Patent classifications
G01J5/34
PER-PIXEL DETECTOR BIAS CONTROL
A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (V.sub.T) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.
PER-PIXEL DETECTOR BIAS CONTROL
A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (V.sub.T) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.
Electromagnetic radiation power and irradiance measurement device and methods
The present invention relates to a system for measuring the power of electromagnetic radiation (EMR) using piezoelectric transducers (PZTs) and pyroelectric transducers (PRTs). According to an illustrative embodiment of the present disclosure, a target cell has a mirrored surface that can partially reflect and partially absorb EMR. Each target cell can include or be coupled to PZTs and PRTs. When incident EMR reflects off of targets cells, the reflected portion creates radiation pressure and the non-reflected portions creates heat. The PZTs convert the pressure into a first electric current, and the PRTs convert the heat into a second electric current. Measuring the first and/or second currents allows a user to calculate the original power of an EMR source. By utilizing multiple target cells placed in specially designed arrays, a user can calculate fluctuations of EMR power by time and location across the target cells.
Electromagnetic radiation power and irradiance measurement device and methods
The present invention relates to a system for measuring the power of electromagnetic radiation (EMR) using piezoelectric transducers (PZTs) and pyroelectric transducers (PRTs). According to an illustrative embodiment of the present disclosure, a target cell has a mirrored surface that can partially reflect and partially absorb EMR. Each target cell can include or be coupled to PZTs and PRTs. When incident EMR reflects off of targets cells, the reflected portion creates radiation pressure and the non-reflected portions creates heat. The PZTs convert the pressure into a first electric current, and the PRTs convert the heat into a second electric current. Measuring the first and/or second currents allows a user to calculate the original power of an EMR source. By utilizing multiple target cells placed in specially designed arrays, a user can calculate fluctuations of EMR power by time and location across the target cells.
Temperature calibration with band gap absorption method
A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.
Temperature calibration with band gap absorption method
A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.
LONG-WAVE INFRARED DETECTING ELEMENT, ARRAY STRUCTURE OF LONG-WAVE INFRARED DETECTING ELEMENTS, LONG-WAVE INFRARED TEMPERATURE DETECTING DEVICE, AND THERMAL IMAGING DEVICE
Provided is a long-wave infrared detecting element including a magnetic field generator configured to generate a magnetic field, a substrate provided on the magnetic field generator, a magnetic-electric converter that is spaced apart from the substrate and configured to generate an electrical signal based on the magnetic field generated by the magnetic field generator, and an support unit that is provided on the substrate and supports the magnetic-electric converter in a state in which the magnetic-electric converter is spaced apart from the substrate, the support unit being configured to generate heat by absorbing incident infrared radiation, wherein the electrical signal changes corresponding to temperature changes of the magnetic-electric converter based on the incident infrared radiation directly absorbed in the magnetic-electric converter and temperature changes of the magnetic-electric converter based on the incident infrared radiation absorbed in the support unit.
PASSIVE DETECTORS FOR IMAGING SYSTEMS
Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum.
PASSIVE DETECTORS FOR IMAGING SYSTEMS
Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum.
Phononic-isolated kinetic inductance detector and fabrication method thereof
The present invention relates to a phononic-isolated Kinetic Inductance Detector (KID) and a method of fabrication thereof. The KID is a highly sensitive superconducting cryogenic detector which can be scaled to very large format arrays. The fabrication process of the KID of the present invention integrates a phononic crystal into a KID architecture. The phononic structures are designed to reduce the loss of recombination and athermal phonons, resulting in lower noise and higher sensitivity detectors.