A method for accurately characterizing a crystal three-dimensional orientation and a crystallographic orientation, including the following steps: acquiring a two-dimensional structure topography and an EBSD pattern in an area to-be-detected of a crystal material; using three-dimensional image analysis software to perform three-dimensional image synthesis through so as to obtain a three-dimensional topography; extracting a three-dimensional orientation of a characteristic topography in a coordinate system where the three-dimensional topography is located; and by converting the three-dimensional orientation into a crystallographic coordinate system obtained by EBSD, obtaining the crystallographic orientation of the characteristic topography. By using the method, the orientation of characteristic organization structures of various materials and the crystallographic orientation may be simultaneously analyzed, which has a great significance for research on the material crystal growth orientation and growth behavior.

Crystallographic information of crystalline sample can be determined from one or more three-dimensional diffraction pattern datasets generated based on diffraction patterns collected from multiple crystals. The crystals for diffraction pattern acquisition may be selected based on a sample image. At a location of each selected crystal, multiple diffraction patterns of the crystal are acquired at different angles of incidence by tilting the electron beam, wherein the sample is not rotated while the electron beam is directed at the selected crystal.

Crystallographic information of crystalline sample can be determined from one or more three-dimensional diffraction pattern datasets generated based on diffraction patterns collected from multiple crystals. The crystals for diffraction pattern acquisition may be selected based on a sample image. At a location of each selected crystal, multiple diffraction patterns of the crystal are acquired at different angles of incidence by tilting the electron beam, wherein the sample is not rotated while the electron beam is directed at the selected crystal.

A method for improving the quality/integrity of an EBSD/TKD map, wherein each data point is assigned to a corresponding grid point of a sample grid and represents crystal information based on a Kikuchi pattern detected for the grid point; comprising determining a defective data point of the EBSD/TKD map and a plurality of non-defective neighboring data points, comparing the position of Kikuchi bands of a Kikuchi pattern detected for a grid point corresponding to the defective data point with the positions of bands in at least one simulated Kikuchi pattern corresponding to crystal information of the neighboring data points and assigning the defective data point the crystal information of one of the plurality of neighboring data point based on the comparison.

A method for improving the quality/integrity of an EBSD/TKD map, wherein each data point is assigned to a corresponding grid point of a sample grid and represents crystal information based on a Kikuchi pattern detected for the grid point; comprising determining a defective data point of the EBSD/TKD map and a plurality of non-defective neighboring data points, comparing the position of Kikuchi bands of a Kikuchi pattern detected for a grid point corresponding to the defective data point with the positions of bands in at least one simulated Kikuchi pattern corresponding to crystal information of the neighboring data points and assigning the defective data point the crystal information of one of the plurality of neighboring data point based on the comparison.

A method of optimizing laser welding of two different metals is disclosed herein. In some embodiments, a method for optimizing laser welding of two different metals comprising laser welding a plurality of samples comprising a first metal and a second metal to form a weld between the first metal and the second metal, the weld having a molten area, wherein each sample is laser welded using a different line energy, measuring the content of an intermetallic compound produced by the laser welding in the molten area of the weld in each sample, and determining the line energy of the laser that results in the content of the intermetallic compound produced in the molten area of the weld being less than 10%.

A method of optimizing laser welding of two different metals is disclosed herein. In some embodiments, a method for optimizing laser welding of two different metals comprising laser welding a plurality of samples comprising a first metal and a second metal to form a weld between the first metal and the second metal, the weld having a molten area, wherein each sample is laser welded using a different line energy, measuring the content of an intermetallic compound produced by the laser welding in the molten area of the weld in each sample, and determining the line energy of the laser that results in the content of the intermetallic compound produced in the molten area of the weld being less than 10%.

A sample preparation method includes disposing a microcrystal on an electrically conductive grid, coating the microcrystal with an electrically conductive material to yield a coated microcrystal, milling the coated microcrystal with a first ion beam to yield a milled microcrystal, and polishing the milled microcrystal with a second ion beam to yield a polished microcrystal. A length of a side of the milled microcrystal is between about 250 nm and about 500 nm, and a length of the corresponding side of the polished microcrystal is between about 150 nm and about 250 nm. Assessing the crystal structure of the polished microcrystal includes rotating the polished microcrystal while accelerating electrons toward the polished microcrystal, diffracting the electrons from the polished microcrystal to yield a multiplicity of diffraction patterns, and assessing, from the multiplicity of diffraction patterns, the crystal structure of the polished microcrystal.

A sample preparation method includes disposing a microcrystal on an electrically conductive grid, coating the microcrystal with an electrically conductive material to yield a coated microcrystal, milling the coated microcrystal with a first ion beam to yield a milled microcrystal, and polishing the milled microcrystal with a second ion beam to yield a polished microcrystal. A length of a side of the milled microcrystal is between about 250 nm and about 500 nm, and a length of the corresponding side of the polished microcrystal is between about 150 nm and about 250 nm. Assessing the crystal structure of the polished microcrystal includes rotating the polished microcrystal while accelerating electrons toward the polished microcrystal, diffracting the electrons from the polished microcrystal to yield a multiplicity of diffraction patterns, and assessing, from the multiplicity of diffraction patterns, the crystal structure of the polished microcrystal.

A method for accurately characterizing a crystal three-dimensional orientation and a crystallographic orientation, including the following steps: acquiring a two-dimensional structure topography and an EBSD pattern in an area to-be-detected of a crystal material; using three-dimensional image analysis software to perform three-dimensional image synthesis through so as to obtain a three-dimensional topography; extracting a three-dimensional orientation of a characteristic topography in a coordinate system where the three-dimensional topography is located; and by converting the three-dimensional orientation into a crystallographic coordinate system obtained by EBSD, obtaining the crystallographic orientation of the characteristic topography. By using the method, the orientation of characteristic organization structures of various materials and the crystallographic orientation may be simultaneously analyzed, which has a great significance for research on the material crystal growth orientation and growth behavior.