An apparatus for an optical in-situ gas analysis includes a housing; a measuring lance whose one first end is connected to the housing and whose other second end projects into the gas to be measured; a light transmitter that is arranged in the housing and whose light is conducted into the measuring lance and is reflected by a reflector arranged at the second end onto a light receiver, and the optical path defines an optical measurement path within the measuring lance; a gas-permeable filter that is held in the measuring lance and in whose interior the measurement path is located: and an evaluation device for evaluating received light signals of the light receiver. It is proposed to be able to reduce the consumption of test gas that the measuring lance has coaxially arranged inner and outer pipes and the outer pipe has openings for the gas to be measured.

A calibration system is provided including an aperture layer, a lens layer, an optical filter, a pixel layer and a regulator. The aperture layer defines a calibration aperture. The lens layer includes a calibration lens substantially axially aligned with the calibration aperture. The optical filter is adjacent the lens layer opposite the aperture layer. The pixel layer is adjacent the optical filter opposite the lens layer and includes a calibration pixel substantially axially aligned with the calibration lens. The calibration pixel detects light power of an illumination source that outputs a band of wavelengths of light as a function of a parameter. The regulator modifies the parameter of the illumination source based on a light power detected by the calibration pixel.

A photoelectric detection circuit and a photoelectric detector are provided. The photoelectric detection circuit includes a first sub-circuit and a second sub-circuit. The first sub-circuit includes a first photoelectric sensing element, and the second sub-circuit includes a second photoelectric sensing element, and an electrical characteristic of the first photoelectric sensing element is substantially identical to an electrical characteristic of the second photoelectric sensing element, and the second photoelectric sensing element is shielded to prevent light from being incident on the second photoelectric sensing element.

Provided is a photodetection apparatus which includes a mounting board, and an optical sensor device that includes a first surface on the mounting board side and a second surface on a side opposite to the mounting board, and is mounted on the mounting board. The optical sensor device includes an optical sensor that includes a light receiving surface on the second surface side, a signal processing circuit that is electrically connected to the optical sensor, and a lead frame that is provided on the second surface side with respect to the signal processing circuit, and shields a surface of the signal processing circuit on the second surface side. The mounting board has a conductive pattern that faces the signal processing circuit and shields a surface of the signal processing circuit on the first surface side.

Systems and methods are provided for filtering coherent infrared light from a thermal background for protection of infrared (IR) imaging arrays and detection systems. A Michelson interferometer is used for coherent light filtering. In an implementation, a system includes a fixed mirror, a beam splitter, and a moving mirror which can be controlled translationally, as well as tip/tilt. The Michelson interferometer may be used as an imaging system. For imaging applications, a system may comprise a tunable array of micro-electromechanical systems (MEMS) mirrors. A mid-wave IR interferometer with electronic feedback and MEMS mirror array is provided.

Method for calibrating a photodetector (3), the method including the following steps: measuring an afterpulsing probability and/or timing of the photodetector (3) under different operating conditions defined by values of one or more operating parameters, at least one of which is a single-photon property of an optical signal (2) incident on the photodetector (3) when measuring the afterpulsing probability, and recording the measured afterpulsing probability and/or timing in relation to the values of the one or more operating parameters; and photodetector calibrated using this method.

According to the present invention, a method for manufacturing a rear surface incident type light receiving device including a substrate, a light receiving unit formed on a surface of the substrate and an electrode formed on the light receiving unit and electrically connected to the light receiving unit includes a first step of performing, after formation of a part of the electrode, a characteristic inspection of the rear surface incident type light receiving device by applying a probe to a part of the electrode and a second step of reducing an area of the electrode in a plan view.

A light sensor structure and the manufacturing method thereof are disclosed. The light sensor structure includes a substrate with a first surface and a second surface opposite to each other. A light sensing element including a light sensing area is disposed on the first surface. A reflection layer is disposed on the second surface. The reflection layer covers a portion of the second surface aligning with the light sensing area.

An optical-path calibration module is provided. The optical-path calibration module defines a first light inlet, a second light inlet, and a first light outlet, and a first light-splitting device is disposed in the optical-path calibration module. The first light inlet is configured to receive a calibration beam of a calibration light-source or be closed. The second light inlet is configured to receive a target-light-source beam or the calibration beam from the calibration light-source. The first light outlet is configured to emit a detection beam to a photoelectric sensor. An angle of 45° is defined between the first light-splitting device and each of the first light inlet and the second light inlet.

An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer, a first electrode portion, a second electrode portion, and a ferroelectric layer. Two-dimensional material layer is electrically connected to semiconductor layer. First electrode portion is electrically connected to two-dimensional material layer. Second electrode portion is electrically connected to two-dimensional material layer with semiconductor layer interposed therebetween. Ferroelectric layer is electrically connected to at least any one of first electrode portion, second electrode portion and semiconductor layer. Electromagnetic wave detector is configured such that an electric field generated from ferroelectric layer is shielded with respect to two-dimensional material layer. Alternatively, ferroelectric layer is arranged so as not to be overlapped with two-dimensional material layer in plan view.