A vacuum apparatus temperature sensor assembly for measuring the temperature of a vacuum apparatus and a method are disclosed. The vacuum apparatus temperature sensor assembly comprises: a sheet substrate configured to conform to a shape of an item, equipment or apparatus whose temperature is to be determined; and a temperature sensor thermally coupled with the sheet substrate, wherein the sheet substrate is configured to provide a thermal path from the apparatus to the temperature sensor. In this way, the substrate provides a larger area than that of the temperature sensor to couple with the apparatus which enables the average temperature of the apparatus to be more reliably and accurately conveyed to the temperature sensor and make the temperature measurements less reliant on the exact placing of the temperature sensor with respect to the apparatus.

A vacuum apparatus temperature sensor assembly for measuring the temperature of a vacuum apparatus and a method are disclosed. The vacuum apparatus temperature sensor assembly comprises: a sheet substrate configured to conform to a shape of an item, equipment or apparatus whose temperature is to be determined; and a temperature sensor thermally coupled with the sheet substrate, wherein the sheet substrate is configured to provide a thermal path from the apparatus to the temperature sensor. In this way, the substrate provides a larger area than that of the temperature sensor to couple with the apparatus which enables the average temperature of the apparatus to be more reliably and accurately conveyed to the temperature sensor and make the temperature measurements less reliant on the exact placing of the temperature sensor with respect to the apparatus.

There is provided a semiconductor device 100, comprising: at least one semiconductor chip 5, and a structure 2 thermally coupled to the at least one semiconductor chip 5, wherein the structure 2 comprises a surface located within an interior of the semiconductor device, and the surface comprises a groove 12; and a sensor 16 comprising an optical fibre 13 passing through the groove 12, wherein the sensor 16 is configured to sense a temperature of the at least one semiconductor chip 5.

There is provided a semiconductor device 100, comprising: at least one semiconductor chip 5, and a structure 2 thermally coupled to the at least one semiconductor chip 5, wherein the structure 2 comprises a surface located within an interior of the semiconductor device, and the surface comprises a groove 12; and a sensor 16 comprising an optical fibre 13 passing through the groove 12, wherein the sensor 16 is configured to sense a temperature of the at least one semiconductor chip 5.

An arrangement for temperature measurement on a solid body includes an annularly closed elastic band, along the circumference of which at least two temperature sensors are arranged at a distance from one another, preferably in a manner distributed uniformly along the circumference of the annularly closed elastic band. The annularly closed elastic band preferably incudes an electrically non-conductive, thermally conductive and/or heat-resistant material. The arrangement for temperature measurement can further be arranged in a groove which runs around the solid body. The solid body may be, for example, a battery cell.

An electrical device including a surface which may be exposed to heat derived from operation of the electrical device such that the temperature of the surface increases during operation. The surface includes a temperature sensor including first and second electrodes separated by a layer of control material. The material properties and/or configuration of the control material are selected such that the electrical conductivity of the control material increases with increasing temperature so that electrical current is able to pass between the first and second electrodes once the temperature of any part of the control material has reached or exceeded a predetermined temperature. The temperature sensor extends over substantially the whole of the surface. A system including the electrical device and a method of controlling the electrical device is also disclosed.

An electrical device including a surface which may be exposed to heat derived from operation of the electrical device such that the temperature of the surface increases during operation. The surface includes a temperature sensor including first and second electrodes separated by a layer of control material. The material properties and/or configuration of the control material are selected such that the electrical conductivity of the control material increases with increasing temperature so that electrical current is able to pass between the first and second electrodes once the temperature of any part of the control material has reached or exceeded a predetermined temperature. The temperature sensor extends over substantially the whole of the surface. A system including the electrical device and a method of controlling the electrical device is also disclosed.

A device for current determination includes a shunt and a device for temperature measurement including a printed circuit board, an evaluation unit and a temperature sensor. The printed circuit board has a milled groove which runs spirally around the temperature sensor, so that the temperature sensor is arranged on a printed circuit board plateau defined by the milled groove and is displaceable in a direction that is parallel to a normal vector of a plane defined by the printed circuit board. When the temperature sensor is displaced relative to the plane of the printed circuit board, a restoring force is brought about between the printed circuit board and the temperature sensor, wherein the shunt includes a resistance region having a substantially flat surface, wherein the device for current determination is arranged in the resistance region on the surface of the shunt in such a way that the temperature sensor is arranged in thermal connection with the resistance region of the shunt, wherein voltage taps are arranged on both sides of the temperature sensor and electrically contact the surface of the shunt in order to detect a potential difference along the resistance region.

A device for current determination includes a shunt and a device for temperature measurement including a printed circuit board, an evaluation unit and a temperature sensor. The printed circuit board has a milled groove which runs spirally around the temperature sensor, so that the temperature sensor is arranged on a printed circuit board plateau defined by the milled groove and is displaceable in a direction that is parallel to a normal vector of a plane defined by the printed circuit board. When the temperature sensor is displaced relative to the plane of the printed circuit board, a restoring force is brought about between the printed circuit board and the temperature sensor, wherein the shunt includes a resistance region having a substantially flat surface, wherein the device for current determination is arranged in the resistance region on the surface of the shunt in such a way that the temperature sensor is arranged in thermal connection with the resistance region of the shunt, wherein voltage taps are arranged on both sides of the temperature sensor and electrically contact the surface of the shunt in order to detect a potential difference along the resistance region.

Methods and apparatuses for manipulating the temperature of a surface are provided. Devices of the present disclosure may include a thermal adjustment apparatus, such as a controller in electrical communication with one or more thermoelectric materials, placed adjacent to the surface of skin. The device may generate a series of thermal pulses at the surface, for providing an enhanced thermal sensation for a user. The thermal pulses may be characterized by temperature reversibility, where each pulse includes an initial temperature adjustment, followed by a return temperature adjustment, over a short period of time (e.g., less than 120 seconds). The average rate of temperature change upon initiation and upon return may be between about 0.1° C./sec and about 10.0° C./sec. In some cases, the average rate of the initial temperature adjustment is greater in magnitude than the average rate of the return temperature adjustment.