A system is for detecting a location of a touch input on a surface of a propagating medium. The system includes a transmitter coupled to the propagating medium and configured to emit a signal. The signal has been allowed to propagate through the propagating medium and the location of the touch input on the surface of the propagating medium is detected at least in part by detecting an effect of the touch input on the signal that has been allowed to propagate through the propagating medium. The system includes a piezoresistive sensor coupled to the propagating medium. The piezoresistive sensor is configured to at least detect a force, pressure, or applied strain of the touch input on the propagating medium.

A film resistor and a thin-film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer including a first transition metal carbide.

An integral sensor system is provided. In one embodiment, the system includes a sensor installed in a carrier and a component having a body for receiving a fluid. The carrier is integrated into the component to enable the sensor to detect one or more characteristics of the fluid, and the carrier is integrated into the component such that an interface between the carrier and the component is a fully integral pressure boundary without a seal connection between the carrier and the component. The carrier can be welded to the component to form the integral pressure boundary. Additional systems, devices, and methods are also disclosed.

A pressure sensor with double measuring scale includes: a flexible body designed to undergo deflection as a function of a the pressure; piezoresistive transducers for detecting the deflection; a first focusing region designed to concentrate, during a first operating condition, a first value of the pressure in a first portion of the flexible body so as to generate a deflection of the first portion of the flexible body; and a second focusing region designed to concentrate, during a second operating condition, a second value of said pressure in a second portion of the flexible body so as to generate a deflection of the second portion of the flexible body. The piezoresistive transducers correlate the deflection of the first portion of the flexible body to the first pressure value and the deflection of the second portion of the flexible body to the second pressure value.

Certain implementations of the disclosed technology may include systems and methods for extending a frequency response of a transducer. A method is provided that can include receiving a measurement signal from a transducer, wherein the measurement signal includes distortion due to a resonant frequency of the transducer. The method includes applying a complementary filter to the measurement signal to produce a compensated signal, wherein applying the complementary filter reduces the distortion to less than about +/−1 dB for frequencies ranging from about zero to about 60% or greater of the resonant frequency. The method further includes outputting the compensated signal.

The present invention is related to a sensor. In particular, the present invention is related to a pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a pressure sensor die is provided. The pressure sensor die is uniformly compressed by the external pressure to be measured and can deform freely inside the chamber. The pressure sensor die is primarily constructed of single crystalline silicon and comprises a substrate and a cap connected together. A recess is formed on the cap. The recess forms a sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. The substrate further comprises a plurality of piezoresistive sensing elements which are located inside the sealed cavity. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.

The present invention is related to a sensor. In particular, the present invention is related to a pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a pressure sensor die is provided. The pressure sensor die is uniformly compressed by the external pressure to be measured and can deform freely inside the chamber. The pressure sensor die is primarily constructed of single crystalline silicon and comprises a substrate and a cap connected together. A recess is formed on the cap. The recess forms a sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. The substrate further comprises a plurality of piezoresistive sensing elements which are located inside the sealed cavity. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.

A circuit for biasing and reading out a bridge sensor structure comprises at least two pairs of connection terminals. The circuit comprises an excitation signal generator for generating an excitation signal for biasing and/or exciting the bridge, in which the excitation signal is provided as a non-constant periodic continuous function of time, and a detection circuit for obtaining the sensor signal from the bridge sensor structure by electrically connecting the detection circuit to any pair of connection terminals while applying the excitation signal to another pair. The circuit comprises a switch unit for switching the electrical excitation signal and for switching the detection circuit. A controller controls the switch unit to switch the first pair from being connected to the excitation signal generator at a time when the generated excitation signal is in a predetermined signal range where the excitation signal value is substantially equal to zero.

Implementations of absolute pressure sensor devices may include a microelectromechanical system (MEMS) absolute pressure sensor coupled over a controller die. The MEMS absolute pressure sensor may be mechanically coupled to the controller die and may also be configured to electrically couple with the controller die. A perimeter of the controller die may be one of the same size and larger than a perimeter of the MEMS absolute pressure sensor. The controller die may be configured to electrically couple with a module through an electrical connector.

Sensor signal detection device includes: a sensor element; a temperature detection element connected in series with the sensor element; a constant voltage power supply applying constant voltage to a series circuit of the temperature detection element and the sensor element; a short-circuit switch short-circuiting both terminals of the temperature detection element; and a controller controlling a changeover between a sensor detection state and a temperature detection state. In the sensor detection state, a sensor signal from the sensor element is obtained by turning on the short-circuit switch to apply the constant voltage across both terminals of the sensor element from the constant voltage power supply. In the temperature detection state, a temperature detection signal of the temperature detection element is obtained by turning off the short-circuit switch to connect the temperature detection element to the sensor element in series and applying constant voltage from the constant voltage power supply.