A solar radiation heat sensor device includes: a black plate having a black surface; a silver plate having a silvery-white surface; a casing that supports the black plate and the silver plate in such a manner as to be exposed to an outside with the black surface and the silvery-white surface facing the same direction; a thermistor which is accommodated in the casing and is configured to measure temperatures of each of the black plate and the silver plate; and a processor configured to calculate a solar radiation heat amount based on a difference between the temperature of the black plate and the temperature of the silver plate, the temperatures being measured by the thermistor.

An infrared image sensor includes a first integrate circuit (IC), a bolometer disposed on or above one surface of the first IC configured to detect infrared rays passing through a lens module, a via electrically connecting the first IC and the bolometer, and a reflective layer disposed between the first IC and the bolometer, wherein the first IC includes at least one of a read-out (RO) element configured to perform analog processing for the bolometer to generate infrared sensing information and an image signal process (ISP) element configured to perform digital processing based on the bolometer to generate infrared image information, and at least one of an autofocusing (AF) control element and an optical image stabilization (OIS) control element configured to adjust a positional relationship between the lens module and the bolometer.

Temperature sensor packages and methods of fabrication are described. The temperature sensor packages in accordance with embodiments may be rigid or flexible. In some embodiments the temperature sensor packages are configured for touch sensing, and include an electrically conductive sensor pattern such as a thermocouple or resistance temperature detector (RTD) pattern. In some embodiments, the temperature sensor packages are configured for non-contact sensing an include an embedded transducer.

A nanoscale bolometer for infrared (IR) thermal imaging comprises a subwavelength antenna that provides a specific detectivity approaching a fundamental, thermodynamic limit. The uncooled nanobolometer achieves performance comparable to cooled, high-performance, semiconductor photodetectors, but with significantly reduced size, weight, power, and cost.

An ultra-small thermal imaging core, or micro-core. The design of the micro-core may include substrates for mounting optics and electronic connectors that are thermally matched to the imaging Focal Plane Array (FPA). Test fixtures for test and adjustment that allow for operation and image acquisition of multiple cores may also be provided. Tooling may be included to position the optics to set the core focus, either by moving the lens and lens holder as one or by pushing and/or pulling the lens against a lens positioning element within the lens holder, while observing a scene. Test procedures and fixtures that allow for full temperature calibration of each individual core, as well as providing data useful for uniformity correction during operation may also be included as part of the test and manufacture of the core.

Temperature sensor packages and methods of fabrication are described. The temperature sensor packages in accordance with embodiments may be rigid or flexible. In some embodiments the temperature sensor packages are configured for touch sensing, and include an electrically conductive sensor pattern such as a thermocouple or resistance temperature detector (RTD) pattern. In some embodiments, the temperature sensor packages are configured for non-contact sensing an include an embedded transducer.

An ultra-small thermal imaging core, or micro-core. The design of the micro-core may include substrates for mounting optics and electronic connectors that are thermally matched to the imaging Focal Plane Array (FPA). Test fixtures for test and adjustment that allow for operation and image acquisition of multiple cores may also be provided. Tooling may be included to position the optics to set the core focus, either by moving the lens and lens holder as one or by pushing and/or pulling the lens against a lens positioning element within the lens holder, while observing a scene. Test procedures and fixtures that allow for full temperature calibration of each individual core, as well as providing data useful for uniformity correction during operation may also be included as part of the test and manufacture of the core.

An electronic device is provided, which includes an enclosure, an output component, a display screen and an optical sensor. The output component and the display screen are mounted on the enclosure. The output component includes a packaging shell, an infrared supplementary lighting lamp and a proximity infrared lamp; the packaging shell includes a packaging substrate; the infrared supplementary lighting lamp and the proximity infrared lamp are packaged in the packaging shell and born on the packaging substrate. The display screen is provided with a non-opaque entity region and includes a front surface capable of displaying a picture and a back surface back on to the front surface. The optical sensor is arranged on a side, where the back surface is positioned, of the display screen and corresponds to the non-opaque entity region.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

A microelectromechanical infrared sensing device is provided, which includes a substrate, a sensing plate, a reflecting plate, a plurality of first supporting elements, a plurality of second supporting elements and a plurality of stoppers. The second supporting elements are connected to the sensing plate, such that the sensing plate is suspended above the substrate. The reflecting plate is disposed between the substrate and the sensing plate. The first supporting elements are connected to the reflecting plate, such that the reflecting plate is suspended between the substrate and the reflecting plate. When the reflecting plate moves toward the substrate and at least one of the stoppers contacts the substrate or the reflecting plate, the distance between the reflecting plate and the sensing plate increases.