The present invention relates to a method for controlling a flux distribution (30) of evaporated source material (20) in a system (10) for thermal evaporation with electromagnetic radiation (120), wherein the system (10) comprises an electromagnetic radiation source (110) for providing an electromagnetic radiation (120), a vacuum chamber (12) containing a reaction atmosphere (16) and a detector (40) for measuring electromagnetic radiation (120), wherein a source material (20) and a target material (18) to be coated are arranged in the vacuum chamber (12) and the radiation source is arranged such that its electromagnetic radiation (120) impinges at an angle, preferably at an angle of 45°, on a source surface (22) of the source material (20) for a thermal evaporation and/or sublimation of the source material (20) below the plasma threshold, and wherein the detector (40) for measuring electromagnetic radiation (120) is arranged such that electromagnetic radiation (120) reflected on the source surface (22) reaches the detector (40). Further, the present invention relates to a detector (40) for measuring electromagnetic radiation (120), the detector (40) preferably suitable for a method according to the present invention, and additionally to a system (10) for thermal evaporation with electromagnetic radiation (120) suitable for the method according to the present invention.

The system may include a setup app that is configured to locate, track and/or analyze activities of living beings in an environment. The system may be configured for determining a temperature of an object in a space, based on infrared (IR) energy data of IR energy from the object, determining location coordinates of the object in the space, comparing the location coordinates of the object to location coordinates of a fixture and determining that the object is a human being, in response to the temperature of the object being within a range, and in response to the location coordinates of the object being distinct from the location coordinates of the fixture.

The system may include a setup app that is configured to locate, track and/or analyze activities of living beings in an environment. The system may be configured for determining a temperature of an object in a space, based on infrared (IR) energy data of IR energy from the object, determining location coordinates of the object in the space, comparing the location coordinates of the object to location coordinates of a fixture and determining that the object is a human being, in response to the temperature of the object being within a range, and in response to the location coordinates of the object being distinct from the location coordinates of the fixture.

A microelectromechanical (MEMS) interferometer is provided. The MEMS interferometer includes a pair of movable mirrors that are positioned along perpendicular axes, wherein each of the pair of movable mirrors is coupled to a mechanism. The mechanism includes an electrostatic actuator driving a displacement amplification mechanism, and the displacement amplification mechanism driving each of the pair of the movable mirrors. The MEMS interferometer includes a beam splitter that is positioned at an intersection of the perpendicular axes extending through each movable mirror and the beam splitter. The MEMS interferometer also includes a metasurface microbolometer placed in line with the beam splitter to measure an intensity of a recombined beam from the pair of movable mirrors.

An absorber for absorbing electromagnetic radiation including a first layer with hydrogenated carbon, and a second layer with carbon, and the first layer is less absorbing than the second layer.

An absorber for absorbing electromagnetic radiation including a first layer with hydrogenated carbon, and a second layer with carbon, and the first layer is less absorbing than the second layer.

A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.

There is provided an auto detection system including a thermal detection device and a host. The host controls an indication device to indicate a prompt message or detection results according to a slope variation of voltage values or 2D distribution of temperature values detected by the thermal detection device, wherein the voltage values include the detected voltage of a single pixel or the sum of detected voltages of multiple pixels of a thermal sensor.

An example method includes determining, at an aggregated point in time, an aggregated space node motion amount detected in a plurality of node sensing areas of a plurality of the nodes. The determining the aggregated space node motion amount includes compiling a plurality of sensing records from a subset or all of the nodes created by the subset or all of the nodes at a time substantially close to the aggregated point in time. The method additionally includes computing a temporal aggregated motion amount detected in a node sensing area of a respective node over time, using the aggregated time node motion amount. The method further includes computing a spatial aggregated motion amount in a portion of a space, using the aggregated space node motion amount, wherein the portion of the space correlates to the node sensing areas of the plurality of nodes.

Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.