The present disclosure provides a mobile back scattering imaging security inspection apparatus, comprising: a back scattering scanner (2), a detector (3), a controller (4), and a movable stage (1) configured to carry the back scattering scanner, the detector and the controller and being movable with respect to the object to be inspected; wherein the back scattering scanner is a distributed X-ray source comprising a plurality of target points (201), each of which is able to emit the ray beam individually, and wherein the back scattering scanner, the detector and the controller perform an imaging security inspection operation on the object to be inspected during moving along with the movable stage with respect to the object.

Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.

Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.

The disclosure provides an apparatus for aligning first and second plates that are parallel to each other and have the same orientation. The apparatus includes a detector that detects composite small-angle X-ray scattering emitted from patterns of the first and second plates that are perpendicularly impinged by X-ray, and a moving unit that aligns the first and second plates according to a composite amplitude distribution of the composite small-angle X-ray scattering. Therefore, the first and second plates are aligned to each other accurately.

According to an aspect of the present invention, provided is an information processing apparatus comprising a memory configured to store a program; and a processor configured to execute a program so as to output a parameter result in relation to a thin film by inputting a profile result in relation to an intensity of X-ray from the thin film to a neural network, wherein the neural network is a neural network that is allowed to machine-learn teacher data using profile data in relation to an intensity of X-ray from a thin film as input data and using parameter data in relation to the thin film as output data.

Electron density map specifying circuitry is configured to accurately reproduce an electron density map of a macromolecule in a solution having a dynamically fluctuating structure. For example, the electron density map circuitry generates a plurality of electron density maps from a measured X-ray scattering profile acquired by measuring a sample, calculates an index representing a degree of coincidence between an X-ray scattering profile calculated from each of the plurality of electron density maps and the measured X-ray scattering profile, and selects a representative electron density map from the plurality of electron density maps based on the calculated index.

The present invention provides a method of generating a fingerprint for a gemstone (5), for example a diamond, using x-ray imaging. The fingerprint comprises a three-dimensional map of a crystal or crystals present within the gemstone (5) including internal imperfections of the crystals and may also comprise further information about the gemstone (5). The method comprising the steps of: mounting the gemstone (5) in a sample holder (4) of an imaging apparatus, the imaging apparatus comprising a detector (6), a sample holder (4) mounted on a sample stage (3), an x-ray source (1), the sample holder (4) and the x-ray source (1) aligned along an optical axis, wherein the sample holder (4) is movable relative to the at least one x-ray source (1) and the detector (6); exposing the gemstone (5) to x-ray radiation from the x-ray source (1), whilst moving the sample holder (4) according to a search strategy that is predetermined for the gemstone (5) based on known physical characteristics of the gemstone (5); using the detector (6) to locate diffraction and/or extinction spots generated by the lattice of the crystals; utilising the located diffraction and/or extinction spots to calculate information about the position, orientation, and phase of the crystals; generating a suitable x-ray diffraction scanning strategy from the calculated information, the strategy including moving the sample holder (4) relative to the x-ray source (1) and the detector (6) and exposing the gemstone (5) to appropriate x-ray radiation as the sample holder (4) is moved, wherein the strategy is generated to locate and classify internal imperfections in the at least one crystal; scanning the gemstone according to the scanning strategy and recording the diffraction and/or extinction images using the detector (6); and generating a fingerprint from the recorded diffraction and/or extinction images.

An object of the present invention is to provide a core/shell type quantum dot material capable of increasing the photoluminescence quantum yield and a method of manufacturing the same. The quantum dot material according to one embodiment of the present invention is a quantum dot material comprising a plurality of nanoscopic core-shell structures, each nanoscopic core-shell structure including a nanocrystalline core including phosphorus and indium, a shell disposed on the nanocrystalline core, and a modifier comprising at least one of chlorine and bromine, wherein the content of chlorine and/or bromine is within a range of 2 to 15 mass % of the quantum dot material.

Methods and systems for reducing the effect of finite source size on illumination beam spot size for Transmission, Small-Angle X-ray Scatterometry (T-SAXS) measurements are described herein. A beam shaping slit having a slender profile is located in close proximity to the specimen under measurement and does not interfere with wafer stage components over the full range of angles of beam incidence. In one embodiment, four independently actuated beam shaping slits are employed to effectively block a portion of an incoming x-ray beam and generate an output beam having a box shaped illumination cross-section. In one aspect, each of the beam shaping slits is located at a different distance from the specimen in a direction aligned with the beam axis. In another aspect, the beam shaping slits are configured to rotate about the beam axis in coordination with the orientation of the specimen.

Methods and systems for reducing the effect of finite source size on illumination beam spot size for Transmission, Small-Angle X-ray Scatterometry (T-SAXS) measurements are described herein. A beam shaping slit having a slender profile is located in close proximity to the specimen under measurement and does not interfere with wafer stage components over the full range of angles of beam incidence. In one embodiment, four independently actuated beam shaping slits are employed to effectively block a portion of an incoming x-ray beam and generate an output beam having a box shaped illumination cross-section. In one aspect, each of the beam shaping slits is located at a different distance from the specimen in a direction aligned with the beam axis. In another aspect, the beam shaping slits are configured to rotate about the beam axis in coordination with the orientation of the specimen.