According to an aspect, a detection device, includes a flexible substrate, a plurality of light sensors provided in a detection region of the flexible substrate, a terminal that is provided at one end of the flexible substrate and is capable of being coupled to an external device, and a peripheral circuit that is provided on the flexible substrate and located between the detection region and the terminal.

Systems and methods are disclosed for controlling nonequilibrium electron transport process and generating phonons in low dimensional materials. The systems can include a conductive sheet sandwiched between a first insulation layer and a second insulation layer; a first electrode conductively coupled to a first end of the conductive sheet; a second electrode conductively coupled to a second end of the conductive sheet; and a current source conductively coupled to the first electrode and the second electrode and configured to pass a current from the first electrode through the conductive sheet to the second electrode such that current generates a drift velocity of electrons in the conductive sheet that is greater than the speed of sound to generate phonons.

Systems and methods are disclosed for controlling nonequilibrium electron transport process and generating phonons in low dimensional materials. The systems can include a conductive sheet sandwiched between a first insulation layer and a second insulation layer; a first electrode conductively coupled to a first end of the conductive sheet; a second electrode conductively coupled to a second end of the conductive sheet; and a current source conductively coupled to the first electrode and the second electrode and configured to pass a current from the first electrode through the conductive sheet to the second electrode such that current generates a drift velocity of electrons in the conductive sheet that is greater than the speed of sound to generate phonons.

A light sensor includes an integrated circuit chip and a boost DC/DC converter. The integrated circuit chip supports an array of pixels, each pixel including a SPAD. The boost DC/DC converter delivers to the SPADs a bias potential capable of placing the SPADs in Geiger mode. The boost DC/DC converter includes an inductive element, a first switch, a second switch, and a circuit for controlling on/off switching of the first switch. The inductive element and the first and second switches are arranged outside of the integrated circuit chip while the control circuit forms part of the integrated circuit chip.

A light sensor includes an integrated circuit chip and a boost DC/DC converter. The integrated circuit chip supports an array of pixels, each pixel including a SPAD. The boost DC/DC converter delivers to the SPADs a bias potential capable of placing the SPADs in Geiger mode. The boost DC/DC converter includes an inductive element, a first switch, a second switch, and a circuit for controlling on/off switching of the first switch. The inductive element and the first and second switches are arranged outside of the integrated circuit chip while the control circuit forms part of the integrated circuit chip.

Techniques described herein provide memory redundancy. For example, the memory block for each pixel can be partitioned into multiple memory bins, and the number of memory bins can be larger than the number of time bins. Once a faulty memory cell is identified, an address associated with the memory bin that has the faulty memory cell can be skipped by an address generator. As such, the faulty memory cell is not used to store time-of-fight (ToF) information.

Techniques described herein provide memory redundancy. For example, the memory block for each pixel can be partitioned into multiple memory bins, and the number of memory bins can be larger than the number of time bins. Once a faulty memory cell is identified, an address associated with the memory bin that has the faulty memory cell can be skipped by an address generator. As such, the faulty memory cell is not used to store time-of-fight (ToF) information.

A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

An optical sensor includes a light emitter to emit light, a light receiver to receive the light emitted from the light emitter, a first resin body that covers the light emitter and the light receiver to transmit the light emitted from the light emitter to emit the light outside, and a second resin body that seals the light emitter and the light receiver, in which the second resin body is included inside the first resin body, and the second resin body is harder than the first resin body.