Provided herein are systems, methods, and apparatuses for providing a real-time global bio-surveillance and response solution. The systems and apparatuses may include one or more sentinel subsystems and one or more surge subsystems that each include a real-time, cloud-based, distributed, interconnected set of hardware, software, and/or firmware for comprehensive surveillance, complete detection, and immediate response various to biological, chemical, and/or bio-chemical anomalies, for example, a new or emerging pathogen or other health condition.

A detection substrate includes a substrate, a wetting layer, a barrier layer, a reaction layer, a counter electrode layer, a reference electrode layer, an insulating frame, and a plurality of wirings. The substrate includes a counter electrode, a working electrode, and a reference electrode. The reaction layer is located on the barrier layer. A surface of the reaction layer has a naturally micro-etched nano pattern. The counter electrode layer has an accommodating area which accommodates the reaction layer, and the naturally micro-etched nano pattern is exposed from the accommodating area. The insulating frame is located on a measurement area. The detection substrate has electrodes. During use, a predetermined reaction potential is applied to the detection substrate by an electrochemical device, and a Raman spectroscopy analysis is performed to obtain a strengthened Raman spectroscopy signal. A Raman spectrum detection system and a Raman spectrum detection method are also provided.

An evaluation method of a silicon epitaxial wafer, including using a photoluminescence (PL) measuring apparatus to measure a PL spectrum of the mirror wafer and adjusting the apparatus so emission intensity of a TO-line becomes 30000 to 50000 counts, irradiating the silicon epitaxial wafer with an electron beam, measuring PL spectrum from an electron beam irradiation region, and sorting out and accepting a silicon epitaxial wafer which has emission intensity resulting from a C.sub.iC.sub.s defect of the PL spectrum being 0.83% or less of the emission intensity of the TO-line and from a C.sub.iO.sub.i defect being 6.5% or less of the emission intensity of the TO-line.

An evaluation method of a silicon epitaxial wafer, including using a photoluminescence (PL) measuring apparatus to measure a PL spectrum of the mirror wafer and adjusting the apparatus so emission intensity of a TO-line becomes 30000 to 50000 counts, irradiating the silicon epitaxial wafer with an electron beam, measuring PL spectrum from an electron beam irradiation region, and sorting out and accepting a silicon epitaxial wafer which has emission intensity resulting from a C.sub.iC.sub.s defect of the PL spectrum being 0.83% or less of the emission intensity of the TO-line and from a C.sub.iO.sub.i defect being 6.5% or less of the emission intensity of the TO-line.

The disclosure concerns methods for the detection of an analyte in a sample by electro-chemiluminescence using new reagent compositions. New reagent compositions, reagent kits for measuring electrochemiluminscence (ECL) and electrochemiluminescence detection methods using the new reagent compositions are disclosed. In particular, the disclosure relates to the use of novel combinations of compounds which can be used in said measurements to provide improved assay performance.

The disclosure concerns methods for the detection of an analyte in a sample by electro-chemiluminescence using new reagent compositions. New reagent compositions, reagent kits for measuring electrochemiluminscence (ECL) and electrochemiluminescence detection methods using the new reagent compositions are disclosed. In particular, the disclosure relates to the use of novel combinations of compounds which can be used in said measurements to provide improved assay performance.

We describe apparatuses, method, reagents, and kits for conducting assays as well as process for their preparation. They are particularly well suited for conducting automated sampling, sample preparation, and analysis in a multi-well plate assay format. For example, they may be used for automated analysis of liquid samples in a clinical point of care setting.

A sensing device for monitoring electromagnetic radiation emanating from a plasma processing system. The sensing device may, for example, comprise at least two of a first probe for detecting a time varying RF electric field, a second probe for detecting a time varying RF magnetic field, and an optical probe for detecting the modulated light emission. The sensing device may, for example, further comprise a signal processing unit configured to receive a signal from each probe and to monitor the electromagnetic radiation with respect to only a single frequency of each signal.

A sensing device for monitoring electromagnetic radiation emanating from a plasma processing system. The sensing device may, for example, comprise at least two of a first probe for detecting a time varying RF electric field, a second probe for detecting a time varying RF magnetic field, and an optical probe for detecting the modulated light emission. The sensing device may, for example, further comprise a signal processing unit configured to receive a signal from each probe and to monitor the electromagnetic radiation with respect to only a single frequency of each signal.

A measurement system includes a drive device configured to drive the plurality of optical semiconductor elements, a probe unit including a plurality of optical connection devices configured to receive respective emitted lights from the plurality of optical semiconductor elements and a processing device including a plurality of photoelectric converters. Each of the optical connection devices is connected to each of the photoelectric converter, and at least some of the emitted lights received by the optical connection devices are input to the photoelectric converter. The photoelectric converter converts the input emitted lights into electric signals.