The purpose of the present invention is to provide a terahertz detector using a field-effect transistor capable of implementing high sensitivity by exhibiting an asymmetric characteristic only with a form of a source/drain and a gate. To this end, the present invention relates to the terahertz detector using a field-effect transistor comprising: a source formed by being doped on a portion of a silicon base; a channel formed so as to encompass the source on a plane; a drain formed outside the channel; a dielectric layer formed on an upper end of the source, the channel and the drain; and a gate located at an upper end of the dielectric layer, wherein when terahertz electromagnetic waves are applied through the gate, the intensity of the electromagnetic waves is detected using a current/voltage outputted from the source and the drain.

The purpose of the present invention is to provide a terahertz detector using a field-effect transistor capable of implementing high sensitivity by exhibiting an asymmetric characteristic only with a form of a source/drain and a gate. To this end, the present invention relates to the terahertz detector using a field-effect transistor comprising: a source formed by being doped on a portion of a silicon base; a channel formed so as to encompass the source on a plane; a drain formed outside the channel; a dielectric layer formed on an upper end of the source, the channel and the drain; and a gate located at an upper end of the dielectric layer, wherein when terahertz electromagnetic waves are applied through the gate, the intensity of the electromagnetic waves is detected using a current/voltage outputted from the source and the drain.

An infrared sensor is formed in such a manner that an infrared receiver and a base substrate are spaced with a beam made of a thin-film phononic crystal in which through holes are arranged periodically. The beam made of a phononic crystal is formed in such a manner that a period P of through holes increases at arbitrary intervals in a direction from the infrared receiver toward the base substrate.

An infrared sensor is formed in such a manner that an infrared receiver and a base substrate are spaced with a beam made of a thin-film phononic crystal in which through holes are arranged periodically. The beam made of a phononic crystal is formed in such a manner that a period P of through holes increases at arbitrary intervals in a direction from the infrared receiver toward the base substrate.

A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.

Disclosed is a system and method for monitoring a characteristic of an environment of an electronic device. The electronic device may include a printed circuit board and a component. A sensor is placed on the printed circuit board, and may be between the component and the board, and connects to a monitor, or detector. An end user device may be used to store, assess, display and understand the data received from the sensor through the monitor.

A thermal radiation detection device (1), said device comprising a sensor array (2) comprising a plurality of sensor elements (3) and an optical waveguide (4) having a radiation input end (5) and a radiation output end (6). The radiation input end (5) is configured to receive thermal5 radiation, and the radiation output end (6) is operatively connected to the sensor array (2). The optical waveguide (4) is configured to transmit the received thermal radiation as a plurality of simultaneous thermal radiation signals. By decoupling the sensor array from the radiation input end, the relatively large sensor array can be placed in a position optimal for electronic functionality and optimal in view of mechanical constraints, independent of the radiation input position.

A thermal radiation detection device (1), said device comprising a sensor array (2) comprising a plurality of sensor elements (3) and an optical waveguide (4) having a radiation input end (5) and a radiation output end (6). The radiation input end (5) is configured to receive thermal5 radiation, and the radiation output end (6) is operatively connected to the sensor array (2). The optical waveguide (4) is configured to transmit the received thermal radiation as a plurality of simultaneous thermal radiation signals. By decoupling the sensor array from the radiation input end, the relatively large sensor array can be placed in a position optimal for electronic functionality and optimal in view of mechanical constraints, independent of the radiation input position.

The present disclosure provides an infrared sensing device having a simple structure and being capable of detecting an infrared ray. A device 300 includes a variable resistance portion 13 whose electrical resistance varies in response to an infrared ray and a detection portion that detects the variation of the electrical resistance of the variable resistance portion. The variable resistance portion satisfies at least one of i) inclusion of a material potentially absorbing an infrared ray by localized surface plasmon resonance, and ii) reception of a carrier from a carrier supply portion 23 including the above material and being in contact with the variable resistance portion, the carrier being an electron and/or a hole, the carrier being generated by irradiation of the carrier supply portion with an infrared ray.

This disclosure concerns methods and apparatus for interferometric spectroscopic measurements of particles with higher signal to noise ratio utilizing an infrared light beam that is split into two beams. At least one beam may be directed through a measurement volume containing a sample including a medium. The two beams may then be recombined and measured by a detector. The phase differential between the two beams may be selected to provide destructive interference when no particle is present in the measurement volume. A sample including medium with a particle is introduced to the measurement volume and the detected change resulting from at least one of resonant mid-infrared absorption, non-resonant mid-infrared absorption, and scattering by the particle may be used to determine a property of the particle. A wide range of properties of particles may be determined, wherein the particles may include living cells.