G01B11/306

Method and apparatus for measuring the straightness error of slender bodies, with compensation of gravity deformation

An apparatus and a relative method for measuring straightness errors of elongated-shape elements, such as bars, tubes and the like is presented. The measuring apparatus includes a supporting system for a bar, a first detecting system having one or more first sensors to detect the development of the longitudinal axis of the bar, and a central control unit. The measuring apparatus further includes a second detecting system provided with a plurality of second sensors to detect the forces the bar applies to the supporting system and acquiring means to acquire at least one physical parameter of the bar under measuring. The central control unit includes at least one data acquiring and processing module to acquire and process the data detected by said first and second detecting systems and acquired by said acquiring means, in order to determine the possible straightness error of the bar.

Device and method for distributed detection of straightness of working face of scraper conveyor based on optical fiber sensing

Disclosed is a device and method for distributed detection of straightness of a working face of a scraper conveyor based on optical fiber sensing. The device includes a broadband light source, a first optical fiber circulator array, a second optical fiber circulator array, a collimator array, a reflecting film array, a third optical fiber circulator array, and an optical path analyzer. During transmission of light emitted from the broadband light source, the light with different wavelengths is separated via several optical gratings etched on a single-mode optical fiber (SMF), and reaches reflecting films adhered to the working face of the scraper conveyor through first optical fiber circulators, second optical fiber circulators, and collimators. The light with the different wavelengths is then reflected back from the reflecting films, enters the SMF through third optical fiber circulators, and finally enters the optical path analyzer.

Metrics for asymmetric wafer shape characterization

Using data about the geometry of the wafer, the geometry of the wafer is measured along at least three diameters originating at different points along a circumference of the wafer. A characterization of the geometry of the wafer is determined using the three diameters. A probability of wafer clamping failure for the wafer can be determined based on the characterization.

Coating Thickness Measuring Device and Coating Device Including the Same
20250231020 · 2025-07-17 · ·

A coating thickness measuring device is configured to measure a thickness of a coating material applied to a substrate which is fed by a coating roll on which the substrate is rolled. The coating thickness measuring device includes a coating thickness measurement module, wherein the coating thickness measurement module includes a light applying unit configured to apply light to a surface of the coating material applied to a portion of the substrate rolled on the coating roll, a light acquisition unit configured to acquire light reflected from the surface of the coating material, and a processor configured to calculate the thickness of the coating material based on the acquired light. Accordingly, when measuring the thickness of the coating material the thickness measurement accuracy may be improved. A coating device including the same is also provided.

Wafer surface curvature determining system
11287249 · 2022-03-29 · ·

A system for in-situ measurement of a curvature of a surface of a wafer comprises: a multiwavelength light source module, adapted to emit incident light comprising a plurality of wavelengths; an optical setup configured to combine the incident light into a single beam and to guide the single beam towards a surface of a wafer such that the single beam hits the surface at a single measuring spot on the surface; and a curvature determining unit, configured to determine a curvature of the surface of the wafer from reflected light corresponding to the single beam being reflected on the surface at the single measuring spot.

CIRCUMFERENTIAL MAIN GROOVE DETECTION METHOD AND CIRCUMFERENTIAL MAIN GROOVE DETECTION DEVICE
20220099530 · 2022-03-31 · ·

A circumferential main groove detection method for detecting, by a computer, a position of a circumferential main groove of a tire from 3D data of a tread surface of the tire, the method including: a cross-sectional data extracting step of extracting, at a plurality of places in a tire circumferential direction, cross-sectional data of the tread surface along one direction inclined with respect to the tire circumferential direction; an area dividing step of dividing the cross-sectional data respectively into a plurality of areas along one direction; an evaluating step of evaluating relative unevenness in the areas; and a circumferential main groove identifying step of overlaying evaluation results of divided areas at an identical position in the tire circumferential direction and identifying the position of the tire circumferential main groove.

Z-AXIS MEASUREMENT FIXTURE AND METHOD OF DETERMINING THE PLANARITY OF OBJECTS USING THE FIXTURE
20220099594 · 2022-03-31 ·

A Z-axis measurement fixture used for testing whether a chemical reagent test slide exhibits Z-axis variability, which may affect measurements performed by an automated chemical analyzer using such test slides, includes a planar main body that holds three stainless steel balls, each ball having a known and calibrated diameter. Portions of the stainless steel balls extend outwardly from the top wall and the bottom wall of the planar main body. A chemical reagent test slide is placed on the fixture to rest on and be supported at three points by the portions of the stainless steel balls which project outwardly from the top wall of the planar main body. The fixture is placed on the surface of a gauge block of an optical measurement system such that the lower portions of the three stainless steel balls will rest on the gauge block of the optical measurement system.

Ultrasonic inspection of extents of voids or the like in heated material using fluid blowing

The present invention provides a method for inspecting a material to be inspected using ultrasound waves, the method including the following step 201 to step 301, in which step 201 is performed in a condition where: the surface temperature of a material under inspection—atmospheric temperature>2° C., and inspection using ultrasound waves in step 301 satisfies: a refractive attenuation rate≤1.5%. Step 201: blowing a fluid from a blowing port onto the material to be inspected. Step 301: inspecting the material to be inspected using the ultrasound waves after step 201 or at the same time as the step 201.

METHOD AND DEVICE FOR RECOGNISING AND ANALYSING SURFACE DEFECTS IN THREE-DIMENSIONAL OBJECTS HAVING A REFLECTIVE SURFACE, IN PARTICULAR MOTOR VEHICLE BODIES
20210325313 · 2021-10-21 ·

A method and device recognize and analyze surface defects in three-dimensional objects having a reflective surface, in particular motor vehicle bodies. In which method the surface defects are identified by the evaluation of an image, recorded by a camera in the form of a raster image of pixels, of an illumination pattern projected by a first illumination device onto a part of the reflective surface using a two-dimensional raster coordinate system. The surface defects are identified exclusively using two-dimensional image information with the aid of image processing algorithms without the need for “environmental parameters”, and complex geometric calculations can be omitted. The solution is fast and robust and can be carried out using differently configured first illumination devices, which makes it suitable for mobile applications, for example as a hand-held module. It is also made possible for the method to be optimized by a “deep learning” strategy.

WAFER BACKSIDE ENGINEERING FOR WAFER STRESS CONTROL

A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.