A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

A wafer probe test system includes a chuck to support a wafer, and a probe card having a first side to face the chuck, an opposite second side, and an aperture that extends between the first and second sides. The system also includes a probe head mounted to the first side of the probe card and having probe pins to contact a device under test of the wafer, and an infra-red thermal sensor facing the aperture of the probe card to sense a temperature of the wafer.

A method of monitoring the surface temperatures of wafers in real time by measuring them according to the present invention monitors the surface temperatures of a polishing pad in real time by measuring them, and can thus actively deal with irregular variations in temperature on the surface of the wafer attributable to chemical reaction and friction in the process of cleaning the wafer. A sensor for measuring the surface temperatures of a wafer according to the present invention can be used in an environment in which there is fume generated from a cleaning solution, and is responsible for temperatures at respective points of an infrared camera and allows the correction of temperatures in respective sections.

IR radiation may be used to examine substrates prior to a fabrication operation in order to adjust processing parameters of the fabrication operation, or to determine features of the substrate. A thermographic image may be collected and provided to a transfer function or machine learning model to determine processing parameters or features. The processing parameters may improve the uniformity of the wafer and/or achieve a desired target feature value.

Embodiments of the present disclosure generally relate to apparatus for processing a substrate, and more specifically to reflector plates for rapid thermal processing. In an embodiment, a reflector plate assembly for processing a substrate is provided. The reflector plate assembly includes a reflector plate body, a plurality of sub-reflector plates disposed within the reflector plate body, and a plurality of pyrometers. A pyrometer of the plurality of pyrometers is coupled to an opening formed in a sub-reflector plate. Chambers including a reflector plate assembly are also described herein.

A temperature measurement method includes: a radiation temperature measurement step for detecting a brightness temperature of a semiconductor wafer from obliquely below the semiconductor wafer; an input parameter calculation step for calculating at least two input parameters from the brightness temperature detected in the radiation temperature measurement step, the at least two input parameters including a first input parameter corresponding to an emissivity ratio of the semiconductor wafer and a second input parameter corresponding to a temperature of the semiconductor wafer; an output parameter estimation step for estimating an output parameter from the first input parameter and the second input parameter; and a temperature calculation step for calculating the temperature of the semiconductor wafer from the output parameter estimated in the output parameter estimation step and the brightness temperature detected in the radiation temperature measurement step.

An apparatus for measuring a temperature of an assembly that is internal to a process chamber. The apparatus may include a light pipe positioned between a lamp radiation filtering window and the assembly, the light pipe has a first end with a bevel configured to redirect infrared radiation emitted from the assembly through the light pipe and has a second end distal to the first end, an optical assembly configured to collimate, filter, and focus infrared radiation from the second end of the light pipe, an optical detector configured to receive an output from the optical assembly and generate at least one signal representative of the infrared radiation, a temperature circuit that transforms the at least one signal into a temperature value, and a controller that is configured to receive the temperature value and to make adjustments to other process parameters of process chamber based on the temperature value.

Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.

An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

Embodiments described herein generally relate to an in-situ metrology system that can constantly provide an uninterrupted optical access to a substrate disposed within a process chamber. In one embodiment, a metrology system for a substrate processing chamber is provided. The metrology system includes a sensor view pipe coupling to a quartz dome of a substrate processing chamber, a flange extending radially from an outer surface of the sensor view pipe, and a viewport window disposed on the flange, the viewport window having spectral ranges chosen for an optical sensor that is disposed on or adjacent to the viewport window.