Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

The design of a vacuum gauge utilizing a micromachined silicon vacuum sensor to measure the extended vacuum range from ambient to ultrahigh vacuum by registering the gas thermal properties at each vacuum range is disclosed in the present invention. This single device is capable of measuring the pressure range from ambient and above to ultrahigh vacuum. This device applies to all types of vacuum measurement where no medium attack silicon is present. The disclosed vacuum gauge operates with thermistors and thermal pile on a membrane of the thermal isolation diaphragm structure with a heat isolation cavity underneath.

The design of a vacuum gauge utilizing a micromachined silicon vacuum sensor to measure the extended vacuum range from ambient to ultrahigh vacuum by registering the gas thermal properties at each vacuum range is disclosed in the present invention. This single device is capable of measuring the pressure range from ambient and above to ultrahigh vacuum. This device applies to all types of vacuum measurement where no medium attack silicon is present. The disclosed vacuum gauge operates with thermistors and thermal pile on a membrane of the thermal isolation diaphragm structure with a heat isolation cavity underneath.

The disclosure includes an ionization chamber, a first electron multiplier, and a second electron multiplier. The ionization chamber is configured to receive gas molecules from an environment at a pressure. The first electron multiplier is configured to receive a plurality of photons from a photon source, generate a first plurality of electrons from the plurality of photons, and discharge the first plurality of electrons into the ionization chamber to generate a plurality of gas ions from at least a portion of the gas molecules. The second electron multiplier is configured to receive the plurality of gas ions from the ionization chamber and generate a second plurality of electrons from the plurality of gas ions that is proportional to a quantity of the plurality of gas ions. A quantity of electrons of the second plurality of electrons is indicative of the pressure.

The disclosure includes an ionization chamber, a first electron multiplier, and a second electron multiplier. The ionization chamber is configured to receive gas molecules from an environment at a pressure. The first electron multiplier is configured to receive a plurality of photons from a photon source, generate a first plurality of electrons from the plurality of photons, and discharge the first plurality of electrons into the ionization chamber to generate a plurality of gas ions from at least a portion of the gas molecules. The second electron multiplier is configured to receive the plurality of gas ions from the ionization chamber and generate a second plurality of electrons from the plurality of gas ions that is proportional to a quantity of the plurality of gas ions. A quantity of electrons of the second plurality of electrons is indicative of the pressure.

Acoustic transducers for generating electrical signals in response to acoustic signals are disclosed. In some embodiments, an acoustic transducer includes an at least partially evacuated hermetically sealed cavity defined in part by a first diaphragm. The acoustic transducer also includes a backplate disposed at least partially within the cavity. The cavity having a pressure lower than atmospheric pressure. The acoustic transducer further includes a pressure sensor coupled to the backplate and configured to sense the pressure in the cavity.

Acoustic transducers for generating electrical signals in response to acoustic signals are disclosed. In some embodiments, an acoustic transducer includes an at least partially evacuated hermetically sealed cavity defined in part by a first diaphragm. The acoustic transducer also includes a backplate disposed at least partially within the cavity. The cavity having a pressure lower than atmospheric pressure. The acoustic transducer further includes a pressure sensor coupled to the backplate and configured to sense the pressure in the cavity.

A partial pressure detector and methods of detecting a partial pressure are provided, in which a thermal conductivity gauge, such as a Pirani gauge, is configured to sense a pressure of a mixture of gases within a vacuum chamber. An input of the partial pressure detector is configured to receive a total pressure reading from a species-independent pressure sensor of the mixture of gases in the vacuum chamber, and a controller configured to provide an output representing an amount of a species of gas in the vacuum chamber as a function of the pressure as sensed by the thermal conductivity gauge and the received total pressure reading. The controller has a resolution, and a range of the resolution is scaled to a range of expected partial pressures of the species. The output can be a partial pressure or a weighted partial pressure of the gas species.

A partial pressure detector and methods of detecting a partial pressure are provided, in which a thermal conductivity gauge, such as a Pirani gauge, is configured to sense a pressure of a mixture of gases within a vacuum chamber. An input of the partial pressure detector is configured to receive a total pressure reading from a species-independent pressure sensor of the mixture of gases in the vacuum chamber, and a controller configured to provide an output representing an amount of a species of gas in the vacuum chamber as a function of the pressure as sensed by the thermal conductivity gauge and the received total pressure reading. The controller has a resolution, and a range of the resolution is scaled to a range of expected partial pressures of the species. The output can be a partial pressure or a weighted partial pressure of the gas species.

A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively. The sensor comprises a rectangular membrane created in a silicon substrate which has a thin polysilicon layer and a thin residual thermal reorganized porous silicon layer both attached on its back side, and configured to have its three sides clamped to the frame formed in the silicon substrate which surrounds and supports the membrane and the other side free to the frame, a cavity created in the silicon substrate, positioned under the membrane and having its flat bottom opposite to the membrane, its three side walls shaped as curved planes and the other side wall shaped as a vertical plane, a heater or an infrared absorber positioned on the membrane, close to and parallel with the free side of the membrane and a thermopile positioned on the membrane and consists of several thermocouples connected in series and having its hot junctions close to the heater and its cold junctions extended to the frame.