A radiation detector with a substrate and a membrane, which is suspended above the substrate by a spacer is described, wherein the spacer thermally insulates a radiation sensor, which is formed in the membrane, from the substrate. Further, the spacer includes a first layer, which is electrically conducting and contacts a first pole of the radiation sensor and of the substrate, and a second layer, which is electrically conducting and electrically insulated from the first electrically conductive layer and contacts a second pole of the radiation sensor and of the substrate, wherein the second pole differs in polarity from the first pole.

Systems, methods, and apparatuses for providing on-board electromagnetic radiation sensing using beam splitting in a radiation sensing apparatus. The radiation sensing apparatuses can include a micro-mirror chip including a plurality of light reflecting surfaces. The apparatuses can also include an image sensor including an imaging surface. The apparatuses can also include a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit can include a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip. The apparatuses can also include an enclosure configured to enclose at least the beamsplitter and a light source. With the apparatuses, the light source can be attached to a printed circuit board (PCB). Also, the enclosure can include an inner surface that has an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter.

Systems, methods, and apparatuses for providing on-board electromagnetic radiation sensing using beam splitting in a radiation sensing apparatus. The radiation sensing apparatuses can include a micro-mirror chip including a plurality of light reflecting surfaces. The apparatuses can also include an image sensor including an imaging surface. The apparatuses can also include a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit can include a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip. The apparatuses can also include an enclosure configured to enclose at least the beamsplitter and a light source. With the apparatuses, the light source can be attached to a printed circuit board (PCB). Also, the enclosure can include an inner surface that has an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter.

An infrared detector useful in, e.g., infrared cameras, includes a substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof, for one or more embodiments. A generally planar window is spaced above the array, the window being substantially transparent to infrared light. A mesa is bonded to the window. The mesa has closed marginal side walls disposed between an outer periphery of a lower surface of the window and an outer periphery of the upper surface of the substrate and defines a closed cavity between the window and the array that encloses the array. A solder seal bonds the mesa to the substrate so as to seal the cavity.

An infrared detector useful in, e.g., infrared cameras, includes a substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof, for one or more embodiments. A generally planar window is spaced above the array, the window being substantially transparent to infrared light. A mesa is bonded to the window. The mesa has closed marginal side walls disposed between an outer periphery of a lower surface of the window and an outer periphery of the upper surface of the substrate and defines a closed cavity between the window and the array that encloses the array. A solder seal bonds the mesa to the substrate so as to seal the cavity.

An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer: a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.

An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer: a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.

In a thermal infrared detector having trench structures, at least one sensor element is provided between the trench structures, an etching hole through which the sensor element is hollowed out and thereby thermally insulated is provided in a substrate rear surface or on the periphery of a pixel area, and an opening portion is provided below the pixel area.

An infrared sensor forming an infrared solid-state imaging device includes a sensor element portion disposed in a package. In the sensor element portion, an absorption structure supported on a substrate is provided. The absorption structure has a structure in which a second insulating film, an absorption film, and a first insulating film are stacked on a reflective film. The first insulating film and the second insulating film are formed so as to have a film thickness with which the index of absorption of infrared radiation entering the absorption structure is maximized with consideration given to the energy loss in an optical transmission path to the absorption structure.

A method for processing a raw image characterized by raw measurements S.sub.p(i,j) that are associated with active bolometers B.sub.pix_(i,j) of an imager, which bolometers are arranged in a matrix array, the imager being at an ambient temperature T.sub.amb and furthermore comprising blind bolometers B.sub.b_(k), the method, which is executed by a computer that is provided with a memory, comprising the following steps: a) a step of calculating the electrical resistances R.sub.Tc(i,j) and R.sub.Tc(k), at the temperature T.sub.amb, of the active and blind bolometers, respectively, from their respective electrical resistances R.sub.Tr(i,j) and R.sub.Tr(k) at a reference temperature T.sub.r, said resistances being stored in the memory; b) a step of determining the temperatures T.sub.sc(i,j) actually measured by each of the active bolometers B.sub.pix_(i,j) from the electrical resistances calculated in step a) and from the raw measurements S.sub.p(i,j).