A semiconductor device includes a control signal generation circuit configured to shift a test mode signal in response to a clock signal to generate a plurality of control signals, and a plurality of temperature sensing circuits each including a first resistor having a resistance that varies depending on temperature and configured to generate a temperature sensing signal based on the resistance in response to a corresponding control signal of the plurality of control signals.

A temperature sensor includes: a housing; a connector disposed in the housing; a cover attached to the housing; a temperature sensing part disposed in a tip end portion in the cover, detecting temperature; a pair of lead wires having conductivity, connected to the temperature sensing part and a terminal of the connector; a guide tube having insulation properties, formed to have larger inner diameter than an outer diameter of each lead wire, the guide tube having a gap between each lead wire and the guide tube to cover each lead wire; a filler that directly or indirectly touches the temperature sensing part and a tip end of the guide tube, a tip end region inside the cover being filled with the filler; a space formed in a base end side in a region filled with the filler within the cover.

In-package temperature is controlled with higher accuracy. To this end, a temperature control circuit includes a temperature sensor arranged in a package and detecting temperature in the package, a heater current detection circuit detecting a driving amount of a heater, a target temperature generation circuit generating a target temperature from an intended temperature of a resonator and a detection value of the driving amount detected by the heater current detection circuit, a heater current driver controlling the heater so that the detection temperature detected by the temperature sensor coincides with the target temperature, and an Nth-order correction circuit receiving the detection value of the driving amount detected by the heater current detection circuit or a signal based on the target temperature and cancelling influence of a second or higher order fluctuation component generated in the heater current detection circuit on temperature of the resonator.

The present disclosure provides a thermal runaway detection circuit and a method, which is directed to field of batteries. The circuit includes: a sensing module including a terminating resistor; a detection module including a first voltage dividing resistor set and a second voltage dividing resistor set; and a processing module connected to the detection module, wherein the processing module is configured to obtain thermal runaway detection data, and determine whether thermal runaway occurs in the battery pack based on the thermal runaway detection data. The thermal runaway detection data includes first sampled data and second sampled data. The technical solutions in the present disclosure can improve safety of the battery pack.

An optimized thermocouple system and a method of optimizing a thermocouple system having a plurality of thermocouple probes and a junction box is provided and includes examining the thermocouple system to identify a first thermocouple probe of the plurality of thermocouple probes, wherein the first thermocouple probe includes a first positive leg and a first negative leg and is located electrically farthest from the junction box. The method includes calculating a first loop resistance between the first thermocouple probe and the junction box and configuring a second thermocouple probe of the plurality of thermocouple probes having a second positive leg, a second negative leg and a second loop resistance such that the second loop resistance is substantially equal to the first loop resistance.

There is provided a temperature measurement apparatus that differentiates temperature-measurement resolutions and temperature-calculation accuracies in accordance with the difference of the temperature-measurement range so as to make it possible to universalize temperature-calculation processing among two or more models having different temperature-measurement ranges. In a temperature measurement apparatus, for respective identifiers indicating models of an A/D conversion circuit, a temperature calculation circuit stores corresponding polynomials whose powers and the coefficients of the powers are different from one another, and calculates a temperature by use of the polynomial having the powers and the coefficients of the powers corresponding to the identifier for the A/D conversion circuit that is actually provided.

This invention discloses a chip wiring layer temperature sensing circuit, a temperature sensing method, a chip stereo temperature sensor, and a chip thereof. The chip wiring layer temperature sensing circuit includes a metal wiring layer temperature detection module, a pulse delay detection module, and a temperature transition module; wherein the metal wiring layer temperature detection module is disposed at a metal interconnection structure of a metal wiring layer of a chip; and the metal interconnection structure is electrically connected to the pulse delay detection module; wherein the pulse delay detection module includes a system high-speed clock, a delay data generated after a pulse passing through the metal wiring layer temperature detection module detected by the system high-speed clock, and the delay data was sent to the temperature transition module; wherein the temperature transition module calculates a temperature of the metal wiring layer according to the delay data.

Provided is a temperature sensor including a carrier substrate; a sensor unit positioned on the carrier substrate and including a base layer and an electric conductive layer, the base layer having surface hygroscopicity, and the electric conductive layer being on an external surface of the base layer; a pad unit electrically connected to opposite ends of the sensor unit; and a cover unit positioned on the sensor unit and configured to cover the sensor unit.

A system for determining a side of an electrical circuit exposed to a high temperature includes a printed circuit board having at least two outer edges and first and second board stiffeners of a first material disposed along the outer edges. The system also includes a control unit and a plurality of traces formed of a material that is different than the first material and has a second Seebeck coefficient. The control unit determines whether the first edge or second edge is closer to the high temperature based on a voltage differential between a trace connecting it to the first end of the first board stiffener and a trace connecting to the first end of the second board stiffener.

Embodiments of a device and method are disclosed. In an embodiment, a calibration circuit for a temperature sensor circuit includes a current source configured to generate a temperature independent reference current and further includes a voltage window generator circuit. The voltage window generator circuit is configured to generate a voltage window for the temperature sensor circuit using at least the temperature independent reference current. The voltage window is defined by a first reference voltage and a second reference voltage. The voltage window generator circuit is further configured to control a width of the voltage window to include a range of proportional to absolute temperature (PTAT) voltage outputs of a temperature sensor in the temperature sensor circuit.