A method is disclosed for determining a current temperature of a heating element with a PTC thermistor property (PTC) with which a urea-water solution for cleaning the exhaust gas in an internal combustion engine of nitrogen oxides can be heated. According to the invention there is provision that a correction factor is formed from the quotient of a minimum resistance of the heating element and of a minimum resistance of a reference heating element, in that a resistance which is determined at a current temperature of the heating element is multiplied by the correction factor, and in that the current temperature of the heating element is determined from the corrected resistance value and a temperature dependence of the resistance of the reference heating element. The method according to the invention permits more precise determination and regulation of the temperature of the heating element.

A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

The disclosure provides a cooling solution that evaluates the thermal environment of a computer component based on transient thermal responses of the computer component. The transient thermal responses are generated by measuring the temperature rise of the computer component over a designated amount of time for multiple good assemblies and multiple bad assemblies to determine a duration and allowable temperature rise needed to set a pass/fail criteria for different failure modes of cooling devices. A cooling device may not be operating as designed due to damage, needed maintenance, missing thermal interface material (TIM), improper installation, etc. From the transient thermal responses, a thermal problem, such as a malfunctioning fan, can be determined and a corrective action can be performed.

A temperature control system, adapted to a central processing unit powered by a power supply module of an electronic device, is provided. The temperature control system includes a setting module, a first temperature detecting module, a second temperature detecting module, and a power adjusting module. The setting module is configured to set a target temperature of the CPU and a target temperature of the power supply module. The first temperature detecting module is configured to obtain a detected temperature of the CPU. The second temperature detecting module is electrically connected to the power supply module, to obtain a detected temperature of the power supply module. The power adjusting module is configured to adjust a control parameter of the CPU or the power supply module based on a first temperature difference between the target temperature of the CPU and the detected temperature of the CPU or a second temperature difference between the target temperature of the power supply module and the detected temperature of the power supply module.

A thermal transient response simulation is performed for a structure having a plurality of thermal model elements. The thermal transient response simulation determines a relation between transient thermal impedance of the structure and time and a relation between maximum temperature change of each of the thermal model elements and time. An onset time at which energy reaches each of the thermal model elements is determined based on the relation between maximum temperature change of each of the thermal model elements and time and a predetermined maximum temperature change threshold. An influence onset resistance value for each of the thermal model elements is determined by looking up a thermal resistance value corresponding to the onset time based on the relation between transient thermal impedance of the structure and time. A structural function is mapped based on the influence onset resistance value for each of the thermal model elements.

An apparatus can include a first adaptive filter, a second adaptive filter, a filter, and a third adaptive filter. The first adaptive filter can be configured to determine an estimated magnitude of a control signal associated with a control measure based on a magnitude of a signal from a sensor, wherein the signal is indicative of operating temperature of a memory system. The second adaptive filter can be configured to determine an estimated operating temperature based on a magnitude of the control signal. The filter can be configured to determine a change magnitude of the control signal based on a difference between the magnitude of the signal from the sensor and a threshold operating temperature. The third adaptive filter can be configured to determine a throttle rate at which to apply the control signal based on a change magnitude of the control signal.

The present invention generally relates to a method for traffic control, and an electronic device therefor. An operation method of an electronic device may comprise the steps of: measuring the temperature of the electronic device through at least one sensor; checking an operation state of at least one application being executed in the electronic device; and controlling data throughput for each of the at least one application on the basis of the operation state of the at least one application if the measured temperature is equal to or greater than a reference value. Other various embodiments are possible.

According to one embodiment, a controller acquires temperature data periodically while receiving a first mode designating signal, writes the temperature data into a nonvolatile storage while or after the first mode designating signal, acquires temperature data after a lapse of a predetermined time from designation of the second mode, writes the temperature data into the nonvolatile storage while or after a lapse of a predetermined time since the designation of the second mode, acquires temperature data at a timing of changing from the second mode to the first mode, and write the acquired temperature data into the nonvolatile storage at or after the timing of changing from the second mode to the first mode.

An information processing apparatus includes: a fan that cools a first processor; a dust-proof bezel that prevents foreign matter from entering a casing; a memory; and a second processor coupled to the memory and the second processor configured to: measure a temperature of the first processor and an air volume of an air flow which passes through the dust-proof bezel; compare a registered air volume to the measured air volume when the measured temperature matches a registered temperature included in comparison information stored in the memory, the registered air volume being included in the comparison information in association with the matched temperature, the comparison information including a registered temperature of the first processor and a registered air volume of an air flow generated by the fan in association with each other; and determine abnormality in the dust-proof bezel based on a result of the comparison.

An embodiment of the invention may include a semiconductor structure, method of use and method of manufacture. The structure may include a heating element located underneath a temperature-controlled portion of the device. A method of operating the semiconductor device may include providing current to a thin film heater located beneath a temperature-controlled region of the semiconductor device. The method may include performing temperature dependent operations in the temperature-controlled region.