Embodiments of the present disclosure generally relate to apparatus for processing a substrate, and more specifically to reflector plates for rapid thermal processing. In an embodiment, a reflector plate assembly for processing a substrate is provided. The reflector plate assembly includes a reflector plate body, a plurality of sub-reflector plates disposed within the reflector plate body, and a plurality of pyrometers. A pyrometer of the plurality of pyrometers is coupled to an opening formed in a sub-reflector plate. Chambers including a reflector plate assembly are also described herein.

According to an aspect of the present invention, there is provided a deposition apparatus including: a reaction space which is a reaction chamber; a front chamber for deposition; a raw material supply port that is configured to supply a raw material to the reaction space; an opening for measuring a temperature of a wafer mounted on a wafer mounting surface of a mounting stage disposed in the reaction space; and a partition plate that partitions the reaction space and the front chamber for deposition, in which the raw material supply port is positioned on the same plane as the partition plate or on the reaction space side from the partition plate, and the opening is positioned in the front chamber for deposition side from the partition plate.

The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.

Described herein is a sensor in chip scale package form factor. For example, a non-vacuum packaged sensor chip described herein includes a substrate, and a sensing element arranged on the substrate. The sensing element is configured to change resistance with temperature. Additionally, the non-vacuum packaged sensor chip includes an absorbing layer configured to absorb middle infrared (“MIR”) radiation.

An apparatus for measuring a temperature of an assembly that is internal to a process chamber. The apparatus may include a light pipe positioned between a lamp radiation filtering window and the assembly, the light pipe has a first end with a bevel configured to redirect infrared radiation emitted from the assembly through the light pipe and has a second end distal to the first end, an optical assembly configured to collimate, filter, and focus infrared radiation from the second end of the light pipe, an optical detector configured to receive an output from the optical assembly and generate at least one signal representative of the infrared radiation, a temperature circuit that transforms the at least one signal into a temperature value, and a controller that is configured to receive the temperature value and to make adjustments to other process parameters of process chamber based on the temperature value.

A contactless temperature sensor for measuring the temperature of a workpiece is disclosed. The contactless temperature sensor uses a cushion of gas to separate the bottom surface of the workpiece from the top surface of the temperature sensor. The contactless temperature sensor includes a puck having a conduit therethrough. The conduit has a first portion having a first diameter, and a second portion having a second, narrower diameter. A gas tube rests in the first portion of the conduit, disposed proximate the bottom surface of the puck. Since the puck is not affixed to the gas tube, angular compliance may be achieved between the workpiece and the puck. Gas passes through the second portion and to the top surface of the puck. This gas provides a cushion between the top surface of the puck and the underside of the workpiece and conducts heat from the workpiece to the puck.

A wafer probe test system includes a chuck to support a wafer, and a probe card having a first side to face the chuck, an opposite second side, and an aperture that extends between the first and second sides. The system also includes a probe head mounted to the first side of the probe card and having probe pins to contact a device under test of the wafer, and an infra-red thermal sensor facing the aperture of the probe card to sense a temperature of the wafer.

A temperature measurement method comprises a step (A) of lighting a light source part to irradiate a substrate to be treated that is an object to be heated with light for heating, the light source part including a plurality of semiconductor light-emitting elements that emits light having a main emission wavelength range of 0.3 μm or more and less than 0.5 μm; a step (B) of turning off the light source part after the step (A); a step (C) of maintaining an unlit state of the light source part after the step (B); and a step (D) of measuring, during the step (C), a temperature of the substrate to be treated through observation of light emitted from the substrate to be treated using a thermometer having a sensitivity wavelength range different from the main emission wavelength range of light emitted from the light source part.

A reactor system designed to provide accurate monitoring of wafer temperatures during deposition steps. The reactor system includes a pyrometer mounting assembly supporting and positioning three or more pyrometers (e.g., infrared (IR) pyrometers) relative to the reaction chamber to measure a center wafer temperature and an edge wafer temperature as well as reaction chamber temperature. The pyrometer mounting assembly provides a small spot size or temperature sensing area with the edge pyrometer to accurately measure edge wafer temperatures. A jig assembly, and installation method for each tool setup, is provided for use in achieving accurate alignment of the IR pyrometer sensing spot (and the edge pyrometer) relative to the wafer, when the pyrometer mounting assembly is mounted upon a lamp bank in the reactor system or in tool setup. The wafer edge temperature sensing with the reactor system assembled with proper alignment ensures accurate and repeatable measurement of wafer temperatures.

A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.