A transmission type small-angle scattering device of the present invention includes a goniometer 10 including a rotation arm 11. The rotation arm 11 is freely turnable around a θ-axis extending in a horizontal direction from an origin with a vertical arrangement state of the rotation arm being defined as the origin, and has a vertical arrangement structure in which an X-ray irradiation unit 20 is installed on a lower-side end portion of the rotation arm 11, and a two-dimensional X-ray detector 30 is installed on an upper-side end portion of the rotation arm 11 to form a vertical arrangement structure.

An object of the present invention is to provide a core/shell type quantum dot material capable of increasing the photoluminescence quantum yield and a method of manufacturing the same. The quantum dot material according to one embodiment of the present invention is a quantum dot material comprising a plurality of nanoscopic core-shell structures, each nanoscopic core-shell structure including a nanocrystalline core including phosphorus and indium, a shell disposed on the nanocrystalline core, and a modifier comprising at least one of chlorine and bromine, wherein the content of chlorine and/or bromine is within a range of 2 to 15 mass % of the quantum dot material.

A state change tracking device includes: a hardware processor that non-destructively tracks a state change of an inspection target by a plurality of reconstructed images acquired by imaging the inspection target placed under a specific environment by an X-ray Talbot imaging device over time.

A state change tracking device includes: a hardware processor that non-destructively tracks a state change of an inspection target by a plurality of reconstructed images acquired by imaging the inspection target placed under a specific environment by an X-ray Talbot imaging device over time.

Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

The present invention relates to a system (10) for X-ray dark field, phase contrast and attenuation tomosynthesis image acquisition. The system comprises an X-ray source (20), an interferometer arrangement (30), an X-ray detector (40), a control unit (50), and an output unit. A first axis is defined extending from a centre of the X-ray source to a centre of the X-ray detector. An examination region is located between the X-ray source and the X-ray. The first axis extends through the examination region, and the examination region is configured to enable location of an objection to be examined. The interferometer arrangement is located between the X-ray source and the X-ray detector. The interferometer arrangement comprises a first grating (32) and a second grating (34). A second axis is defined that is perpendicular to a plane that is defined with respect to a centre of the first grating and/or a centre of the second grating. The control unit is configured to control movement of the X-ray source and/or movement of the X-ray detector to provide a plurality of image acquisition states, wherein the X-ray source and X-ray detector are configured to operate to acquire image data. For each of the plurality of image acquisition states the first axis extends through the examination region at a different angle. The control unit is configured to control movement of the first grating or movement of the second grating in a lateral position direction perpendicular to the second axis. For each of the acquisition states the first grating or second grating is at a different lateral position of a plurality of lateral positions. The output unit is configured to output one or more of: dark field image data, phase contrast image data, and attenuation image data.

Disclosed is a characterization method of closed pores and connectivity of coal measure composite reservoirs, including collecting samples of coal seams and shales reservoirs, carrying out low-field NMR experiments and NMR freeze-thaw experiments on plunger samples and crushed samples with different particle sizes to obtain cumulative pore volume distribution and differential pore size distribution of the crushed samples, comparing crushed samples with plunger samples for optimal crushed particle sizes, and preliminarily determining a distribution range of closed pores; carrying out SAXS experiments on crushed samples to obtain size distribution and volume of total pores of 1-100 nanometers; calculating pore volume of total pores and closed pore volume in composite reservoirs by low-field NMR experiments results; carrying out non-steady overburden permeability experiments and variable factors on plunger samples of coal seams, shales and tight sandstone to characterize the connectivity under influence of pores development and lithologic combinations.

Disclosed is a characterization method of closed pores and connectivity of coal measure composite reservoirs, including collecting samples of coal seams and shales reservoirs, carrying out low-field NMR experiments and NMR freeze-thaw experiments on plunger samples and crushed samples with different particle sizes to obtain cumulative pore volume distribution and differential pore size distribution of the crushed samples, comparing crushed samples with plunger samples for optimal crushed particle sizes, and preliminarily determining a distribution range of closed pores; carrying out SAXS experiments on crushed samples to obtain size distribution and volume of total pores of 1-100 nanometers; calculating pore volume of total pores and closed pore volume in composite reservoirs by low-field NMR experiments results; carrying out non-steady overburden permeability experiments and variable factors on plunger samples of coal seams, shales and tight sandstone to characterize the connectivity under influence of pores development and lithologic combinations.

Methods and systems for improved monitoring of tool drift and tool-to-tool matching across large fleets of measurement systems employed to measure semiconductor structures are presented herein. One or more Quality Control (QC) wafers are measured by each of a fleet of measurement systems. Values of system variables are extracted from the QC measurement data associated with each measurement system using a trained QC encoder. The extracted values of the system variables are employed to condition the corresponding measurement model employed by each measurement tool to characterize structures under measurement having unknown values of one or more parameters of interest. Accurate tool-to-tool matching across a fleet of conditioned measurement systems is achieved by extracting values of system variables from measurement data collected from the same set of QC wafers. Tool health is monitored based on changes in values of system variables extracted from measurements performed at different times.