A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.

A first substrate having an array of emitters or detectors may be joined by bump bonding with a second substrate having read-in (RIIC) or read-out (ROIC) circuitry. After the two substrates are joined, the resulting assembly may be singulated to form sub-arrays such as tiles sub-arrays having pixel elements which may be arranged on a routing layer or carrier to form a larger array. Edge features of the tiles may provide for physical alignment, mechanical attachment and chip-to-chip communication. The pixel elements may be thermal emitter elements for IR image projectors, thermal detector elements for microbolometers, LED-based emitters, or quantum photon detectors such as those found in visible, infrared and ultraviolet FPAs (focal plane arrays), and the like.

A first substrate having an array of emitters or detectors may be joined by bump bonding with a second substrate having read-in (RIIC) or read-out (ROIC) circuitry. After the two substrates are joined, the resulting assembly may be singulated to form sub-arrays such as tiles sub-arrays having pixel elements which may be arranged on a routing layer or carrier to form a larger array. Edge features of the tiles may provide for physical alignment, mechanical attachment and chip-to-chip communication. The pixel elements may be thermal emitter elements for IR image projectors, thermal detector elements for microbolometers, LED-based emitters, or quantum photon detectors such as those found in visible, infrared and ultraviolet FPAs (focal plane arrays), and the like.

An electromagnetic wave sensor that limits the influence on bolometer membranes that is caused by heat from a local heat source is provided. Electromagnetic wave sensor has first substrate, second substrate that faces first substrate so as to form inner space between first substrate and second substrate, wherein second substrate transmits infrared rays; a plurality of bolometer membranes that is provided in inner space and that is supported by second substrate; local heat source that is formed in first substrate; first electric connection member that connects first substrate to second substrate; and lead that extends on or in second substrate and that connects first electric connection member to bolometer membrane.

A device for detecting electromagnetic radiation, including a readout circuit, which is located in a substrate, and an electrical connection pad, which is placed on the substrate, including a metal section that is raised above the substrate and electrically connected to the readout circuit. The detection device furthermore includes a protection wall that extends under the raised metal section so as to define therewith at least one portion of a cavity, and what is called a reinforcing layer section that is located in the cavity and on which the raised metal section rests.

Spectroscopy systems suitable for estimating the composition of test samples are disclosed. Embodiments of the present invention include an element that can be embedded within a sample and operatively couple with elements of the system located outside the sample, thereby enabling long-term monitoring of the sample. An embodiment includes radiation-emitting and radiation-detecting devices having periodic structures, such as photonic crystals and/or plasmonic metamaterials, which serve to filter the wavelengths of radiation at which they operate and/or enhance responsivity for those wavelengths. In some embodiments, the detecting devices are housed in a module suitable for long-term implantation within the sample. In some embodiments, the radiation-emitting and detecting devices are located external to the sample and are optically coupled with a mirror implanted within the sample. In some embodiments, an estimate of the composition of the test sample is generated at controller that is in communication with the emitter module.

A variety of nanostructures are provided having a metal nanowire having a plurality of faces extending along a length of the nanowire, and a plurality of semiconductor nanorods forming two or more nanorod arrays, wherein each of the nanorod arrays is attached to a different surface of the nanowire. For example, in some embodiments, the nanostructure is a silver nanowire having a pentagonal cross section and five faces extending along the length of the nanowire, and metal oxide nanorods forming five nanorod arrays extending along each of the five faces of the silver nanowire. The nanostructures can demonstrate high temperature coefficients of resistance, and can be used in a variety of bolometric materials. In some embodiments, bolometric materials are provided including a plurality of the nanostructures deposited onto a surface of a substrate. Methods of making the nanostructures and bolometers are also provided.

The present publication describes a heat-resistant optical layered structure, a manufacturing method for a layered structure, and the use of a layered structure as a detector, emitter, and reflecting surface. The layered structure comprises a reflecting layer, an optical structure on top of the reflecting layer, and preferably shielding layers for shielding the reflecting layer and the optical structure. According to the invention, the optical structure on top of the reflecting layer comprises at least one partially transparent layer, which is optically fitted at a distance to the reflecting layer.

The present publication describes a heat-resistant optical layered structure, a manufacturing method for a layered structure, and the use of a layered structure as a detector, emitter, and reflecting surface. The layered structure comprises a reflecting layer, an optical structure on top of the reflecting layer, and preferably shielding layers for shielding the reflecting layer and the optical structure. According to the invention, the optical structure on top of the reflecting layer comprises at least one partially transparent layer, which is optically fitted at a distance to the reflecting layer.

A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.