Various methods and systems are provided for acquiring electron backscatter diffraction patterns. In one example, a first scan is performed by directing a charged particle beam towards multiple impact points within a ROI and detecting particles scattered from the multiple impact points. A signal quality of each impact point of the multiple impact points is calculated based on the detected particles. A signal quality of the ROI is calculated based on the signal quality of each impact point. Responsive to the signal quality of the ROI lower than a threshold signal quality, a second scan of the ROI is performed. A structural image of the sample may be formed based on detected particles from both the first scan and the second scan.

Various methods and systems are provided for acquiring electron backscatter diffraction patterns. In one example, a first scan is performed by directing a charged particle beam towards multiple impact points within a ROI and detecting particles scattered from the multiple impact points. A signal quality of each impact point of the multiple impact points is calculated based on the detected particles. A signal quality of the ROI is calculated based on the signal quality of each impact point. Responsive to the signal quality of the ROI lower than a threshold signal quality, a second scan of the ROI is performed. A structural image of the sample may be formed based on detected particles from both the first scan and the second scan.

There is provided a tilting parameters calculating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample mounted on a sample stage, the tilting parameters calculating device being configured to calculate tilting parameters, the tilting parameters being input parameters to control a tilting direction and a tilting value of the sample and/or the charged particle beam, the input parameters being necessary to change an incident direction of the charged particle beam with respect to the sample, the tilting parameters calculating device including a tilting parameters calculating unit for calculating the tilting parameters based on information that indicates the incident direction of the charged particle beam with respect to a crystal lying at a selected position on the surface in a state where the incident direction of the charged particle beam with respect to the sample is in a predetermined incident direction, the information being designated on a crystal orientation figure, which is a diagram illustrating the incident direction of the charged particle beam with respect to a crystal coordinate system of the crystal.

An electron diffraction imaging system for imaging the three-dimensional structure of a single target molecule of a sample uses an electron source that emits a beam of electrons toward the sample, and a two-dimensional detector that detects electrons diffracted by the sample and generates an output indicative of their spatial distribution. A sample support is transparent to electrons in a region in which the sample is located, and is rotatable and translatable in at least two perpendicular directions. The electron beam has an operating energy between 5 keV and 30 keV, and beam optics block highly divergent electrons to limit the beam diameter to no more than three times the size of the sample molecule and provide a lateral coherence length of at least 15 nm. An adjustment system adjusts the sample support position in response to the detector output to center the target molecule in the beam.

The system includes a photocathode electron source, diffractive optical element, and a microlens array to focus the beamlets. A source directs a radiation beam to the diffractive optical element, which produces a beamlet array to be used in combination with a photocathode surface to generate an array of electron beams from the beamlets.

The system includes a photocathode electron source, diffractive optical element, and a microlens array to focus the beamlets. A source directs a radiation beam to the diffractive optical element, which produces a beamlet array to be used in combination with a photocathode surface to generate an array of electron beams from the beamlets.

The system includes a photocathode electron source, diffractive optical element, and a microlens array to focus the beamlets. A source directs a radiation beam to the diffractive optical element, which produces a beamlet array to be used in combination with a photocathode surface to generate an array of electron beams from the beamlets.

The system includes a photocathode electron source, diffractive optical element, and a microlens array to focus the beamlets. A source directs a radiation beam to the diffractive optical element, which produces a beamlet array to be used in combination with a photocathode surface to generate an array of electron beams from the beamlets.

A system of analyzing a crystal defect includes an image processor, an image generator, and a comparator. The image processor processes a measured transmission electron microscope (TEM) image that is provided by capturing an image of a specimen having a crystal structure, to provide structural defect information of the specimen. The image generator provides a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure. The comparator compares the measured TEM image with the plurality of virtual TEM images using the structural defect information to determine a defect type of the measured TEM image.

A system of analyzing a crystal defect includes an image processor, an image generator, and a comparator. The image processor processes a measured transmission electron microscope (TEM) image that is provided by capturing an image of a specimen having a crystal structure, to provide structural defect information of the specimen. The image generator provides a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure. The comparator compares the measured TEM image with the plurality of virtual TEM images using the structural defect information to determine a defect type of the measured TEM image.