The fingerprint comprises a three-dimensional map of internal imperfections present in a crystal within the gemstone (5), and may also comprise further information about the gemstone (5). The method comprises scanning the gemstone in an imaging apparatus by recording diffraction and/or extinction images according to a scanning strategy, and generating a fingerprint from the recorded diffraction and/or extinction images. The imaging apparatus comprises a sample holder (4), a sample stage (3), a detector (6), an x-ray source (1), wherein the sample holder (4) is movable relative to the x-ray source (1) and the detector (6). The fingerprint is used for the identification of gemstones, and/or for tracking and/or processing of gemstones in a supply chain.

The fingerprint comprises a three-dimensional map of internal imperfections present in a crystal within the gemstone (5), and may also comprise further information about the gemstone (5). The method comprises scanning the gemstone in an imaging apparatus by recording diffraction and/or extinction images according to a scanning strategy, and generating a fingerprint from the recorded diffraction and/or extinction images. The imaging apparatus comprises a sample holder (4), a sample stage (3), a detector (6), an x-ray source (1), wherein the sample holder (4) is movable relative to the x-ray source (1) and the detector (6). The fingerprint is used for the identification of gemstones, and/or for tracking and/or processing of gemstones in a supply chain.

Methods and systems for positioning a specimen and characterizing an x-ray beam incident onto the specimen in a Transmission, Small-Angle X-ray Scatterometry (T-SAXS) metrology system are described herein. A specimen positioning system locates a wafer vertically and actively positions the wafer in six degrees of freedom with respect to the x-ray illumination beam without attenuating the transmitted radiation. In some embodiments, a cylindrically shaped occlusion element is scanned across the illumination beam while the detected intensity of the transmitted flux is measured to precisely locate the beam center. In some other embodiments, a periodic calibration target is employed to precisely locate the beam center. The periodic calibration target includes one or more spatially defined zones having different periodic structures that diffract X-ray illumination light into distinct, measurable diffraction patterns.

Methods and systems for positioning a specimen and characterizing an x-ray beam incident onto the specimen in a Transmission, Small-Angle X-ray Scatterometry (T-SAXS) metrology system are described herein. A specimen positioning system locates a wafer vertically and actively positions the wafer in six degrees of freedom with respect to the x-ray illumination beam without attenuating the transmitted radiation. In some embodiments, a cylindrically shaped occlusion element is scanned across the illumination beam while the detected intensity of the transmitted flux is measured to precisely locate the beam center. In some other embodiments, a periodic calibration target is employed to precisely locate the beam center. The periodic calibration target includes one or more spatially defined zones having different periodic structures that diffract X-ray illumination light into distinct, measurable diffraction patterns.

The embodiments of the present disclosure provide a photoelectric detector, a method for manufacturing the photoelectric detector, and a detection device. The method for manufacturing the photoelectric detector includes: forming a thin film transistor array layer on a base substrate; forming an organic layer on a side of the thin film transistor array layer facing away from the base substrate; and patterning the organic layer to form a first via hole which enables a signal transmission layer in the thin film transistor array layer to be exposed; and depositing a photoelectric conversion device in the first via hole.

The embodiments of the present disclosure provide a photoelectric detector, a method for manufacturing the photoelectric detector, and a detection device. The method for manufacturing the photoelectric detector includes: forming a thin film transistor array layer on a base substrate; forming an organic layer on a side of the thin film transistor array layer facing away from the base substrate; and patterning the organic layer to form a first via hole which enables a signal transmission layer in the thin film transistor array layer to be exposed; and depositing a photoelectric conversion device in the first via hole.

A method of detecting an anomaly in a crystallographic structure, the method comprising: illuminating the structure with x-ray radiation in a known direction relative to the crystallographic orientation; positioning the structure such that its crystallographic orientation is known; detecting a pattern of the diffracted x-ray radiation transmitted through the structure; generating the simulated pattern based on the known direction relative to the crystallographic orientation; comparing the detected pattern to a simulated pattern for x-ray radiation illuminating in the known direction; and, detecting the anomaly in the crystallographic structure based on the comparison.

A method of detecting an anomaly in a crystallographic structure, the method comprising: illuminating the structure with x-ray radiation in a known direction relative to the crystallographic orientation; positioning the structure such that its crystallographic orientation is known; detecting a pattern of the diffracted x-ray radiation transmitted through the structure; generating the simulated pattern based on the known direction relative to the crystallographic orientation; comparing the detected pattern to a simulated pattern for x-ray radiation illuminating in the known direction; and, detecting the anomaly in the crystallographic structure based on the comparison.

An x-ray mirror optic includes a plurality of surface segments with quadric cross-sections having differing quadric parameters. The quadric cross-sections of the surface segments share a common axis and are configured to reflect x-rays in a plurality of reflections along a single optical axis or in a scattering plane defined as containing an incident x-ray and a corresponding reflected x-ray.

An x-ray mirror optic includes a plurality of surface segments with quadric cross-sections having differing quadric parameters. The quadric cross-sections of the surface segments share a common axis and are configured to reflect x-rays in a plurality of reflections along a single optical axis or in a scattering plane defined as containing an incident x-ray and a corresponding reflected x-ray.