The present disclosure provides a sample analyzer and an analyzing method thereof. The sample analyzer includes a first beam source configured to provide a first energy beam to a sample, a second beam source configured to provide a second energy beam, which is different from the first energy beam, to the sample, a reflected beam sensor disposed between the second beam source and the sample to detect a reflected beam of the second energy beam, which is reflected by one side of the sample, and a transmitted beam sensor disposed adjacent to the other side of the sample to detect a transmitted beam of the second energy beam.

A method of evaluating crystallinity includes irradiating light from below a polycrystalline silicon substrate, allowing the irradiated light to pass through the polycrystalline silicon substrate and a circular polarizing plate disposed above the polycrystalline silicon substrate, measuring an intensity of light having passed through the circular polarizing plate at a location vertically above the circular polarizing plate, notifying that there is an error in a crystallinity of the polycrystalline silicon substrate when the measured intensity of the light is out of an error margin of a predetermined criterion intensity of light.

A polarimeter and a method of analyzing and imaging microstructural material orientation of a sample are disclosed. The polarimeter, which is a partial Mueller-matrix polarimeter (pMMP), accesses multiple independent polarization channels by employing two independent polarization modulators configured to switch serially among multiple independent settings, wherein the combination of the settings of the first and second polarization modulators defines an independent polarization channel, and wherein an imaging detector produces a set of spatially registered images that are synchronized with the channels formed by the polarization modulators; and wherein a processor connected with a memory executes a classification algorithm stored in the memory that maps the set of images to one or more material orientation images by mapping the set of values for each detector pixel corresponding to the set of spatially registered images to a value of material orientation at each pixel coordinate using a machine-learning model, an electrodynamic model, or a combination thereof. The invention can thereby create material microstructural orientation images of diverse anisotropic materials, for instance polymer domains, fiber bundles or plys, and metallic crystalline grains.

A protein crystallization trial is automatically analyzed by capturing images of the protein drops in the trial. A machine-learned model, such as a neural network, is applied to classify the images. The model generates a predicted classification from among a set of possible classifications which includes one or more crystal type classifications and one or more non-crystal type classifications. Users may be notified automatically of newly identified crystals (e.g., drops that are classified as a crystal type). The notification may include a link to a user interface that includes results of the trial.

A method of identifying a wafer defect region is disclosed. The method includes preparing a sample wafer, forming a primary oxide film on the sample wafer at a temperature of 800 C. to 1000 C., forming a secondary oxide film on the primary oxide film at a temperature of 1000 C. to 1100 C., forming a tertiary oxide film on the secondary oxide film at a temperature of 1100 C. to 1200 C., removing the primary to tertiary oxide films, etching one surface of the sample wafer from which the primary to tertiary oxide films are removed to form haze on one surface of the sample wafer, and identifying a defect region of the sample wafer based on the haze.

An experiment system and method for accurate controlling of macromolecular crystallization process. The system has a platform-equipped horizontal moving slot and channel dedicated backwash module, a droplet adding control module, an observing module, a user observation computer system, and an experimental condition control module. A high-precision movement knob of the x-axis platform and the y-axis platform of the system and the accurate position control of a syringe needle are used to ensure that the macromolecular solution can be added into the correct positions of convex or concave. The crystallization induction period of the target crystal faun is determined by the real-time data of the high-speed microcamera, and the crystal cultivation environment is adjusted in real time. This is simple and easy to operate, high in productivity, can be applied to the conventional experimental replication.

A manufacturing method of a group-III nitride laminate includes: preparing a group-III nitride laminate having a group-III nitride substrate and a group-III nitride epitaxial layer formed above a main surface of the group-III nitride substrate; and conducting photoluminescence mapping measurement at a plurality of measurement positions on the group-III nitride epitaxial layer, where a magnitude of an off-angle is different, the off-angle being formed by a normal direction of the main surface of the group-III nitride substrate and c-axis direction, to obtain a relative yellow intensity which is a rate of a yellow emission intensity to a band edge emission intensity, and obtain a correspondence relationship between a magnitude of the off-angle and the relative yellow intensity.

The invention discloses a crystal purity detecting apparatus, including a machine body, wherein the detecting body is provided with a detecting chamber, and a detecting device is arranged in the detecting chamber, and a symmetric power chamber is arranged in the inner wall of the left and right sides of the detecting chamber. The detecting chamber is provided with a lifting device, the power chamber is provided with a transmission device, and the power chamber is provided with a power device; the invention has the advantages of simple structure, convenient operation and convenient maintenance, and the device can perform various positions on the crystal the detection, the accuracy of the device judgment is high, and the labor intensity of the professional is lowered, so the device has high use and promotion value.

A facet region detecting method for detecting a facet region of an SiC single crystal ingot includes: an irradiation step of irradiating a first surface of the SiC single crystal ingot with light; a fluorescence intensity detection step of detecting the intensity of fluorescence generated from the first surface of the SiC single crystal ingot by the light; and a determination step of determining a region of the first surface where the fluorescence intensity is comparatively low as a facet region and determining a region where the fluorescence intensity is comparatively high as a non-facet region.

A crystal orientation detecting apparatus for detecting a crystal orientation of a nonlinear optical crystal substrate includes a laser beam applying unit applying a linearly polarized laser beam to a surface of the nonlinear optical crystal substrate, a harmonic detecting unit detecting a harmonic produced from the nonlinear optical crystal substrate due to a nonlinear optical effect, a recording unit recording the relationship between the angular displacement through which the plane of polarization of the laser beam and the nonlinear optical crystal substrate are rotated relatively to each other, and the intensity of the harmonic, and a crystal orientation detecting unit detecting the crystal orientation of the nonlinear optical crystal substrate based on the recorded relationship.