A stress compensated oscillator circuitry comprises a sensor arrangement for providing a sensor output signal S.sub.Sensor, wherein the sensor output signal S.sub.Sensor is based on an instantaneous stress or strain component a in the semiconductor substrate, a processing arrangement for processing the sensor output signal S.sub.Sensor and providing a control signal S.sub.Control depending on the instantaneous stress or strain component σ in the semiconductor substrate, and an oscillator arrangement for providing an oscillator output signal S.sub.osc having an oscillator frequency f.sub.osc based on the control signal S.sub.Control, wherein the control signal S.sub.Control controls the oscillator output signal S.sub.osc, and wherein the control signal S.sub.Control reduces the influence of the instantaneous stress or strain component σ in the semiconductor substrate onto the oscillator output signal S.sub.osc, so that the oscillator circuitry provides a stress compensated oscillator output signal.

A stress compensated oscillator circuitry comprises a sensor arrangement for providing a sensor output signal S.sub.Sensor, wherein the sensor output signal S.sub.Sensor is based on an instantaneous stress or strain component a in the semiconductor substrate, a processing arrangement for processing the sensor output signal S.sub.Sensor and providing a control signal S.sub.Control depending on the instantaneous stress or strain component σ in the semiconductor substrate, and an oscillator arrangement for providing an oscillator output signal S.sub.osc having an oscillator frequency f.sub.osc based on the control signal S.sub.Control, wherein the control signal S.sub.Control controls the oscillator output signal S.sub.osc, and wherein the control signal S.sub.Control reduces the influence of the instantaneous stress or strain component σ in the semiconductor substrate onto the oscillator output signal S.sub.osc, so that the oscillator circuitry provides a stress compensated oscillator output signal.

A parameter determining apparatus for estimating temperature of a switching element of an inverter is disclosed. The parameter determining apparatus of the present disclosure includes an inverter unit including a power semiconductor module configured with at least one or more switching elements, and a control unit configured to determine an initial collector-emitter voltage of each of the switching elements and collector-emitter resistance of each thereof by linearizing a collector-emitter voltage of each of the switching elements at a certain temperature.

A parameter determining apparatus for estimating temperature of a switching element of an inverter is disclosed. The parameter determining apparatus of the present disclosure includes an inverter unit including a power semiconductor module configured with at least one or more switching elements, and a control unit configured to determine an initial collector-emitter voltage of each of the switching elements and collector-emitter resistance of each thereof by linearizing a collector-emitter voltage of each of the switching elements at a certain temperature.

In one form, the present disclosure is directed toward a method for controlling temperature of a heater including a resistive heating element. The method includes applying power to the resistive heating element of the heater at a variable ramp rate to increase temperature of the heater to a desired temperature setpoint. The variable ramp rate is set to a desired ramp rate. The method further includes monitoring an electric current flowing through the resistive heating element of the heater, and reducing the variable ramp rate from the desired ramp rate to a permitted ramp rate in response to the electric current being greater than a lower limit of an electric current limit band. An upper limit of the electric current limit band is provided as a system current limit.

In one form, the present disclosure is directed toward a method for controlling temperature of a heater including a resistive heating element. The method includes applying power to the resistive heating element of the heater at a variable ramp rate to increase temperature of the heater to a desired temperature setpoint. The variable ramp rate is set to a desired ramp rate. The method further includes monitoring an electric current flowing through the resistive heating element of the heater, and reducing the variable ramp rate from the desired ramp rate to a permitted ramp rate in response to the electric current being greater than a lower limit of an electric current limit band. An upper limit of the electric current limit band is provided as a system current limit.

An electronic device according to various exemplary embodiments of the present disclosure includes: a motion sensor; a temperature sensor configured to acquire temperature information on an external object; an image sensor configured to acquire an image on the external object; and a processor, and the processor is configured to: identify a motion of the electronic device and a motion of the external object using the motion sensor or the image; when the motion falls within a specified range, acquire the temperature information in a first method; when the motion falls within another specified range, acquire the temperature information in a second method; and provide an indicator corresponding to the temperature information through a display functionally connected with the electronic device.

An electronic device according to various exemplary embodiments of the present disclosure includes: a motion sensor; a temperature sensor configured to acquire temperature information on an external object; an image sensor configured to acquire an image on the external object; and a processor, and the processor is configured to: identify a motion of the electronic device and a motion of the external object using the motion sensor or the image; when the motion falls within a specified range, acquire the temperature information in a first method; when the motion falls within another specified range, acquire the temperature information in a second method; and provide an indicator corresponding to the temperature information through a display functionally connected with the electronic device.

A processing system includes sensor circuitry and processing circuitry. The sensor circuitry is configured to be coupled to force sensor electrodes, and is configured to drive the force sensor electrodes to obtain capacitive measurements. The processing circuitry is operatively connected to the sensor circuitry and configured to aggregate the capacitive measurements into an aggregated measurement, and apply, to the aggregated measurement, a capacitive measurement to temperature mapping to obtain a current temperature of the force sensor electrodes.

A processing system includes sensor circuitry and processing circuitry. The sensor circuitry is configured to be coupled to force sensor electrodes, and is configured to drive the force sensor electrodes to obtain capacitive measurements. The processing circuitry is operatively connected to the sensor circuitry and configured to aggregate the capacitive measurements into an aggregated measurement, and apply, to the aggregated measurement, a capacitive measurement to temperature mapping to obtain a current temperature of the force sensor electrodes.