An identification apparatus includes: a plurality of light capturing units including light-capturing optical systems configured to capture a plurality of Raman scattered light fluxes from a sample, an optical fiber unit configured to include a plurality of optical fibers configured to respectively guide the captured Raman scattered light fluxes and in which the optical fibers are bundled at emission end portions thereof; a spectral element configured to disperse the guided Raman scattered light fluxes; an imaging unit configured to receive the dispersed Raman scattered light fluxes; and a data processor configured to acquire spectral data of the Raman scattered light fluxes from the imaging unit and configured to perform an identification process. The Raman scattered light fluxes dispersed by the spectral element are projected so that a spectral image formed on a light-receiving surface of the imaging unit extends along a main scanning direction of the imaging unit.

A surgical access assembly comprises a trocar and a surgical instrument. The trocar comprises a housing and an access tube extending distally from the housing. The housing comprises a hollow light emitter. The housing and the access tube define a lumen extending through the housing and the access tube. The hollow light emitter is configured to project light in the lumen. The surgical instrument comprises an end effector and a shaft extending proximally from the end effector. The shaft comprises an optical receiver positioned within reach of the light from the hollow light emitter. The shaft further comprises a light guide extending from the optical receiver along at least a portion of the shaft toward the end effector.

A spectral analysis device is provided herein. The spectral analysis device includes a first lens, a transmission grating, a lens set and a sensing element. The first lens is configured to receive and converge an incident light beam into a first light beam. The transmission grating is configured to disperse the first light beam into a plurality of second light beams. The lens set is configured to receive the plurality of second light beams. The sensing element includes a substrate and a plurality of pixels. The plurality of pixels is configured to respectively receive the plurality of second light beam. Such structure is used to analyze the spectrum of incident light.

An ultra-weak light multispectral imaging method and an ultra-weak light multispectral imaging system, which can realize multispectral two-dimensional imaging of an ultra-weak light object by constituting a linear array from single-photon detectors of all response wavelengths and combining it with light-splitting technology. The ultra-weak light multispectral two-dimensional imaging system realizes high-resolution optical modulation by adopting the compressive sensing (CS) theory and the digital light processing (DLP) technology and using a linear array single-photon detector as a detection element; the ultra-weak light multispectral two-dimensional imaging system comprises a light filter, a first lens (1), a DMD control system, a second lens, a spectrophotometer, a linear array single-photon detector consisting of a plurality of single-photon detectors with different response wavelengths, and a central processing unit; and the sensitivity of the system can reach the single-photon level. The invention can be widely applied in the fields of biological self-illumination, medical diagnosis, nondestructive material analysis, astronomical observation, national defense and military, spectral measurement, quantum electronics and the like.

An example system can include a support and two or more sensor elements mounted to the support. Each sensor element can be electrically connected to a common electrical node and may include: a respective quench resistor connected to a respective internal node; and a respective photodiode (PD) connected to the respective internal node; a differentiating element fed by at least one of the photodiodes; a first readout electrode fed by the common electrical node; and a second readout electrode fed by the differentiating element. The common electrical node may be connected to at least one of the quench resistors or at least one of the photodiodes.

An image collection chip, an object imaging recognition device and an object imaging recognition method are provided. In each set of the pixel confirmation modules of the chip, each modulation unit and each sensing unit are correspondingly provided up and down on the optical modulation layer and the image sensing layer respectively; each modulation unit is provided with at least one modulation subunit, and each of the modulation subunits is provided with several modulation holes penetrating into the optical modulation layer; and the respective modulation holes in a same modulation subunit are arranged into a two-dimensional graphic structure having a specific pattern.

Raman spectroscopy data is collected using a Spatial Heterodyne Spectrometer and processed in order to reduce signal noise. The processing of the Raman spectroscopy data includes segmenting generating an interferogram from the Raman spectroscopy data, segmenting the interferogram, determining an estimate of power spectrum density, and averaging the estimates of power spectrum density for each segment to provide an output spectrum. The output spectrum has greatly reduced variance of the individual power measurements, and allows the length of segments to be optimized to balance noise reduction operations and the loss of frequency resolution.

A method for correcting frequency offset in a dual comb spectroscopy system is provided. The method includes causing a first laser (L1) generator to transmit L1 pulses at a repetition rate of a first frequency and causing a second laser (L2) generator to transmit L2 pulses at a repetition rate of a second frequency. The method also includes interrogating a reference material using a combination of the L1 pulses and the L2 pulses and capturing reference cell pulses. The method further includes interrogating a material of interest using the L1 pulses and capturing material of interest pulses. The method includes determining a frequency jitter based on the captured reference cell pulses and the combination of the captured material of interest pulses and the L2 pulses.

In a spectroscopic module 1, a flange 7 is formed integrally with a diffraction layer 6 along a periphery thereof so as to become thicker than the diffraction layer 6. As a consequence, at the time of releasing a master mold used for forming the diffraction layer 6 and flange 7, the diffraction layer 6 formed along a convex curved surface 3a of a main unit 3 can be prevented from peeling off from the curved surface 3a together with the master mold. A diffraction grating pattern 9 is formed so as to be eccentric with respect to the center of the diffraction layer 6 toward a predetermined side. Therefore, releasing the mold earlier from the opposite side of the diffraction layer 6 than the predetermined side thereof can prevent the diffraction layer 6 from peeling off and the diffraction grating pattern 9 from being damaged.

The present invention relates to a colour sensor having at least one photosensitive element, in front of which a layer stack of dielectric layers and structured metal layers is constructed, and at least one colour filter, through which optical radiation incident on a light input side of the colour sensor is filtered before it reaches a photosensitive surface of the photosensitive element. In the suggested colour sensor, an array of angle-selective passageways is provided for the optical radiation between the light input side and the photosensitive surface, and each passageway only allows parts of the optical radiation incident on the light input side of the colour sensor within a limited angle of incidence range relative to an axis extending perpendicularly to the colour filter to pass through to the photosensitive surface. When the colour sensor is manufactured with semiconductor technology, it enables the angle-selective structures to be integrated in the CMOS layer stack. In this way, ultra-flat colour sensors can be made.