An optical structure is provided. The optical structure includes a sensor, a bandpass filter and a plurality of protrusions. The bandpass filter is disposed above the sensor. The protrusions are disposed on the bandpass filter. The bandpass filter allows light with a wavelength of 700 nm to 3,000 nm to pass through. The protrusions have a size distribution that controls the phase of the incident light to be between 0 and 2π.

According to an embodiment, an electronic device may include: a display, an optical sensor disposed in a rear surface of the display and overlapping the display, the optical sensor including a light emitting unit including light emitting circuitry and a light receiving unit including light receiving circuitry, a processor operatively connected with the display and the optical sensor, and a memory operatively connected with the processor, wherein the memory may store instructions which, when executed, cause the processor to: obtain position information of a first area corresponding to the light emitting unit of the optical sensor in the display, and based on the light emitting unit of the optical sensor radiating light, output a visual object in the first area and/or an area adjacent to the first area on the display.

An optical sensor package includes an IC die including a light sensor element, an output node, and bond pads including a bond pad coupled to the output node. A leadframe includes a plurality of leads or lead terminals, wherein at least some of the plurality of leads or lead terminals are coupled to the bond pads including to the bond pad coupled to the output node. A mold compound provides encapsulation for the optical sensor package including for the light sensor element. The mold compound includes a polymer-base material having filler particles including at least one of infrared or terahertz transparent particle composition provided in a sufficient concentration so that the mold compound is optically transparent for providing an optical transparency of at least 50% for a minimum mold thickness of 500 μm in a portion of at least one of an infrared frequency range and a terahertz frequency range.

A meter for measuring UV light having wavelengths, preferably between 205 nm and 237 nm. The meter includes at least one UV sensitive photo diode adapted for detecting the wavelengths of UV light between a lower end and an upper end; a first filter that blocks the UV light having wavelengths below 237 nm down to at least the lower end that the UV sensitive photo diode can detect; a second filter that blocks the UV light having wavelengths above 230 nm up to at least 205 nm; at least one amplifier for amplifying a signal from the UV sensitive photo diode; an analog to digital converter; a microprocessor; a battery in electrical communication with the microprocessor. The microprocessor preferably being in communication with the amplifier and the analog to digital converter. The microprocessor provides a result for the UV light that the UV sensitive photo diode is exposed to.

A photodetector including: a case including a light receiving surface provided on an upper surface and having a first region that transmits visible light and a second region that transmits less visible light than the first region; a printed circuit board provided to face the light receiving surface; and a plurality of electronic components provided on a light receiving surface side of the printed circuit board and including a first light receiving element configured to detect visible light. The first light receiving element is disposed at a first position of the printed circuit board exposed to the visible light transmitted through the first region. The number of mounted electronic components disposed at the first position is smaller than the number of mounted electronic components disposed at a second position of the printed circuit board other than the first position.

An electronic device including an optical component and an enclosure comprising a glass ceramic region is disclosed. The optical properties of the glass ceramic region and the positioning of the glass ceramic region with respect to the optical component can affect the performance of the optical component, the visual appearance of the optical component, or both.

A semiconductor package that is a proximity sensor includes a light transmitting die, a light receiving die, an ambient light sensor, a cap, and a substrate. The light receiving die and the light transmitting die are coupled to the substrate. The cap is coupled to the substrate forming a first chamber around the light transmitting die and a second chamber around the light receiving die. The cap further includes a recess with contact pads. The ambient light sensor is mounted within the recess of the cap and coupled to the contact pads. The cap includes electrical traces that are coupled to the contact pads within the recess coupling the ambient light sensor to the substrate. By utilizing a cap with a recess containing contact pads, a proximity sensor can be formed in a single semiconductor package all while maintaining a compact size and reducing the manufacturing costs of proximity sensors.

A proximity sensor includes a substrate, a light source, a finger electrode, an active layer, and a transparent electrode layer. The substrate has opposite top and bottom surfaces. The light source faces toward the bottom surface of the substrate. The finger electrode is located on the top surface of the substrate, and has finger portions and gaps between every two adjacent finger portions. The active layer covers the finger electrode, and is located in the gaps. The transparent electrode layer is located on the active layer. When the light source emits light, the light through the gaps sequentially passes through the active layer and the transparent electrode layer onto a reflective surface. The light is reflected by the reflective surface to form reflected light, and the reflected light passes through the transparent electrode layer and is received by the active layer.

Structures for a photonics chip, testing methods for a photonics chip, and methods of forming a structure for a photonics chip. A photonics chip includes a first waveguide, a second waveguide, an optical tap coupling the first waveguide to the second waveguide, and a photodetector coupled to the second waveguide. A laser is attached to the photonics chip. The laser is configured to generate laser light directed by the first waveguide to the optical tap.

A photodetection device includes a photodetection element and a package. The photodetection element includes a semiconductor substrate and a light absorption film. The light absorption film is provided on a region of at least a part of a region around a photodetection region on a principal surface of the semiconductor substrate. The light absorption film has a multi-layer structure including a light absorption layer, a resonance layer, and a reflection layer. At a wavelength of detection target light, a light transmittance inside the resonance layer is larger than a light transmittance inside the light absorption layer, and a light reflectance on a surface of the reflection layer is larger than a light reflectance on a surface of the resonance layer.