A method is provided. The method comprises: transmitting a periodic chirp to at least two pixels of a MEMS sensor array; determining a resonant frequency of each MEMS resonant sensor receiving the periodic chirp; determining the change in resonant frequency of each MEMS resonant sensor receiving the periodic chirp; determining a power level incident upon each pixel receiving the periodic chirp. In one embodiment, the method further comprises calibrating the MEMS sensor array. In another embodiment, calibrating comprises generating a reference resonant frequency for each MEMS resonant sensor. In a further embodiment, determining the power level comprises determining a difference between the determined resonant frequency and the reference resonant frequency.

Spherical detector array devices are provided, which are implemented using passive detector structures for thermal imaging applications. Passive detector structures are configured with unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in the thermal IR portion of the electromagnetic spectrum.

Spherical detector array devices are provided, which are implemented using passive detector structures for thermal imaging applications. Passive detector structures are configured with unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in the thermal IR portion of the electromagnetic spectrum.

Embodiments of the invention provide a resonant circuit including an active material substrate excitable by photon energy. A busline having a single input and a single output is located on the active material substrate. A RF resonator geometry is located on the active material substrate in electrical communication with the busline. Application of photon energy to the active material substrate changes the resonance of the RF resonator geometry at room temperatures. Alternately, a resonant circuit is provided that include a passive material substrate. An active material thin film is located on the passive material substrate. A busline having a single input and a single output and a RF resonator geometry located on the active material thin film. The RF resonator geometry is in electrical communication with the busline. Application of photon energy to the active material thin film changes the resonance of the RF resonator geometry at room temperatures.

Multi-spectrum imaging systems and methods are provided to imaging in multiple spectrums, e.g., thermal IR (infrared) at 4 ?m and 10 ?m wavelengths, near-IR, and visible light, all on a same optical centerline. For example, an imaging system includes a first imager and a second imager. The first imager includes an array of thermal IR detectors, wherein the first imager is configured to receive incident photonic radiation and generate a thermal IR image, wherein each thermal IR detector comprises a photon absorber member that is configured to absorb thermal IR photonic radiation from the incident photonic radiation, and reflect remaining photonic radiation in the incident photonic radiation along an optical path of the imaging system. The second imager is disposed in said optical path of the imaging system, wherein the second imager is configured to receive the remaining photonic radiation reflected from the first imager and generate a second image.

Multi-spectrum imaging systems and methods are provided to imaging in multiple spectrums, e.g., thermal IR (infrared) at 4 ?m and 10 ?m wavelengths, near-IR, and visible light, all on a same optical centerline. For example, an imaging system includes a first imager and a second imager. The first imager includes an array of thermal IR detectors, wherein the first imager is configured to receive incident photonic radiation and generate a thermal IR image, wherein each thermal IR detector comprises a photon absorber member that is configured to absorb thermal IR photonic radiation from the incident photonic radiation, and reflect remaining photonic radiation in the incident photonic radiation along an optical path of the imaging system. The second imager is disposed in said optical path of the imaging system, wherein the second imager is configured to receive the remaining photonic radiation reflected from the first imager and generate a second image.

An infrared (IR) detector comprises a radio frequency (RF) resonator including a bottom electrode to provide acoustic excitation, a piezoelectric layer connected to the bottom electrode and suspended over a cavity defined within a semiconductor substrate, and a top layer comprising a mid-IR metamaterial and which is connected to the piezoelectric layer of the RF resonator. The top layer and the piezoelectric layer are sized to impedance match with a particular IR wavelength, to minimize reflection and maximize absorption of a particular IR wavelength, and thus make the top layer polarization sensitive to the particular IR wavelength.

The present invention relates to a radiation imaging sensor with at least one detection element, which is implemented on a substrate as a micromechanical resonator and which absorbs the radiation to be detected. The resonator is set into a resonant oscillation with an excitation device and a shift in the resonance frequency of the detection element under exposure to radiation is detected with a detection device. The radiation sensor is characterized by the fact that it comprises a scanning device with a single-axis or multi-axis tiltable scanning element. The facility to tilt the device means that the detection element can be used to detect radiation from different directions. The imaging sensor can be realized in a compact manner and be economically produced.

The present invention relates to a radiation imaging sensor with at least one detection element, which is implemented on a substrate as a micromechanical resonator and which absorbs the radiation to be detected. The resonator is set into a resonant oscillation with an excitation device and a shift in the resonance frequency of the detection element under exposure to radiation is detected with a detection device. The radiation sensor is characterized by the fact that it comprises a scanning device with a single-axis or multi-axis tiltable scanning element. The facility to tilt the device means that the detection element can be used to detect radiation from different directions. The imaging sensor can be realized in a compact manner and be economically produced.

A multispectral optical sensor is disclosed. In one embodiment, the multispectral optical sensor includes a piezoelectric material, a first sensing layer and a second sensing layer spaced apart from each other on the piezoelectric material and configured to change the propagation speed of the acoustic wave propagated through the piezoelectric material by receiving ultraviolet light and visible light, respectively. The multiple optical sensor further includes a first acoustic wave output part and a second acoustic wave output part disposed on the piezoelectric material respectively corresponding to the first and second sensing layers and configured to generate an electrical signal based on the changed acoustic wave. The multiple optical sensor measures the intensity of ultraviolet and visible light using a single sensor by detecting the change in frequency, and measures the frequency change in the acoustic wave using zinc oxide, gallium nitride), or cadmium sulfide nanoparticles.