Embodiments of the present invention provide an improved method and system for assessing non-uniformity of features in the measurement area (within the beam spot) on a semiconductor structure, (e.g. wafer), such as a non-uniform film thickness. The scattering from non-uniform features is modeled. Post-processing the residual of theoretical and collected spectra is performed to assess a measure of non-uniformity from within an incident spot beam of a spectrum acquisition tool.

Provided is a method for blending of agricultural product utilizing hyperspectral imaging. At least one region along a sample of agricultural product is scanned using at least one light source of different wavelengths. Hyperspectral images are generated from the at least one region. A spectral fingerprint for the sample of agricultural product is formed from the hyperspectral images. A plurality of samples of agricultural product is blended based on the spectral fingerprints of the samples according to parameters determined by executing a blending algorithm.

A method for photoluminescence measurement of a sample that includes a front face and a rear face linked by a contour, the sample resting, via the rear face of same, on a receiving face of an active base. The sample also includes a first region partially delimited by the contour and that emits a photoluminescence signal of an intensity, referred to as the first intensity, that is lower at any point to the average intensity of the photoluminescence signal of the sample referred to as the reference intensity, the active base emitting a photoluminescence signal of an intensity, referred to as the secondary intensity, that is at least equal to the reference intensity. The active base includes an edge that is set apart from the contour by an overlap distance and that delimits, with said contour, a peripheral section of the active base.

Inspection data that corresponds to potential defects of an object may be received. A first set of locations of first potential defects can be identified. The first set of locations of the first potential defects can be imaged with a review tool to obtain a first set of review images. The first potential defects can be classified based on the first set of review images to obtain first classification results of the first potential defects. A determination can be made as to whether an examination stopping criteria has been satisfied. In response to determining that the examination stopping criteria has not been satisfied, a second set of locations of second potential defects can be identified to be imaged with the review tool to obtain a second set of review images. The second set of locations can be different than the first set of locations.

Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.

Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.

A method of evaluating an insulated-gate semiconductor device having an insulated-gate structure including a channel formation layer made of a wide-bandgap semiconductor and a gate insulating film formed contacting the channel formation layer includes removing the gate insulating film in order to expose a surface of the channel formation layer; taking a phase image of the exposed surface of the channel formation layer using a phase mode of an atomic force microscope; evaluating a surface condition of the exposed surface of the channel formation layer by calculating an evaluation metric from phase shift values in the phase image and by determining whether the evaluation metric satisfies a prescribed condition; and determining that the insulated-gate semiconductor device is acceptable when the evaluation metric satisfied the prescribed condition.

Provided is a method for monitoring a manufacturing process of an agricultural product. The method utilizes hyperspectral imaging and comprises scanning at least one region along a sample of agricultural product using at least one light source of a single or different wavelengths; generating hyperspectral images from the at least one region; determining a spectral fingerprint for the sample of agricultural product from the hyperspectral images; and comparing the spectral fingerprint so obtained to a spectral fingerprint database containing a plurality of fingerprints obtained at various points of the manufacturing process, using a computer processor, to determine which point in the manufacturing process the sample has progressed to.

A method of identifying a wafer defect region is disclosed. The method includes preparing a sample wafer, forming a primary oxide film on the sample wafer at a temperature of 800 C. to 1000 C., forming a secondary oxide film on the primary oxide film at a temperature of 1000 C. to 1100 C., forming a tertiary oxide film on the secondary oxide film at a temperature of 1100 C. to 1200 C., removing the primary to tertiary oxide films, etching one surface of the sample wafer from which the primary to tertiary oxide films are removed to form haze on one surface of the sample wafer, and identifying a defect region of the sample wafer based on the haze.

A method for removing foreign matter from an agricultural product stream of a manufacturing process. The method includes conveying a product stream past an inspection station; scanning a region of the agricultural product stream as it passes the inspection station using at least one light source of a single or different wavelengths; generating hyperspectral images from the scanned region; determining a spectral fingerprint for the agricultural product stream from the hyperspectral images; comparing the spectral fingerprint obtained in step (c) to a spectral fingerprint database containing a plurality of fingerprints using a computer processor to determine whether foreign matter is present and, if present, generating a signal in response thereto; and removing a portion of the conveyed product stream in response to the signal. A system for detecting foreign matter within an agricultural product stream is also provided.