An infrared temperature measurement method and device, first magnifying an acquired original infrared image according to a predefined magnification factor to obtain a second original infrared image, dividing each original pixel in the second original infrared image to obtain pixel groups comprising multiple pixels; then setting a pixel at a predefined location in each pixel group as a reference pixel; setting the temperatures of the reference pixels as the temperatures of the original pixels corresponding to the reference pixels; next acquiring temperatures of a plurality of target pixels based on the temperatures of the reference pixels; the target pixel is one pixel in the pixel groups; finally acquiring the temperature of the predefined temperature detection point according to the temperatures of the multiple target pixels; the temperature detection point corresponds to the multiple target pixels.

A near-field probe (and associated method) compatible with near-infrared electromagnetic radiation and high temperature applications above 300? C. (or 500? C. in some applications) includes an optical waveguide and a photonic thermal emitting structure comprising a near-field thermally emissive material coupled to or part of the optical waveguide. The photonic thermal emitting structure is structured and configured to emit near-field energy responsive to at least one environmental parameter of interest, and the near-field probe is structured and configured to enable extraction of the near-field energy to a far-field by coupling the near-field energy into one or more guided modes of the optical waveguide.

The present invention refers to a device (112) for monitoring an emission temperature of at least one radiation emitting element (114), a heating system (110) for heating at the least one radiation emitting element (114) to emit thermal radiation at an emission temperature, a method for monitoring an emission temperature of at least one radiation emitting element (114) and method for heating the at least one radiation emitting element (114) to emit thermal radiation at an emission temperature. Herein, the device (112) for monitoring an emission temperature of at least one radiation emitting element (114) comprisesat least one light source (125), wherein the light source is configured to emit optical radiation at least partially towards the at least one radiation emitting element (114); at least one radiation sensitive element (126), wherein the at least one radiation sensitive element (126) has at least one sensor region (128), wherein the at least one sensor region (128) comprises at least one photosensitive material selected from at least one photoconductive material, wherein the at least one sensor region (128) is designated for generating at least one sensor signal depending on an intensity of the thermal radiation emitted by the at least one radiation emitting element (114) and received by the sensor region (128) within at least one wavelength range, wherein the sensor region (128) is further designated for generating at least one further sensor signal depending on an intensity of the optical radiation emitted by the at least one light source (125) and received by the sensor region (128) within at least one further wavelength range, wherein the at least one radiation sensitive element (126) is arranged in a manner that the thermal radiation travels through at least one transition material (116) prior to being received by the at least one radiation sensitive element (126), wherein at least one of the at least one light source (125) and the at least one radiation sensitive element (126) is arranged in a manner that the optical radiation travels through the at least one transition material (116) and impinges the at least one radiation emitting element (114) prior to being received by the at least one radiation sensitive element (126); andat least one evaluation unit (138), wherein the at least one evaluation unit (138) is configured to determine the emission temperature of the at least one radiation emitting element (114) by using values for

The present invention refers to a device (112) for monitoring an emission temperature of at least one radiation emitting element (114), a heating system (110) for heating at the least one radiation emitting element (114) to emit thermal radiation at an emission temperature, a method for monitoring an emission temperature of at least one radiation emitting element (114) and method for heating the at least one radiation emitting element (114) to emit thermal radiation at an emission temperature. Herein, the device (112) for monitoring an emission temperature of at least one radiation emitting element (114) comprisesat least one light source (125), wherein the light source is configured to emit optical radiation at least partially towards the at least one radiation emitting element (114); at least one radiation sensitive element (126), wherein the at least one radiation sensitive element (126) has at least one sensor region (128), wherein the at least one sensor region (128) comprises at least one photosensitive material selected from at least one photoconductive material, wherein the at least one sensor region (128) is designated for generating at least one sensor signal depending on an intensity of the thermal radiation emitted by the at least one radiation emitting element (114) and received by the sensor region (128) within at least one wavelength range, wherein the sensor region (128) is further designated for generating at least one further sensor signal depending on an intensity of the optical radiation emitted by the at least one light source (125) and received by the sensor region (128) within at least one further wavelength range, wherein the at least one radiation sensitive element (126) is arranged in a manner that the thermal radiation travels through at least one transition material (116) prior to being received by the at least one radiation sensitive element (126), wherein at least one of the at least one light source (125) and the at least one radiation sensitive element (126) is arranged in a manner that the optical radiation travels through the at least one transition material (116) and impinges the at least one radiation emitting element (114) prior to being received by the at least one radiation sensitive element (126); andat least one evaluation unit (138), wherein the at least one evaluation unit (138) is configured to determine the emission temperature of the at least one radiation emitting element (114) by using values for

An infrared temperature measurement method and device, first magnifying an acquired original infrared image according to a predefined magnification factor to obtain a second original infrared image, dividing each original pixel in the second original infrared image to obtain pixel groups comprising multiple pixels; then setting a pixel at a predefined location in each pixel group as a reference pixel; setting the temperatures of the reference pixels as the temperatures of the original pixels corresponding to the reference pixels; next acquiring temperatures of a plurality of target pixels based on the temperatures of the reference pixels; the target pixel is one pixel in the pixel groups; finally acquiring the temperature of the predefined temperature detection point according to the temperatures of the multiple target pixels; the temperature detection point corresponds to the multiple target pixels.

An infrared temperature measurement method and device, first magnifying an acquired original infrared image according to a predefined magnification factor to obtain a second original infrared image, dividing each original pixel in the second original infrared image to obtain pixel groups comprising multiple pixels; then setting a pixel at a predefined location in each pixel group as a reference pixel; setting the temperatures of the reference pixels as the temperatures of the original pixels corresponding to the reference pixels; next acquiring temperatures of a plurality of target pixels based on the temperatures of the reference pixels; the target pixel is one pixel in the pixel groups; finally acquiring the temperature of the predefined temperature detection point according to the temperatures of the multiple target pixels; the temperature detection point corresponds to the multiple target pixels.

A portable device for quantification of thermochromatic coating signatures is provided. The portable device includes a directing component configured to direct light to a target having a thermochromatic coating. Additionally, the portable device includes a conditioning component configured to condition reflected light from the target, the reflected light including thermochromatic coating signatures. The portable device also includes an image detector configured to generate images from the conditioned reflected light, and a processor configured to receive and analyze images from the image detector and identify at least one portion of the target that has exceeded a predefined temperature or predefined temperature variance based on the analyzed images.

A portable device for quantification of thermochromatic coating signatures is provided. The portable device includes a directing component configured to direct light to a target having a thermochromatic coating. Additionally, the portable device includes a conditioning component configured to condition reflected light from the target, the reflected light including thermochromatic coating signatures. The portable device also includes an image detector configured to generate images from the conditioned reflected light, and a processor configured to receive and analyze images from the image detector and identify at least one portion of the target that has exceeded a predefined temperature or predefined temperature variance based on the analyzed images.

Disclosed are systems and methods for improving applications involving the generation and detection of electromagnetic radiation at terahertz (THz) frequencies. Embodiments of the systems and methods include the fabrication and use of plasmonic devices that enhance light-matter interaction at the nanometer scale by extreme focusing with nanostructured metals. This plasmonic enhancement is used to produce high efficiency THz photoconductive switches that combine the benefits of low-temperature grown GaAs while using mature 1.55 m femtosecond lasers operating with photon energy below the GaAs band-gap.

A spectral conversion element for electromagnetic radiation includes Terahertz antennas and infrared antennas which are distributed in pixel zones. The Terahertz antennas and the infrared antennas which are in one same pixel zone are thermally coupled, and those which are in different pixel zones are uncoupled. Such an element enables the capture of images which are formed with Terahertz radiation, by using an infrared image detector.