Herein disclosed is an optoelectronic measuring device. The optoelectronic measuring device comprises an objective lens, an imaging lens, a camera, and an optical path adjusting module which are disposed at the first light path. The objective lens receives a first testing light, and transforms the first testing light into a second testing light. The imaging lens receives the second testing light, and transforms the second testing light into a third testing light. The camera measures a beam characteristic of the third testing light. The optical path adjusting module, disposed between the imaging lens and the camera, comprises a mirror, the mirror moves relatively to the imaging lens according to a test command, and adjusts the distance between the imaging lens and the camera at the first light path to be a first optical distance or a second optical distance. Wherein the mirror reflects the third testing light vertically.

Herein disclosed is an optoelectronic measuring device. The optoelectronic measuring device comprises an objective lens, an imaging lens, a camera, and an optical path adjusting module which are disposed at the first light path. The objective lens receives a first testing light, and transforms the first testing light into a second testing light. The imaging lens receives the second testing light, and transforms the second testing light into a third testing light. The camera measures a beam characteristic of the third testing light. The optical path adjusting module, disposed between the imaging lens and the camera, comprises a mirror, the mirror moves relatively to the imaging lens according to a test command, and adjusts the distance between the imaging lens and the camera at the first light path to be a first optical distance or a second optical distance. Wherein the mirror reflects the third testing light vertically.

Light detection systems are provided. Aspects of the light detection systems include first and second light receivers in fixed positions relative to each other, a plurality of wavelength separators configured to pass light from the first and second light receivers having a predetermined spectral range, and a plurality of light detection modules. Baseplates having a stage for mounting a light receiver, a plurality of recesses for fixing a plurality of light detection modules in rigid alignment relative to the stage, and a heat dissipation opening positioned within each recess are also provided. In addition, particle analysis systems, methods and kits for practicing the invention are disclosed.

Light detection systems are provided. Aspects of the light detection systems include first and second light receivers in fixed positions relative to each other, a plurality of wavelength separators configured to pass light from the first and second light receivers having a predetermined spectral range, and a plurality of light detection modules. Baseplates having a stage for mounting a light receiver, a plurality of recesses for fixing a plurality of light detection modules in rigid alignment relative to the stage, and a heat dissipation opening positioned within each recess are also provided. In addition, particle analysis systems, methods and kits for practicing the invention are disclosed.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

In one example, an apparatus is provided. The apparatus includes a photodiode, a charge sensing unit, an analog-to-digital converter (ADC), and a controller. The controller is configured to: enable the photodiode to generate charge in response to incident light, accumulate at least a portion of the charge as residual charge until the photodiode becomes saturated by the residual charge, and transfer the remaining portion of the charge to the charge sensing unit as overflow charge if the photodiode becomes saturated by the residual charge. The controller is further configured to: generate, using the ADC, a first digital output based on the residual charge; after generating the first digital output, generate, using the ADC, a second digital output based on the overflow charge; and generate a digital representation of an intensity of the incident light based on at least one of the first digital output or the second digital output.

In one example, an apparatus is provided. The apparatus includes a photodiode, a charge sensing unit, an analog-to-digital converter (ADC), and a controller. The controller is configured to: enable the photodiode to generate charge in response to incident light, accumulate at least a portion of the charge as residual charge until the photodiode becomes saturated by the residual charge, and transfer the remaining portion of the charge to the charge sensing unit as overflow charge if the photodiode becomes saturated by the residual charge. The controller is further configured to: generate, using the ADC, a first digital output based on the residual charge; after generating the first digital output, generate, using the ADC, a second digital output based on the overflow charge; and generate a digital representation of an intensity of the incident light based on at least one of the first digital output or the second digital output.

A photoelectric conversion apparatus includes a waveform shaping circuit, a reference circuit, and a counter. The waveform shaping circuit is configured to generate a first pulse signal based on a signal output from an avalanche diode. The reference circuit is configured to generate a second pulse signal without depending on incident light. The counter is connected to the waveform shaping circuit and the reference circuit to count a number of occurrences of a pulse signal. The pulse signal is based on at least one of the first pulse signal and the second pulse signal, and is input to the counter.

A photoelectric conversion apparatus includes a waveform shaping circuit, a reference circuit, and a counter. The waveform shaping circuit is configured to generate a first pulse signal based on a signal output from an avalanche diode. The reference circuit is configured to generate a second pulse signal without depending on incident light. The counter is connected to the waveform shaping circuit and the reference circuit to count a number of occurrences of a pulse signal. The pulse signal is based on at least one of the first pulse signal and the second pulse signal, and is input to the counter.