A data processing apparatus according to an embodiment includes acquisition circuitry and specification circuitry. The acquisition circuitry is configured to acquire a detector signal containing a first component that is based on Cherenkov light and a second component that is based on scintillation light. The specification circuitry is configured to specify timing information about generation of the detector signal by curve fitting to the first component.

The present disclosure includes a core sample analysis system that includes a portable sampling device configured to be positioned adjacent to a subsurface core sample. The portable sampling device includes a first module that includes a radiation source. Also, the portable sampling device includes a second module that includes a detector that is configured to detect radiation emitted from the radiation source that reflects off of the subsurface core sample.

The present disclosure includes a core sample analysis system that includes a portable sampling device configured to be positioned adjacent to a subsurface core sample. The portable sampling device includes a first module that includes a radiation source. Also, the portable sampling device includes a second module that includes a detector that is configured to detect radiation emitted from the radiation source that reflects off of the subsurface core sample.

The present invention concerns a device, system and method of use of a multi-capture Compton camera, characterised by the use of at least two capture centres having separate positions.

The present invention concerns a device, system and method of use of a multi-capture Compton camera, characterised by the use of at least two capture centres having separate positions.

Various aspects include methods compensating for Compton scattering effects in pixel radiation detectors. Various aspects may include determining whether gamma ray detection events occurred in two or more detector pixels within an event frame, determining whether the detection events occurred in detector pixels within a threshold distance of each other in response to determining that detection events occurred in two or more detector pixels within the event frame, and recording the two or more detection events as a single detection event having an energy equal to the sum of the measured energies of the two or more detection events located in the detector pixel having a highest measured energy in response to determining that the detection events occurred in detector pixels within the threshold distance of each other.

Various aspects include methods compensating for Compton scattering effects in pixel radiation detectors. Various aspects may include determining whether gamma ray detection events occurred in two or more detector pixels within an event frame, determining whether the detection events occurred in detector pixels within a threshold distance of each other in response to determining that detection events occurred in two or more detector pixels within the event frame, and recording the two or more detection events as a single detection event having an energy equal to the sum of the measured energies of the two or more detection events located in the detector pixel having a highest measured energy in response to determining that the detection events occurred in detector pixels within the threshold distance of each other.

A gamma-ray image acquisition device (1) acquires the direction and energy of a target scattered gamma-ray generated by Compton scattering of an incident gamma-ray and acquires the direction and energy of a recoil electron. These pieces of information are used to acquire the incident direction and energy of the incident gamma-ray. The gamma-ray image acquisition device (1) acquires a two-dimensional image by imaging spectroscopy based on the incident directions and energies of a plurality of incident gamma-rays, the two-dimensional image being an image in which each pixel corresponding to each incident direction includes energy distribution information. In the two-dimensional image, the area and the solid angle of an imaging range are proportional to each other. This enables acquiring the distribution of gamma-ray intensities without depending on distance and thereby acquiring an image that indicates more useful information than conventional images.

A gamma-ray image acquisition device (1) acquires the direction and energy of a target scattered gamma-ray generated by Compton scattering of an incident gamma-ray and acquires the direction and energy of a recoil electron. These pieces of information are used to acquire the incident direction and energy of the incident gamma-ray. The gamma-ray image acquisition device (1) acquires a two-dimensional image by imaging spectroscopy based on the incident directions and energies of a plurality of incident gamma-rays, the two-dimensional image being an image in which each pixel corresponding to each incident direction includes energy distribution information. In the two-dimensional image, the area and the solid angle of an imaging range are proportional to each other. This enables acquiring the distribution of gamma-ray intensities without depending on distance and thereby acquiring an image that indicates more useful information than conventional images.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.