Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.

A multipulse-induced spectroscopy method based on a femtosecond plasma grating includes: pre-exciting a sample on a stage by providing a femtosecond pulse to form the femtosecond plasma grating; providing a post-pulse on the sample at an angle to excite the sample to generate a plasma, wherein the post-pulse comprises one or more femtosecond pulses, there is a time interval between the femtosecond pulse and the post-pulse, and the time interval is less than a lifetime of the femtosecond plasma grating; and receiving and analyzing a fluorescence emitted from the plasma to determine element information of the sample.

A detection method based on laser-induced breakdown spectroscopy enhanced by a two-dimensional plasma grating includes: generating a femtosecond laser pulse by a femtosecond laser, and splitting the femtosecond laser pulse into three sub-pulses by a beam splitting unit; focusing the three sub-pulses separately by a focusing unit to allow focused sub-pulses to be overlapped at an intersection in space, wherein before reaching the intersection, the three sub-pulses form two planes; synchronizing the three sub-pulses in a time domain by adjusting optical paths of the three sub-pulses in such a way that they have the same optical length and the three sub-pulses arrive at the intersection in space simultaneously and form the two-dimensional plasma grating; and exciting a sample on a stage based on the two-dimensional plasma grating to generate a plasma cluster, and acquiring a spectrum of the sample.

A change in a substance in a depth direction of an analyte is easily estimated. An analysis and observation device includes: a library holding section that holds a substance library in which a substance is associated with a type of an element constituting the substance and a content of the element; and a component analysis section that estimates a type of an element constituting a substance and a content of the element based on a spectrum, and estimates the substance based on estimated characteristics and the substance library. The component analysis section estimates a type of an element constituting a substance, a content of the element, and the substance at each of a plurality of positions having different analysis depths.

A device that is configured to detect spectrally resolved emission from a material is disclosed. The device includes an optical cavity comprising a pair of substrates separated by a distance defined to restrict a photonic density of states (DOS) of the material to be detected, a detector oriented with respect to the optical cavity to receive emission from the optical cavity and a controller configured to control the distance. The pair of substrates includes facing reflective surfaces.

The semiconductor failure analysis device includes: a light source configured to generate irradiation light with which the semiconductor device is irradiated; a solid immersion lens disposed on an optical path of the irradiation light; a light detection unit configured to receive reflected light and to output a detection signal according to the reflected light; an optical system 6 disposed between the light source and the solid immersion lens to emit the irradiation light to the semiconductor device via the solid immersion lens and disposed between the solid immersion lens and the light detection unit to emit the reflected light received via the solid immersion lens to the light detection unit. The light source emits the irradiation light having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens is formed of GaAs.

The semiconductor failure analysis device includes: a light source configured to generate irradiation light with which the semiconductor device is irradiated; a solid immersion lens disposed on an optical path of the irradiation light; a light detection unit configured to receive reflected light and to output a detection signal according to the reflected light; an optical system 6 disposed between the light source and the solid immersion lens to emit the irradiation light to the semiconductor device via the solid immersion lens and disposed between the solid immersion lens and the light detection unit to emit the reflected light received via the solid immersion lens to the light detection unit. The light source emits the irradiation light having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens is formed of GaAs.

It is possible to save time and effort required for imaging of an analysis point and to improve usability of an analysis device. An analysis and observation device as a laser-induced breakdown spectroscope includes: a first camera, an electromagnetic wave emitter that emits laser light to a sample; a reflective object lens that collects plasma light generated in the sample; first and second detectors that generate intensity distribution spectra; and a processor. The processor controls the first camera in response to reception of a start trigger signal to generate a pre-irradiation image that is an image before the sample is irradiated with the laser light, and controls the electromagnetic wave emitter after controlling the first camera to emit the laser light to the sample.

The present invention provides a composite oxide that can achieve a high low-temperature output characteristic, a method for manufacturing the same, and a positive electrode active material in which the generation of soluble lithium is suppressed and a problem of gelation is not caused during the paste preparation. A positive electrode active material for non-aqueous electrolyte secondary batteries, including a lithium-metal composite oxide powder including a secondary particle configured by aggregating primary particles containing lithium, nickel, manganese, and cobalt, or a lithium-metal composite oxide powder including both the primary particles and the secondary particle. The secondary particle has a porous structure inside as a main inside structure, the slurry pH is 11.5 or less, the soluble lithium content rate is 0.5[% by mass] or less, the specific surface area is 3.0 to 4.0 [m.sup.2/g], and the porosity is more than 50 to 80[%].

The present invention provides a composite oxide that can achieve a high low-temperature output characteristic, a method for manufacturing the same, and a positive electrode active material in which the generation of soluble lithium is suppressed and a problem of gelation is not caused during the paste preparation. A positive electrode active material for non-aqueous electrolyte secondary batteries, including a lithium-metal composite oxide powder including a secondary particle configured by aggregating primary particles containing lithium, nickel, manganese, and cobalt, or a lithium-metal composite oxide powder including both the primary particles and the secondary particle. The secondary particle has a porous structure inside as a main inside structure, the slurry pH is 11.5 or less, the soluble lithium content rate is 0.5[% by mass] or less, the specific surface area is 3.0 to 4.0 [m.sup.2/g], and the porosity is more than 50 to 80[%].