A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

An object of the present invention is to realize a pressure sensor with a small variation in sensor characteristics. The pressure sensor includes a diaphragm having longitudinal and lateral sides, and four strain gauges disposed on the diaphragm. The four strain gauges are arranged at a center of the diaphragm. Two of the four strain gauges are arranged along a lateral direction, and other two strain gauges are arranged along a longitudinal direction.

Aspects of the subject disclosure include a pressure-sensing device consisting of a housing including a membrane and one or more piezoresistive elements disposed on the membrane to sense a displacement due to a deflection of the membrane. A first set of electrodes is disposed over the membrane, and a second set of electrodes is disposed on a permeable port of the device at a distance from the membrane. The first and second sets of electrodes form an electrostatic actuator to exert a repulsive force onto the membrane to reduce the deflection of the membrane.

A dynamic quantity sensor includes a first substrate and a second substrate. The first substrate has one surface, another surface opposite to the one surface, and a depressed portion defining a thin portion. The second substrate has one surface attached to the first substrate and a recessed portion disposed corresponding to the depressed portion. At least a part of a first projection line obtained by projecting the recessed portion is disposed outside of a second projection line obtained by projecting a boundary line between side walls of the depressed portion and the thin portion. The thin portion disposed inside the periphery of the recessed portion provides a film portion which is displaceable corresponding to a physical quantity applied to the film portion, and a region sandwiched between the film portion and a portion connected to the periphery of the recessed portion provides a stress release region.

A ceramic pressure sensor is described which is produced using an alternative production method and has a ceramic base body, a ceramic measuring membrane which is disposed on the base body and is to be charged with a pressure to be measured, and a pressure measuring chamber enclosed in the base body below the measuring membrane. A method to produce the pressure sensor by means of which, in particular, more complex shapes of the measuring membrane and/or the base body are producible with minimal pores wherein the base body and/or the measuring membrane have layers applied on each other in a 3-D printing method and produced by the selective laser melting of nanopowder layers.

A microstructure and a method for manufacturing the same includes: disposing a liquid film on a surface of a substrate, wherein a solid-liquid interface is formed where the liquid film is in contact with the substrate; and irradiating the substrate with a laser of a predetermined waveband to etch the substrate at the solid-liquid interface, wherein the position where the laser is irradiated on the solid-liquid interface moves at least along a direction parallel to the surface of the substrate, and the absorption rate of the liquid film for the laser is greater than the absorption rate of the substrate for the laser.

A glass wafer is provided that includes a sheetlike glass substrate with an opening. The sheetlike glass substrate is configured for use in a sensor selected from a group consisting of a pressure sensor, a piezoresistive sensor, a capacitive pressure sensor, and a piezoresistive pressure sensor. The opening is defined in the glass substrate from a first surface to a second, opposite surface. The opening has a cross-sectional area that is delimited by a straight portion having a minimum length of at least 10 μm and a side face with a surface characterized by a skewness (Ssk) of at most 5.0.

A semiconductor pressure sensor device in which the shape or the structure of a connector portion can be easily changed and which has high waterproof performance. A terminal housing and a second case are engaged with each other via an engagement structure. The terminal housing and a first case are fitted with each other via a fitting structure. Thus, the first case and the second case are fixed to each other via the terminal housing. The first case is fitted in the second case. Then, the terminal housing is fitted with the first case, and the terminal housing is engaged with the second case substantially at the same time. Through such simple process, an opening portion of the first case is covered and a connector portion configured to enable external terminals to be connected to ends, located on one side, of a plurality of lead terminals is formed.

A demountable tank, and method of constructing same, having a plurality of precast wall panels retained by a cable tensioning system to form a continuous, preferably circular, wall. The tank can be easily assembled at a site with prefabricated parts and easily deconstructed when no longer needed. The shape of the precast wall panels in conjunction with the cable tensioning system means no additional frame or supports are required.

A method and structure for a PLCSP (Package Level Chip Scale Package) MEMS package. The method includes providing a MEMS chip having a CMOS substrate and a MEMS cap housing at least a MEMS device disposed upon the CMOS substrate. The MEMS chip is flipped and oriented on a packaging substrate such that the MEMS cap is disposed above a thinner region of the packaging substrate and the CMOS substrate is bonding to the packaging substrate at a thicker region, wherein bonding regions on each of the substrates are coupled. The device is sawed to form a package-level chip scale MEMS package.