An internal temperature measuring apparatus includes a base and a MEMS device disposed on the base. The MEMS device includes a top face and a support. The top face includes a first thermopile configured to measure a first temperature difference used to calculate an internal temperature and a second thermopile configured to measure a second temperature difference used to calculate the internal temperature together with the first temperature difference. An orientation in which a cold junction of each thermocouple constituting the first thermopile is viewed from a hot junction coincides with an orientation in which a cold junction of each thermocouple constituting the second thermopile is viewed from a hot junction.

An embodiment of the invention may include a semiconductor structure, method of use and method of manufacture. The structure may include a heating element located underneath a temperature-controlled portion of the device. A method of operating the semiconductor device may include providing current to a thin film heater located beneath a temperature-controlled region of the semiconductor device. The method may include performing temperature dependent operations in the temperature-controlled region.

A semiconductor product comprising: a semiconductor substrate and a test structure, the test structure comprising: a thermopile and at least one temperature sensitive element, the at least one temperature sensitive element being located in the substrate, or between the substrate and the thermopile.

A temperature difference measuring apparatus includes: a bottomed tubular package in which a top face side is opened; a MEMS device disposed on an inner bottom face of the package, the MEMS device comprising at least one thermopile that measures a temperature difference, which is generated in the MEMS device by inflow heat through a bottom of the package; and a heat quantity increasing unit configured to increase a heat quantity flowing out from the MEMS device onto the top face side of the bottomed tubular package.

Provided is a sensor package that measures an internal temperature of a measurement object. A sensor package includes: a package including a bottomed tubular casing and plural leads substantially parallel to each other, each of the leads piercing the bottomed tubular casing; and a MEMS chip including at least one thermopile that measures a temperature difference in an identical direction. The MEMS chip is disposed in an inner bottom surface of the bottomed tubular casing of the package in a posture in which a measurement direction of the temperature difference measured with the thermopile is substantially orthogonal to a longitudinal direction of each lead.

A semiconductor device may include a semiconductor die having an active region. The semiconductor device may also include a thermocouple mesh proximate to the active region. The thermocouple mesh may include a first set of wires of a first material extending in a first direction, and a second set of wires of a second material. The second material may be different from the first material. In addition, the second set of wires may extend in a second direction different than the first direction of the first wires.

A semiconductor device includes a substrate. The semiconductor device also includes a semiconductor layer disposed in the substrate. The semiconductor device further includes a first dielectric layer disposed on the semiconductor layer. The semiconductor device includes a second dielectric layer disposed on the first dielectric layer. The semiconductor device also includes a pair of thermopile segments disposed on the second dielectric layer. The first dielectric layer and the second dielectric layer form a chamber.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

Provided is an internal temperature measurement device capable of measuring an internal temperature of a measuring object for which the thermal resistance value of a non-heating body present on the surface side of the object is unknown, more accurately with better responsiveness than hitherto. The internal temperature measurement device 10 includes a MEMS chip 12 including: two cells 20a, 20b for measuring two heat fluxes for calculating an internal temperature of a measuring object for which the thermal resistance value of a non-heating body is unknown; and a cell 20c for increasing a difference between the heat fluxes.

A thin-film thermocouple for measuring the temperature of a ceramic matrix composite (CMC) component includes a first thermocouple leg and a second thermocouple leg deposited on a surface of a CMC component, where each of the first and second thermocouple legs has a length extending from a reference end to a working end thereof. The working ends of the first and second thermocouple legs are joined at a junction region on the surface. At least one of the first thermocouple leg and the second thermocouple leg comprises silicon carbide.