Patent classifications
G01J5/20
Thermistor element and electromagnetic wave sensor
A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.
Thermistor element and electromagnetic wave sensor
A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.
Continuous full-resolution two-color infrared detector
An apparatus is provided for nanoantenna-enhanced detection of infrared radiation. The apparatus includes one or more detector pixels. A plurality of detector pixels can constitute a focal plane array (FPA). Each detector pixel carries at least a first and a second subpattern of nanoantenna elements, with elements of the second subpattern interpolated between elements of the first subpattern. Each detector pixel also includes separate collection electrodes for collecting photogenerated current from the respective subpatterns.
High-performance microbolometer using VOx, CNT and graphene for longwave infrared (LWIR) applications
A high-performance Microbolometer that incorporates vanadium oxide (VOx) along with carbon nanotubes (CNTs) or graphene. This Microbolometer, which uses a microbridge comprising Si3N4 and VOx, provides low noise and high dynamic range longwave infrared (LWIR) band detection. Addition of CNTs/graphene provides a high level of performance [low 1/f noise, noise equivalent temperature difference (NETD), and thermal time constant] due to the high temperature coefficient of resistance (TCR) of these materials.
High-performance microbolometer using VOx, CNT and graphene for longwave infrared (LWIR) applications
A high-performance Microbolometer that incorporates vanadium oxide (VOx) along with carbon nanotubes (CNTs) or graphene. This Microbolometer, which uses a microbridge comprising Si3N4 and VOx, provides low noise and high dynamic range longwave infrared (LWIR) band detection. Addition of CNTs/graphene provides a high level of performance [low 1/f noise, noise equivalent temperature difference (NETD), and thermal time constant] due to the high temperature coefficient of resistance (TCR) of these materials.
Method of manufacturing an imaging device
A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.
Method of manufacturing an imaging device
A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.
Device for detecting radiation including an encapsulating structure having an improved mechanical strength
A device for detecting electromagnetic radiation is provided, including a substrate; at least one thermal detector placed on the substrate; and an encapsulating structure encapsulating the detector, including a thin encapsulating layer of a material that is transparent to said radiation, extending around and above the detector so as to define with the substrate a cavity in which the detector is located; wherein the thin encapsulating layer comprises a peripheral wall that encircles the detector, and that has a cross section, in a plane parallel to the plane of the substrate, of square or rectangular shape, corners of which are rounded.
Device for detecting radiation including an encapsulating structure having an improved mechanical strength
A device for detecting electromagnetic radiation is provided, including a substrate; at least one thermal detector placed on the substrate; and an encapsulating structure encapsulating the detector, including a thin encapsulating layer of a material that is transparent to said radiation, extending around and above the detector so as to define with the substrate a cavity in which the detector is located; wherein the thin encapsulating layer comprises a peripheral wall that encircles the detector, and that has a cross section, in a plane parallel to the plane of the substrate, of square or rectangular shape, corners of which are rounded.
Radiation detector, array of radiation detectors and method for manufacturing a radiation detector
A radiation detector with a substrate and a membrane, which is suspended above the substrate by a spacer is described, wherein the spacer thermally insulates a radiation sensor, which is formed in the membrane, from the substrate. Further, the spacer includes a first layer, which is electrically conducting and contacts a first pole of the radiation sensor and of the substrate, and a second layer, which is electrically conducting and electrically insulated from the first electrically conductive layer and contacts a second pole of the radiation sensor and of the substrate, wherein the second pole differs in polarity from the first pole.