A novel high temperature thermal sensing method and device is disclosed that can employ a dual-sensing platinum resistor encased in a mono-crystalline alpha-alumina (sapphire) substrate. The device can comprise four platinum trace elements, oriented with 90 rotational symmetry atop a 1120 oriented crystal lattice substrate. The resistance temperature detectors (RTD) temperature measurement calibration can then be monitored for drift and corrected by comparing the differential strain-derived measurement of temperature to the temperature derived from the RTD measurement. This can allow the device to self-calibrate via comparison of two functionally independent measures of electron mobility and operate in extreme environments which have previously caused RTD sensors to drift from their initial calibration and introduce an undefined measurement error.

A high-resistance sensor. The sensor includes a first low-resistance material and a second low-resistance material, each connected with a base material. The first low-resistance material and the second low-resistance material are separated by a gap. A stimulus causes the first low-resistance material and the second low-resistance to move toward each other. A high-resistance material is positioned within the gap intermediate the first low-resistance material and the second low-resistance material. The high-resistance material increases the resistance of a circuit formed by contact between the first low-resistance material and the second low-resistance material when the sensor is subject to the stimulus.

A high-resistance sensor. The sensor includes a first low-resistance material and a second low-resistance material, each connected with a base material. The first low-resistance material and the second low-resistance material are separated by a gap. A stimulus causes the first low-resistance material and the second low-resistance to move toward each other. A high-resistance material is positioned within the gap intermediate the first low-resistance material and the second low-resistance material. The high-resistance material increases the resistance of a circuit formed by contact between the first low-resistance material and the second low-resistance material when the sensor is subject to the stimulus.

A sensor arrangement has a structure extending along a length, an optical fibre carrier, and an optical fibre sensor carried by the optical fibre carrier. The optical fibre carrier is fixed to the structure proximal to each end of the structure and is formed of a first carrier portion and a second carrier portion that are movable relative to each other and is formed substantially of a material having a first coefficient of thermal expansion. The optical fibre sensor has a single measurement point and is fixed to the optical fibre carrier either side of the single measurement point; and the structure is formed of a material having a second coefficient of thermal expansion which is different to the first coefficient of thermal expansion