The invention relates to method and system configured for material analysis and mineralogy. At least one image based on first emission from a sample is provided. First spectra of the sample based on second emissions from the second scan locations of the image are provided. A confidence score is calculated for every first spectrum, and second scan location(s) with confidence score(s) below a threshold value are selected. Second emissions from the selected second scan location(s) are acquired to provide new image and determine new second scan locations within the respective new image.

The invention relates to method and system configured for material analysis and mineralogy. At least one image based on first emission from a sample is provided. First spectra of the sample based on second emissions from the second scan locations of the image are provided. A confidence score is calculated for every first spectrum, and second scan location(s) with confidence score(s) below a threshold value are selected. Second emissions from the selected second scan location(s) are acquired to provide new image and determine new second scan locations within the respective new image.

Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

The present specification describes a compact, hand-held probe or device that uses the principle of X-ray backscatter to provide immediate feedback to an operator about the presence of scattering and absorbing materials, items or objects behind concealing barriers irradiated by ionizing radiation, such as X-rays. Feedback is provided in the form of a changing audible tone whereby the pitch or frequency of the tone varies depending on the type of scattering material, item or object. Additionally or alternatively, the operator obtains a visual scan image on a screen by scanning the beam around a suspect area or anomaly.

The present specification describes a compact, hand-held probe or device that uses the principle of X-ray backscatter to provide immediate feedback to an operator about the presence of scattering and absorbing materials, items or objects behind concealing barriers irradiated by ionizing radiation, such as X-rays. Feedback is provided in the form of a changing audible tone whereby the pitch or frequency of the tone varies depending on the type of scattering material, item or object. Additionally or alternatively, the operator obtains a visual scan image on a screen by scanning the beam around a suspect area or anomaly.

Systems and methods related to the use of a proton/deuteron cyclotron for materials analysis and other industrial applications are provided. The methods, apparatuses and uses include positioning a target material for irradiation on a sample holder, focusing a hydrogen ion beam or a deuteron ion beam, such as a negative hydrogen ion or negative deuteron ion beam, from the cyclotron to the target material, irradiating the target material to induce a (d,*) or a (p,*) reaction thereby producing a radiation emission, and detecting the radiation emission using a detector, wherein the particle beam produced by the cyclotron has an energy in a range of from and including 1 MeV to 3 MeV and has a beam current in a range of from and including 5 pA to 100 nA.

Systems and methods related to the use of a proton/deuteron cyclotron for materials analysis and other industrial applications are provided. The methods, apparatuses and uses include positioning a target material for irradiation on a sample holder, focusing a hydrogen ion beam or a deuteron ion beam, such as a negative hydrogen ion or negative deuteron ion beam, from the cyclotron to the target material, irradiating the target material to induce a (d,*) or a (p,*) reaction thereby producing a radiation emission, and detecting the radiation emission using a detector, wherein the particle beam produced by the cyclotron has an energy in a range of from and including 1 MeV to 3 MeV and has a beam current in a range of from and including 5 pA to 100 nA.

Inspection systems employing radiation filters with different attenuation characteristics to determine specimen irregularities, and related methods are disclosed. An inspection system includes a radiation emitter configured to emit a radiation beam along a radiation trajectory. Some of the radiation may be reflected by the specimen as backscatter and received by at least one radiation detector of the inspection system along the radiation trajectory. Irregularities and various materials of the specimen may produce backscatter radiation at different energies and/or scatter angles which may be identified by employing radiation filters having different attenuation characteristics. By employing these filters in communication with the radiation emitter and the radiation detector, the backscatter radiation passed through the filters may be measured and integrated at different positions of the radiation beam to produce a composite image of the specimen. In this manner, irregularities and associated materials within the specimen may be more easily identified.

Inspection systems employing radiation filters with different attenuation characteristics to determine specimen irregularities, and related methods are disclosed. An inspection system includes a radiation emitter configured to emit a radiation beam along a radiation trajectory. Some of the radiation may be reflected by the specimen as backscatter and received by at least one radiation detector of the inspection system along the radiation trajectory. Irregularities and various materials of the specimen may produce backscatter radiation at different energies and/or scatter angles which may be identified by employing radiation filters having different attenuation characteristics. By employing these filters in communication with the radiation emitter and the radiation detector, the backscatter radiation passed through the filters may be measured and integrated at different positions of the radiation beam to produce a composite image of the specimen. In this manner, irregularities and associated materials within the specimen may be more easily identified.