A method of calibrating temperature of a resistive element includes: generating a standard resistance-temperature (R-T) curve for the resistive element in an isothermal condition, wherein the resistive element comprises a material with a Curie temperature; generating an operational R-T curve for the resistive element during a normal operation of the resistive element; shifting the operational R-T curve toward the standard R-T curve at the Curie temperature to generate an adjusted operational R-T curve; and adjusting a measured temperature of the resistive element based on a resistance of the resistive element and the adjusted operational R-T curve.

In an embodiment a NTC sensor include a chip, two parallel wires, each wire having contact points, and contact-connections between the chip and the contact points of each of the wires, wherein a maximum lateral dimension of the NTC sensor in any direction perpendicular to a direction of extension of the wires is equal to or less than a sum of the lateral dimensions of the chip and the wires.

A method and a circuit take a measurement of a sensor having first, second and third lead wires by: (a) providing first, second and third terminals for voltage measurements; (b) connecting a current sensing device (e.g., a reference resistor) to provide a signal at the third terminal that is indicative of the current in the third lead wire of the sensor; (c) connecting a first protective device between the first lead wire of the sensor and the first terminal; (d) connecting a second protective device between the second lead wire of the sensor and the second terminal; (e) connecting a first current source to the first lead wire of the sensor; (f) connecting a second current source to the second lead wire of the sensor; and (g) measuring a first voltage across the first and second terminals and a second voltage across the third terminal and the voltage reference.

An electronic component module with leads includes an electronic component including terminal electrodes at both ends of the electronic component body, and first and second leads including metal wires covered with insulating members and arranged side-by-side, the first and second leads are electrically connected to the terminal electrodes, wherein exposed metal wire portions where the metal wires are exposed respectively from the first and second leads are provided on joint surfaces of the first and second leads on a same side and used to join to the terminal electrodes, the exposed metal wire portion of the first lead and the exposed metal wire portion of the second lead are spaced apart from each other by a predetermined interval in a lead length direction, the terminal electrodes are electrically connected to the metal wire exposed portions of the first and second leads, respectively, by solder.

A temperature detection circuit (1) includes a first transistor (Q1) of a bipolar type, and a second transistor (Q2) of a bipolar type, wherein the first transistor (Q1) and the second transistor (Q2) form a current mirror circuit (10), and the temperature of the amplifier circuit (30) is detected based on a temperature change of the first transistor (Q1) and the second transistor (Q2).

Provided is a temperature sensor film comprising a metal-thin film patterned on a resin film substrate, and having high temperature measurement accuracy. A conductive film (102) that is used for producing a temperature sensor film has a nickel thin film (10) on one principal surface of a resin film substrate (50). It is preferable that the interplanar spacing of nickel (111) plane in the nickel thin-film is less than 0.2040 nm. The temperature sensor film is obtained by patterning the nickel thin film to form a temperature-measuring resistance part and a lead part connected to the temperature-measuring resistance part.

An electroconductive film (101) comprises a metal thin-film (10) on a first main surface of a flexible substrate (40) that includes a resin film (5). The thickness of the flexible substrate is 1 mm or less. The absolute value |H.sub.2H.sub.1| of the difference between the heating dimensional change rate H.sub.1 of the electroconductive film and the heating dimensional change rate H.sub.2 of a film obtained by removing the metal thin-film from the electroconductive film is preferably 0.10% or less. There is a tendency that undulation of a temperature sensor film after patterning of the metal thin-film is further suppressed as the value of |H.sub.2H.sub.1| decreases.

A base having electrical conductivity and a plate shape for a semiconductor device evaluation jig has a front surface which includes a mount region where a semiconductor device is to be mounted. In this mount region, the base has a through hole extending through the base. A temperature detecting element is attached to the base. An electrode pad is electrically connected to the temperature detecting element and formed in the front surface side.

A device (1) for determining temperature and a measuring arrangement for determining flow that allows for a secure attachment on an object. The device has a measuring element (2) with a temperature-dependent electric resistance value. The measuring element (2) is surrounded by a thermally conductive fixing element (5) and is encompassed by a retaining bracket (6).

One aspect relates to a high-temperature sensor, having a coated substrate. The substrate contains a zirconium oxide or a zirconium oxide ceramic, at least one resistance structure and at least two connection contacts. The connection contacts electrically contact the resistance structure. The substrate is coated with an insulation layer. The insulation layer contains a metal oxide layer, the resistance structure and the free regions of the insulation layer, on which no resistance structure is arranged, are coated at least in regions with a ceramic intermediate layer, and a protective layer and/or a cover is arranged on the ceramic intermediate layer. At least one opening is formed in the insulation layer, which exposes at least sections of a surface of the substrate.