Spectroferometers and methods of use are provided. The spectroferometers includes an enclosure, one or more interferometer beam-splitting elements, and one or more spectrometer beam-dispersing elements. The one or more interferometer beam-splitting elements and the one or more spectrometer beam-dispersing elements are housed in the enclosure, share one or more radiation sensitive elements, which are arranged to generate a signal in response to incident electromagnetic radiation, and each generate one or more optical outputs. The one or more optical outputs are arranged such that respective optical axes intersect substantially in a plane of the one or more radiation sensitive elements.

A filter and a miniature spectrum measuring device are provided. The filter includes a plurality of film structures. Each of the film structures includes an H-type structural film, an L-type structural film, and a cavity film disposed between the H-type structural film and the L-type structural film.

A filter and a miniature spectrum measuring device are provided. The filter includes a plurality of film structures. Each of the film structures includes an H-type structural film, an L-type structural film, and a cavity film disposed between the H-type structural film and the L-type structural film.

A spectrum measurement device of the present invention includes a spectroscope configured to output a first measurement result that is a result of measuring characteristics of light from an object to be measured, an optical monitor configured to output a second measurement result that is a result of measuring intensity of light from the object to be measured, and a control circuit configured to correct the first measurement result, based on the second measurement result and output a third measurement result, based on the corrected first measurement result.

A light detection device includes: a first support part disposed on a mounting surface of the wiring board; a Fabry-Perot interference filter disposed in a first support region of the first support part; and a temperature detector, wherein the temperature detector is disposed on the mounting surface such that at least a part of the temperature detector overlaps a part of the Fabry-Perot interference filter when seen in a first direction perpendicular to the mounting surface and such that at least a part of the temperature detector overlaps a part of the first support part when seen in a second direction in which the first support part and the light detector are aligned with each other, and wherein a first distance between the temperature detector and the first support part in the second direction is smaller than a first width of the first support region in the second direction.

A light detection device includes: a first support part disposed on a mounting surface of the wiring board; a Fabry-Perot interference filter disposed in a first support region of the first support part; and a temperature detector, wherein the temperature detector is disposed on the mounting surface such that at least a part of the temperature detector overlaps a part of the Fabry-Perot interference filter when seen in a first direction perpendicular to the mounting surface and such that at least a part of the temperature detector overlaps a part of the first support part when seen in a second direction in which the first support part and the light detector are aligned with each other, and wherein a first distance between the temperature detector and the first support part in the second direction is smaller than a first width of the first support region in the second direction.

A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.

A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.

Asymmetric interferometry is used with various embodiments of Optical Photothermal Infrared (OPTIR) systems to enhance the signal strength indicating the photothermal effect on a sample.

Asymmetric interferometry is used with various embodiments of Optical Photothermal Infrared (OPTIR) systems to enhance the signal strength indicating the photothermal effect on a sample.