing apparatus and configured to measure a film thickness of a substrate for film thickness measurement on which a film is formed under same conditions as on the substrate for color information; and a model creation unit configured to create a film thickness model corresponding to a correlation between information about color change on the surface of the substrate for color information caused by forming the film, which is acquired based on the image data, and the film thickness of the substrate for film thickness measurement, which is measured by the film thickness measurement unit.

The present disclosure relates to a method for calibrating a stationary THz measuring device which measures geometric properties of a profile by means of one or more THz sensors during an extrusion of the profile, comprising at least one or more steps.

The present disclosure relates to a method for calibrating a stationary THz measuring device which measures geometric properties of a profile by means of one or more THz sensors during an extrusion of the profile, comprising at least one or more steps.