Provided are a processing method, a processing apparatus and a processing program which can perform pole figure measurement continuously without overlapping of an angle a in a pole figure with the small number of times of scan, thereby enabling the efficient measurement. The processing method for determining conditions of pole figure measurement by X-ray diffraction, includes the steps of. receiving input of a diffraction angle 2; and determining an angle formed by an incident X-ray and an x-axis, and a tilt angle of a sample in each scan for a rotation angle within a sample plane so as to make a range of an angle a continuous from =90 to =0 without overlapping, the angle being formed by the sample plane and a scattering vector, the range of the angle are detectable at a time on a two-dimensional detection plane in the pole figure measurement at the diffraction angle 2, in which determining the angle and the tilt angle is repeated.

Provided are a processing method, a processing apparatus and a processing program which can perform pole figure measurement continuously without overlapping of an angle a in a pole figure with the small number of times of scan, thereby enabling the efficient measurement. The processing method for determining conditions of pole figure measurement by X-ray diffraction, includes the steps of. receiving input of a diffraction angle 2; and determining an angle formed by an incident X-ray and an x-axis, and a tilt angle of a sample in each scan for a rotation angle within a sample plane so as to make a range of an angle a continuous from =90 to =0 without overlapping, the angle being formed by the sample plane and a scattering vector, the range of the angle are detectable at a time on a two-dimensional detection plane in the pole figure measurement at the diffraction angle 2, in which determining the angle and the tilt angle is repeated.

Molecular structure may be determined based on structure factors solved from the diffraction pattern and the electron microscopy image of the sample. In particular, the amplitudes of the structure factors may be determined based on intensities of diffraction peaks in the multiple diffraction patterns. The phases of the structure factors may be determined based on electron microscopy images and the intensities of the diffraction peaks.

Molecular structure may be determined based on structure factors solved from the diffraction pattern and the electron microscopy image of the sample. In particular, the amplitudes of the structure factors may be determined based on intensities of diffraction peaks in the multiple diffraction patterns. The phases of the structure factors may be determined based on electron microscopy images and the intensities of the diffraction peaks.

Estimating wear on bottom hole assembly (BHA) components utilizes a rock hardness index using analysis of drill cutting. Estimating the amount of wear on borehole assembly components comprises measuring the rock properties in drilled cuttings from a borehole. A hardness value is assigned to each mineral present in the drilled cuttings. A hardness index is calculated for a drilled borehole interval. A wear resistance factor is assigned to each BHA component of the BHA. The wear resistance factor depends on the wear resistance of each BHA component. A wear value for each BHA component is calculated based on the hardness index for the drilled borehole interval, the wear resistance of the BHA component, and drilling parameters.

A protein crystal comprising a first protein crystal having available space in the lattice, wherein a second protein crystal and a moiety can be accommodated in the available space in the lattice. The first and second proteins are co-expressed from one or more nucleic acid constructs. In a preferred embodiment, the first protein is the p21-activated kinase PAK4, the second protein is the PAK4 kinase inhibitor Inka1, and the moiety comprises a reporter molecule such as fluorescent proteins or tags and is fused to the iBox or iBox-C or Inka1. Preferably the crystal is formed in cellulo. Also provided is a fusion protein comprising the first protein and the second protein, wherein upon crystallisation the second protein fits within the available space in the lattice of the first protein, along with the moiety. Methods for producing the protein crystal are also disclosed.

The present invention is a method for measuring a residual stress in a cast and forged steel product, the method using X-rays, including: irradiating a cast and forged steel product with X-rays; two-dimensionally detecting intensities of diffracted X-rays originating from the X-rays; and calculating a residual stress based on a diffraction ring formed by an intensity distribution of the diffracted X-rays detected in the detecting, wherein, when the residual stress is measured for each of a plurality of measurement positions of the cast and forged steel product, the residual stress for each of the measurement positions is calculated in the calculating based on the diffraction ring for each of the measurement positions and an X-ray elastic constant which varies for each of the measurement positions.

A system for X-ray topography, the system includes a source assembly, a detector assembly, a filter and a processor. The source assembly is configured to direct at least an X-ray beam to impinge, at an angle, on a first surface of a sample, the X-ray beam is divergent when impinging on the first surface. The detector assembly is configured to detect the X-ray beam that had entered the sample at the first surface, diffracted while passing through the sample and exited the sample at a second surface that is opposite to the first surface, and to produce an electrical signal in response to the detected X-ray beam. The filter is mounted between the source assembly and the first surface, and is configured to attenuate an intensity of a selected spectral portion of the X-ray beam. The processor is configured to detect one or more defects in the sample based on the electrical signal.

A system for X-ray topography, the system includes a source assembly, a detector assembly, a filter and a processor. The source assembly is configured to direct at least an X-ray beam to impinge, at an angle, on a first surface of a sample, the X-ray beam is divergent when impinging on the first surface. The detector assembly is configured to detect the X-ray beam that had entered the sample at the first surface, diffracted while passing through the sample and exited the sample at a second surface that is opposite to the first surface, and to produce an electrical signal in response to the detected X-ray beam. The filter is mounted between the source assembly and the first surface, and is configured to attenuate an intensity of a selected spectral portion of the X-ray beam. The processor is configured to detect one or more defects in the sample based on the electrical signal.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.