Disclosed herein is a sensor system including four interconnected resistors, where two of the resistors are photoconductive detectors, where the photoconductive detectors are illuminated with light at least at two different wavelengths, where two of the resistors does not change their resistance due to the illumination, where an external voltage is applicable to the sensor system, where a differential voltage is measurable, which depends on the resistance changes of the illuminated photoconductive detectors, where the differential voltage gives a mathematical ratio of the four respective resistances.

Provided is a long-wave infrared (LWIR) sensor including a substrate, a magnetic resistance device on the substrate, and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and generate heat.

A temperature measuring device includes a device main body, a signal control module, a movable shutter module, and a first and a second non-contacting temperature sensing module. The movable shutter module includes an electric control driver, a movable shutter structure, and an electric control heater, and the movable shutter structure includes a black substance for generating a predetermined heating temperature from being heated by the electric control heater. The first non-contacting temperature sensing module is configured for measuring an object temperature of an object so as to obtain object temperature information of the object. The second non-contacting temperature sensing module is configured for measuring the predetermined heating temperature generated by the black substance of the movable shutter structure so as to obtain black body temperature information of the black substance. The first non-contacting temperature sensing module can be calibrated according to the black body temperature information.

A temperature measuring device includes a device main body, a signal control module, a movable shutter module, and a first and a second non-contacting temperature sensing module. The movable shutter module includes an electric control driver, a movable shutter structure, and an electric control heater, and the movable shutter structure includes a black substance for generating a predetermined heating temperature from being heated by the electric control heater. The first non-contacting temperature sensing module is configured for measuring an object temperature of an object so as to obtain object temperature information of the object. The second non-contacting temperature sensing module is configured for measuring the predetermined heating temperature generated by the black substance of the movable shutter structure so as to obtain black body temperature information of the black substance. The first non-contacting temperature sensing module can be calibrated according to the black body temperature information.

An infrared sensor uses an infrared lens with infrared filtering and focusing functions. Thus, an infrared filter can be omitted to reduce the costs and volume. In addition, a getter on the inside of a metal cover of the infrared sensor can be activated when the metal cover is soldered to the substrate of the infrared sensor. Therefore, the packaging process of the infrared sensor can be simplified.

A microbolometer may include a sensitive material based on vanadium oxide (VO.sub.x) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 Ω.Math.cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

A microbolometer may include a sensitive material based on vanadium oxide (VO.sub.x) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 Ω.Math.cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

The present invention includes an electromagnetic wave detector, and a pair of arm portions and that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. Each of the arm portions includes a conductor layer which is in a line shape and electrically connected to the temperature detection element, and dielectric layers which are disposed on both sides of the conductor layer. In a short direction of the dielectric layers in a plan view, the conductor layer has a shape protruding outward beyond both end portions of the dielectric layers in the short direction.

The present invention includes an electromagnetic wave detector, and a pair of arm portions and that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. Each of the arm portions includes a conductor layer which is in a line shape and electrically connected to the temperature detection element, and dielectric layers which are disposed on both sides of the conductor layer. In a short direction of the dielectric layers in a plan view, the conductor layer has a shape protruding outward beyond both end portions of the dielectric layers in the short direction.

A structure body includes: an electromagnetic wave detector; and a pair of arm portions that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element and an electromagnetic wave absorber which covers at least a part of the temperature detection element. Each of the arm portions includes a wiring layer which is in a line shape and electrically connected to the temperature detection element, and protective layers, a part of each of which is disposed on corresponding one of both sides of the wiring layer. The protective layers are made of a material having a lower thermal conductivity than the wiring layer. In a short direction of the protective layers in a plan view, the wiring layer is positioned on an inward side of both end portions of the protective layers in the short direction.