Wearable devices capable of measuring a core body temperature and other vital signs of a user in a range of situations are described herein. The wearable device is arranged to be retained within the ear canal of the ear, in order to prevent the wearable device from inadvertently removing itself from the ear. Providing an infrared thermopile at the innermost end of the ear insert ensures that the infrared thermopile is provided as close as possible to the tympanic membrane which will be used to provide an indication of the core body temperature.

Described herein is a temperature device, including systems and methods associated therewith. The temperature device may include a housing. The temperature device may further include an actuation feature associated with the housing and configured to receive a user input. The temperature device may further include a sensing feature recessed within the housing and configured to detect a temperature condition in response to a receipt of the user input. The temperature device may further include a communication module operatively connected to the sensing feature and configured to transmit and receive information associated with a detection of the temperature condition.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

The present invention relates to a freeform surface reflective infrared imaging system comprising a primary mirror, a secondary mirror, a tertiary mirror, and an infrared light detector. Each reflective surface of the primary mirror, the secondary mirror, and the tertiary mirror is an xy polynomial freeform surface. A field of view of the freeform surface reflective infrared imaging system is larger than or equal to 4030. An F-number of the freeform surface reflective infrared imaging system is less than or equal to 1.39.

A decoupling radiant and convective heat sensing device having sensor elements facing in different directions, and a decoupling radiant and convective heat sensing device having sensor elements facing in different directions with a means for determining the remaining time before a Self Contained Breathing Apparatus facemask will become compromised by dangerous heat conditions.

A microbolometer for measuring thermal radiation comprises an electrical circuit on a perforated plastic substrate. The electrical circuit comprises at least one thermistor having a temperature dependent electric resistance, wherein the thermistor is arranged to receive the thermal radiation for changing its temperature depending on a flux of the received thermal radiation. The electrical circuit is configured to measure the electric resistance of the thermistor for calculating the thermal radiation. The microbolometer is configured to cause a gas flow through the perforations for improving thermal characteristics.

A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.

Infrared imaging devices are provided which are configured to implement side-scan infrared imaging for, e.g., medical applications. For example, an imaging device includes a ring-shaped detector element comprising a circular array of infrared detectors configured to detect thermal infrared radiation, and a focusing element configured to focus incident infrared radiation towards the circular array of infrared detectors. The imaging device can be an ingestible imaging device (e.g., swallowable camera) or the imaging device can be implemented as part of an endoscope device, for example.

A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer. The thermal detector further comprises front optics (120) for entrance of radiation from outside into one of the first and second vacuum-sealed cavities, aback reflector (112) arranged to reflect radiation back into the other one of the first and second vacuum-sealed cavities, and electrical connections (114) for connecting the suspended active element to a readout circuit (118).

A device includes a semiconductor chip, and a semiconductor chip package in which the semiconductor chip is packaged. The semiconductor chip has a first major surface opposite a second major surface, and a set of four edges extending between the first major surface and the second major surface. The semiconductor chip package includes at least first and second electrodes exposed to an exterior of the semiconductor chip package and positioned apart from the semiconductor chip. The at least first and second electrodes overlap only one edge of the semiconductor chip. The semiconductor chip package also includes a filler that is molded between the semiconductor chip and each of the at least first and second electrodes.