Determination of one or more operating conditions (leakage current, temperature and/or workload) of a functional transistor in a semiconductor integrated circuit (IC). The functional transistor provides an electrical current, which is provided as an input to a ring oscillator (ROSC). The ROSC is located in the IC proximate to the functional transistor and has an oscillation frequency in operation. The one or more operating conditions of the functional transistor are determined based on the oscillation frequency of the ROSC.

An active heat-dissipation system for a base station of a communication system includes a measuring module, configured to detect a temperature sensing signal of the base station; a controller, configured to receive the temperature sensing signal detected by the measuring module to set a preset temperature signal, to generate a difference between the temperature sensing signal and the preset temperature signal and a time derivative of the difference, and to output a control signal according to the difference and the time derivative of the difference based on a control program; and a power module, configured to receive the control signal and output an electrical signal to a heat-dissipation module according to the control signal, such that the heat-dissipation module performs a heat-dissipation process for the base station according to the electrical signal.

A temperature sensor circuit may include a ring oscillator being enabled according to an enable signal and outputting a square wave signal with a first frequency, a divider dividing the first frequency of the square wave signal from the ring oscillator to generate a pulse signal with a second frequency, a counter counting a time interval of the pulse signal outputted from the divider according to an external clock to generate a count signal, a latch temporarily storing a value of the counter signal according to the pulse signal and outputting a digital code, and a supply voltage monitor being enabled according to the pulse signal, comparing a reference voltage to one or more comparison voltages and generating a switching logic signal. The reference voltage is kept at a substantially constant level when a level of a supply voltage changes.

A temperature sensor circuit may include a ring oscillator being enabled according to an enable signal and outputting a square wave signal with a first frequency, a divider dividing the first frequency of the square wave signal from the ring oscillator to generate a pulse signal with a second frequency, a counter counting a time interval of the pulse signal outputted from the divider according to an external clock to generate a count signal, a latch temporarily storing a value of the counter signal according to the pulse signal and outputting a digital code, and a supply voltage monitor being enabled according to the pulse signal, comparing a reference voltage to one or more comparison voltages and generating a switching logic signal. The reference voltage is kept at a substantially constant level when a level of a supply voltage changes.

Fan controller (1) for a modular power supply having a fan (13). An output (8) is provided for transmitting control signals to the fan (13) for controlling fan speed. A plurality of sensor modules (20) are associated with a respective module (11, 6, 7) of the modular power supply. Each sensor module (20) includes a temperature detecting circuit comprising a sensor for sensing temperature variations in the respective module (11, 6, 7), a fan control circuit (30) galvanically isolated from the temperature detecting circuit for outputting a control signal to the output (8) for controlling the fan (13), and an optocoupler (10,9) for transferring an output signal from the temperature detecting circuit (20) to the fan control circuit (30) for generating the control signal.

Herein provided are methods and systems for detecting a high temperature condition of a gas turbine engine. A fuel flow to a combustor of the engine and a compressor outlet pressure of the engine are obtained. A ratio of the fuel flow to the compressor outlet pressure is determined. The ratio is compared to a threshold and a high temperature condition of the engine is detected when the ratio exceeds the threshold.

A time measuring circuit is provided with an oscillating circuit configured to generate a low-speed clock signal and a high-speed clock signal; and a measuring circuit configured to measure target time based on clock number of the low-speed clock signal and the high-speed clock signal outputted from the oscillating circuit, wherein the low-speed clock signal has a relatively low frequency and the high-speed clock signal has a relatively high frequency. The oscillating circuit is configured to switch from outputting the low-speed clock signal to outputting the high-speed clock signal when elapsed time from when a measurement of the target time started reaches a set value, and the set value is calculated by subtracting a predetermined value from a preliminary value which is provided by a preliminary measurement measuring the target time using only the low-speed clock signal.

A semiconductor structure includes a semiconductor device that includes an active region having a semiconductor fin and a gate structure across the semiconductor fin. The gate structure includes a gate electrode. The semiconductor structure also includes a gate line extending from the gate electrode and a metal wiring that is positioned above the gate line and is electrically connected to the gate line through two or more nodes. The semiconductor structure also includes a first measuring electrode and a second measuring electrode coupled respectively to two ends of the metal wiring, the first measuring electrode disposed closer to the gate electrode than the second measuring electrode. The semiconductor structure is configured to measure the temperature of the semiconductor device. During temperature measurement, the first measurement electrode is coupled to a first potential and the second measurement electrode is coupled to a second potential that is lower than the first potential.

A semiconductor structure includes a semiconductor device that includes an active region having a semiconductor fin and a gate structure across the semiconductor fin. The gate structure includes a gate electrode. The semiconductor structure also includes a gate line extending from the gate electrode and a metal wiring that is positioned above the gate line and is electrically connected to the gate line through two or more nodes. The semiconductor structure also includes a first measuring electrode and a second measuring electrode coupled respectively to two ends of the metal wiring, the first measuring electrode disposed closer to the gate electrode than the second measuring electrode. The semiconductor structure is configured to measure the temperature of the semiconductor device. During temperature measurement, the first measurement electrode is coupled to a first potential and the second measurement electrode is coupled to a second potential that is lower than the first potential.

Provided is a temperature sensing circuit and a temperature sensing method including a delay unit delaying an input clock signal to generate a feedback clock signal, and including logic gates of which delay times are variable according to temperature, a delay control unit comparing the feedback clock signal with a reference clock signal and controlling each of the logic gates of the delay unit according to the comparison result, and an input signal control unit selecting, as the input clock signal, any one of the feedback clock signal and the reference clock signal to input the input clock signal to the delay unit.