A detector includes a set of sensing elements, first section circuitry communicatively coupling a first set of sensing elements to an input of first signal processing circuitry, second section circuitry communicatively coupling a second set of sensing elements to an input of second signal processing circuitry, and interconnection circuitry communicatively coupling an output of the first signal processing circuitry to an output of the second signal processing circuitry. The interconnection circuitry may include an interconnection layer having interconnection switching elements communicatively coupled to outputs of analog signal paths of the detector. Interconnection switching elements may communicatively couple the outputs of adjacent analog signal paths. The detector may also include signal processing circuitry that includes a plurality of converters. The interconnection circuitry may be configured to selectively couple outputs of the first and second signal processing circuitry to the converters.

The purpose of the present invention is to provide a pattern measurement device for quantitatively evaluating a pattern formed using a directed self-assembly (DSA) method with high accuracy. The present invention is a pattern measurement device for measuring distances between patterns formed in a sample, wherein the centroids of a plurality of patterns included in an image are determined; the inter-centroid distances, and the like, of the plurality of centroids are determined; and on the basis of the inter-centroid distances, and the like, of the plurality of centroids, a pattern meeting a specific condition is distinguished from patterns different from the pattern meeting the specific condition or information is calculated about the number of the patterns meeting the specific condition, the size of an area including the patterns meeting the specific condition, and the number of imaginary lines between the patterns meeting the specific condition.

Quantitative X-ray analysis is carried out by making X-ray fluorescence measurements to determine the elemental composition of a sample and a correction measurement by measuring the transmitted intensity of X-rays at an energy E transmitted directly through the sample without deviation. An X-ray diffraction measurement is made in transmission by directing X-rays from an X-ray source at the energy E onto a sample at an incident angle ψ.sub.1 to the surface of the sample and measuring a measured intensity I.sub.d(θ.sub.fl) of the diffracted X-rays at the energy E with an X-ray detector at an exit angle ψ.sub.2 corresponding to an X-ray diffraction peak of a predetermined component. A matrix corrected X-ray intensity is obtained using the measured X-ray intensity in the X-ray diffraction measurement, the correction measurement and the mass attenuation coefficient of the sample calculated from the elemental composition and the mass attenuation coefficients of the elements.

A correlative evaluation of a sample (104) using a combined x-ray computed tomography (CT) and x-ray fluorescence (XRF) system and the method for analyzing a sample (104) using x-ray CT and XRF is disclosed. The CT/XRF system (10) includes an x-ray CT subsystem (100) for acquisition of volume information and a confocal XRF subsystem (102) for characterization of elemental composition information. Geometrical calibration is carried out between the XRF subsystem (102) and the X-ray CT subsystem (100) such that a region of interest defined during X-ray CT acquisition can be retrieved by the XRF subsystem (102) for a subsequent XRF acquisition. The system (10) combines the sub-micrometer spatial resolution 3-D imaging capability of x-ray CT with the elemental composition analysis of confocal XRF to provide 3-D elemental composition analysis of a sample (104) with ppm level sensitivity. This is applicable to many scientific research and industrial applications, a prime example of which is the elemental identification of precious metal grains in crushed and ground ores and floatation tailings in the mining industry.

An X-ray thin film inspection device of the present invention includes an X-ray irradiation unit 40 installed on a first rotation arm 32, an X-ray detector 50 installed on a second rotation arm 33, and a fluorescence X-ray detector 60 for detecting fluorescence X-rays generated from an inspection target upon irradiation of X-rays. The X-ray irradiation unit 40 includes an X-ray optical element 43 comprising a confocal mirror for receiving X-rays radiated from an X-ray tube 42, reflects plural focused X-ray beams monochromatized at a specific wavelength and focuses the plural focused X-ray beams to a preset focal point, and a slit mechanism 46 for passing therethrough any number of focused X-ray beams out of the plural focused X-ray beams reflected from the X-ray optical element 43.

A fluorescence mode x-ray absorption spectroscopy apparatus includes an electron bombardment source of x-rays, a crystal analyzer, the source and the crystal analyzer defining a Rowland circle having a Rowland circle radius (R), a detector, and at least one stage configured to position a sample such that at least a portion of the sample is between the crystal analyzer and the detector.

A method for characterizing a sample combining an X-ray tomography characterization technique and a secondary ionization mass spectrometry characterization technique, includes: a step of providing a tip that includes first and second end surfaces, a first cylindrical region bearing the first end surface and a second region in contact with the first cylindrical region and becoming slimmer towards the second end surface; a step of machining the second region to obtain a sample holder including a flat surface, the flat surface forming an end surface of the sample holder, the area of the flat surface being less than the area of the first end surface; a step of placing the sample on the flat surface of the sample holder; a first step of characterization of the sample using an X-ray characterization technique; a second step of characterization of the sample using a secondary ionization mass spectrometry characterization technique.

A valence of a target element of a sample and crystallinity of a sample can be detected with a small device. The analysis device 100 includes: a placement holder 110 for placing a sample S; an X-ray source 11 for irradiating the sample S with X-rays; a first detector 141 for detecting characteristic X-rays generated from the sample S by the irradiation of the X-rays; a second detector 142 for detecting X-rays diffracted by the sample; and a signal processing device 20. The signal processing device 20 detects the valence of the target element of the sample based on the characteristic X-rays detected by the first detector 141, and detects the crystallographic data of the sample based on the X-rays detected by the second detector 142.

Method for determining properties of a sample and a charged particle system for implementing the method are disclosed. The method includes providing at least one image of the sample based on first emissions from a plurality of first scan locations; determining at least one or a plurality of second scan location(s) for at least one or a plurality of region(s) of the at least one image; detecting second emissions from at least one of the second scan locations of at least one of the regions; and adjusting a second dwell period with respect to an average segmentation dwell period.

A scanning microscope system configured for material analysis and mineralogy comprising a first detector and a second detector, and a data-processing system comprising a data-storage component and a segmentation component. The data-storage component is configured for providing image(s) of a sample based on first emissions from a plurality of first scan locations. The segmentation component is configured for determining at least one or a plurality of second scan locations for at least one or a plurality of region(s) of the at least one image. The second detector is configured for detecting second emissions from at least one of the second scan locations of at least one of the regions. The system is further configured for determining the second scan location(s) for the region(s) and detecting the second emissions from the at least one of the second scan locations of the at least one of the regions in parallel.