A method of forming a sample and performing correlative S/TEM and APM analysis is provided wherein a sample containing a region of interest is cut from a bulk of sample material and formed into an ultra-thin lamella. The lamella is then analyzed with an S/TEM to form an image. The lamella sample and mount may then go through a cleaning process to remove any contamination. The lamella containing the ROI is then embedded within a selected material and is formed into a needle-shaped sample. The needle-shaped sample is then analyzed with the APM and the resulting data is merged and correlated with the S/TEM data.

A method of forming a sample and performing correlative S/TEM and APM analysis is provided wherein a sample containing a region of interest is cut from a bulk of sample material and formed into an ultra-thin lamella. The lamella is then analyzed with an S/TEM to form an image. The lamella sample and mount may then go through a cleaning process to remove any contamination. The lamella containing the ROI is then embedded within a selected material and is formed into a needle-shaped sample. The needle-shaped sample is then analyzed with the APM and the resulting data is merged and correlated with the S/TEM data.

An integrated station for extracting specimens suitable for viewing by a transmission electron microscope from a patterned semiconductor wafer, including a wafer cassette holder; a wafer transfer device; a nanomachining device, including a scanning electron microscope and a focused ion beam, a vacuum load lock and an operator control device, and wherein the operator control device notes locations of created lamellae; a plucker device; a control computer, adapted to control the wafer transfer device and the plucker device, commanding the plucker device to remover lamellae at the locations noted by the operator control device; and a user monitor and data input device, communicatively coupled to the computer. The wafer transfer device can transfer wafers from the wafer cassette holder to the vacuum load lock; from the vacuum load lock to the plucker device and from the plucker device to the wafer cassette holder.

An integrated station for extracting specimens suitable for viewing by a transmission electron microscope from a patterned semiconductor wafer, including a wafer cassette holder; a wafer transfer device; a nanomachining device, including a scanning electron microscope and a focused ion beam, a vacuum load lock and an operator control device, and wherein the operator control device notes locations of created lamellae; a plucker device; a control computer, adapted to control the wafer transfer device and the plucker device, commanding the plucker device to remover lamellae at the locations noted by the operator control device; and a user monitor and data input device, communicatively coupled to the computer. The wafer transfer device can transfer wafers from the wafer cassette holder to the vacuum load lock; from the vacuum load lock to the plucker device and from the plucker device to the wafer cassette holder.

Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.

Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.

Disclosed is a qualitative evaluation method of a volumetric defect density due to other grains having different crystal orientations from a single crystal matrix in a (001) monoclinic gallium oxide sample or a (010) monoclinic gallium oxide sample.

The method includes the steps of: forming an etch pit by etching an observation plane of a single crystal; and selecting a quadrilateral etch pit formed by volumetric defects except for void defects.

Disclosed is a qualitative evaluation method of a volumetric defect density due to other grains having different crystal orientations from a single crystal matrix in a (001) monoclinic gallium oxide sample or a (010) monoclinic gallium oxide sample.

The method includes the steps of: forming an etch pit by etching an observation plane of a single crystal; and selecting a quadrilateral etch pit formed by volumetric defects except for void defects.

An ion milling apparatus has: a sample holder including a shield member for shielding the sample except for a portion to be milled; and a sample locking member cooperating with the shield member such that the sample is sandwiched and held therebetween. The shield member has an edge portion that determines a milling position on or in the sample. The sample locking member is disposed downstream of the edge portion in the direction of irradiation by the ion beam and has a support portion cooperating with the edge portion to support the milled portion therebetween. The support portion has a first surface making contact with the sample and a second surface making a given angle to the first surface. The given angle is equal to or less than 90°.

An ion milling apparatus has: a sample holder including a shield member for shielding the sample except for a portion to be milled; and a sample locking member cooperating with the shield member such that the sample is sandwiched and held therebetween. The shield member has an edge portion that determines a milling position on or in the sample. The sample locking member is disposed downstream of the edge portion in the direction of irradiation by the ion beam and has a support portion cooperating with the edge portion to support the milled portion therebetween. The support portion has a first surface making contact with the sample and a second surface making a given angle to the first surface. The given angle is equal to or less than 90°.