Patent classifications
G01L1/241
Stretchable strain sensors and devices
A stretchable strain sensor may exhibit wavelength selectivity according to a thickness change of a thickness of the stretchable strain sensor, in a thickness direction extending parallel to the thickness of the stretchable strain sensor, due to elongation of the stretchable strain sensor in an elongation direction extending perpendicular to the thickness direction. The stretchable strain sensor may have an emission spectrum that changes according to strain variation of a strain on the stretchable strain sensor.
Systolic processor system for a light ranging system
A ROIC can perform systolic processing of light detectors. The ROIC performs the systolic processing of the light detectors to capture at least i) when, in time units, an initial photon of its reflected light pulse is captured by each of the light detectors in the array, ii) where geographically in terms of column and row address of the light detector capturing its photon is located in the array, iii) scan out data captured by the light detectors on the when in time units, and the where geographically that the photon was captured in a given light detector in the array, and then iv) analyze the data on the when and the where with an algorithm to know exactly when exactly, in terms of time units, the photon was captured relative to the input from the clock circuit in order to determine an objects characteristics.
EVALUATION METHOD
Provided is an evaluation method capable of evaluating stress on a bond which is difficult to detect by Raman spectroscopy. The present disclosure relates to an evaluation method including using infrared absorption spectra measured on a rubber specimen under application of no tensile force and under application of a tensile force to calculate an amount of peak shift caused by application of the tensile force, and evaluating stress in the rubber specimen from the amount of peak shift.
Visualizing and modeling thermomechanical stress using photoluminescence
An electronics system may include a substrate, an electronic device bonded to the substrate, a plurality of photoluminescent particles disposed on the electronic device, an illuminator, a sensor, and a control module. The illuminator can illuminate the electronic device. The sensor can capture a first set of positions of the photoluminescent particles on the electronic device when the electronic device is not operating under a load and a second set of positions of the photoluminescent particles when the electronic device is operating under a load. The control module can determine thermomechanical stress on the electronic device based at least in part on a difference between the first set of positions and the second set of positions.
STRETCHABLE STRAIN SENSOR, COMBINATION SENSOR, AND DISPLAY PANEL AND DEVICE
A stretchable strain sensor includes a light-emitting element, an optical structure, and a photo-detective element. The stretchable strain sensor is located in a path of light emitted from the light-emitting element. The optical structure is configured to have optical properties that change in response to stretching of at least a portion of the stretchable strain sensor. The photo-detective element is configured to detect light transmitted through the optical structure or reflected through the optical structure.
STRETCHABLE STRAIN SENSORS AND DEVICES
A stretchable strain sensor may exhibit wavelength selectivity according to a thickness change of a thickness of the stretchable strain sensor, in a thickness direction extending parallel to the thickness of the stretchable strain sensor, due to elongation of the stretchable strain sensor in an elongation direction extending perpendicular to the thickness direction. The stretchable strain sensor may have an emission spectrum that changes according to strain variation of a strain on the stretchable strain sensor.
DISPLACEMENT MEASUREMENT SYSTEM
Provided is a displacement measurement system including: a sensor that is contactable with a measurement target object and includes a first spacer that has at least a one-dimensional spread, and two or more types of light emitting particles that are distributed over the spread of the first spacer and emit light at different wavelengths by an excitation energy; an excitation energy source that causes the two or more types of light emitting particles included in the sensor to emit light; and a light receiver that receives light emitted from the sensor.
MECHANOPHORE-GRAFTED POLYMERS TO FORM STRESS-RESPONSIVE THERMOSET NETWORK
Compositions including a thermosetting polymer network and a mechanophore covalently bonded to the thermosetting polymer network are provided. Substrates including the compositions are provided. In addition, methods of making the compositions and methods of monitoring stress on a substrate comprising the compositions are provided.
System and method of manufacturing suspension seating
A method of manufacturing suspension seating includes providing a blank to be used in a suspension member. The blank has a non-visible marker. The method also includes illuminating the non-visible marker with an excitation source. The non-visible marker becomes detectable when illuminated by the excitation source. The method further includes sensing the non-visible marker with a sensor. The sensor is configured to detect the non-visible marker when illuminated by the excitation source. The method also includes determining, by a controller, a characteristic of the blank using the non-visible marker. The controller is in communication with the sensor and configured to receive information related to the non-visible marker from the sensor. The method further includes adjusting the blank to achieve the desired characteristic.
Scatterometry Based Methods And Systems For Measurement Of Strain In Semiconductor Structures
Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.