A temperature indicator includes a housing having a temperature detection assembly, switch circuitry, and a radio-frequency identification (RFID) module coupled to the switch circuitry. Responsive to the temperature detection assembly being subjected to a temperature exceeding a threshold, the switch circuitry causes a change in a value output by the RFID module when activated.

A temperature indicator includes a housing having a temperature detection assembly, switch circuitry, and a radio-frequency identification (RFID) module coupled to the switch circuitry. Responsive to the temperature detection assembly being subjected to a temperature exceeding a threshold, the switch circuitry causes a change in a value output by the RFID module when activated.

A passive thermal switch device, for regulating a temperature of a thermal component configured to generate heat, includes a first plate and a second plate. The first plate is provided on the thermal component. The first plate includes a thermal switch material that switches from an antiferromagnetic state to a ferromagnetic state upon exceeding a state transition temperature. The second plate includes a permanent magnet. The second plate is moveable between a thermal insulator position and a thermal conductor position based on a temperature of the thermal switch material. In the thermal insulator position, the second plate is spaced apart from the first plate. In the thermal conductor position, the second plate is in contact with the first plate.

A passive thermal switch device, for regulating a temperature of a thermal component configured to generate heat, includes a first plate and a second plate. The first plate is provided on the thermal component. The first plate includes a thermal switch material that switches from an antiferromagnetic state to a ferromagnetic state upon exceeding a state transition temperature. The second plate includes a permanent magnet. The second plate is moveable between a thermal insulator position and a thermal conductor position based on a temperature of the thermal switch material. In the thermal insulator position, the second plate is spaced apart from the first plate. In the thermal conductor position, the second plate is in contact with the first plate.

Tires formed of one or more tire plies are disclosed. In some implementations, tire plies may include a temperature sensor that may detect a temperature of a respective tire ply. The temperature sensor may include one or more split-ring resonators (SRRs), each having a resonance frequency that changes in response to one or more of a change in an elastomeric property or a change in the temperature of a respective one or more tire plies. In some aspects, the temperature sensor may include an electrically-conductive layer dielectrically separated from a respective one or more SRRs.

A sensor arrangement for determining a process variable of a medium in a containment comprises a sensor apparatus, a magnetic field apparatus, and a detection apparatus. The magnetic field apparat produces a magnetic field that penetrates the sensor apparatus, the detection apparatus and partially the medium. The sensor apparatus is embodied such that a magnetic property of a component of the sensor apparatus depends on the process variable, and the magnetic field of the magnetic field apparatus is influenceable by the sensor apparatus as a function of process variable. The detection apparatus is embodied to register a variable related with the magnetic field, especially the magnetic flux density, the magnetic susceptibility or the magnetic permeability, and, based on that variable, to determine the process variable. The sensor apparatus is arranged within an internal volume of the containment and the detection apparatus is arranged outside of the containment.

A sensor arrangement for determining a process variable of a medium in a containment comprises a sensor apparatus, a magnetic field apparatus, and a detection apparatus. The magnetic field apparat produces a magnetic field that penetrates the sensor apparatus, the detection apparatus and partially the medium. The sensor apparatus is embodied such that a magnetic property of a component of the sensor apparatus depends on the process variable, and the magnetic field of the magnetic field apparatus is influenceable by the sensor apparatus as a function of process variable. The detection apparatus is embodied to register a variable related with the magnetic field, especially the magnetic flux density, the magnetic susceptibility or the magnetic permeability, and, based on that variable, to determine the process variable. The sensor apparatus is arranged within an internal volume of the containment and the detection apparatus is arranged outside of the containment.

A method of calibrating temperature of a resistive element having a material with a Curie temperature includes generating a standard resistance-temperature (R-T) curve for the resistive element in isothermal conditions to identify values of the R-T curve and an inflection point at the Curie temperature, generating operational R-T curves for the resistive element over an operational time period, comparing the standard R-T curve to the operational R-T curves, and adjusting the operational curves to the standard R-T curve at the Curie temperature to calibrate temperature of the resistive element.

A passive temperature-sensing apparatus, which includes a capacitive sensing element that includes a capacitive sensing composition that includes a ferroelectric ceramic material that exhibits a measurable electrical Curie temperature that is below 30 degrees C. The capacitive sensing composition exhibits a negative slope of capacitance versus temperature over the temperature range of from 30 degrees C. to 150 degrees C.

A passive temperature-sensing apparatus, which includes a capacitive sensing element that includes a capacitive sensing composition that includes a ferroelectric ceramic material that exhibits a measurable electrical Curie temperature that is below 30 degrees C. The capacitive sensing composition exhibits a negative slope of capacitance versus temperature over the temperature range of from 30 degrees C. to 150 degrees C.